Nanoelec Group USAL

Journals published on 2012.

8. Analysis of nonharmonic oscillations in Schottky diodes

- D. Pardo, J. Grajal, S. Pérez, T. González and J. Mateos
- Journal of Applied Physics 112, 053703 [1-9] (2012)

7. Plasma enhanced terahertz rectification and noise in InGaAs HEMTs

- J. Mateos and T. González
- IEEE Transactions on Terahertz Science and Technology 2, 562-569 (2012)

6. Effect of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors

- V. Kaushal, I. Íñiguez-de-la-Torre, T. González, J. Mateos, B. Lee, V. Misra, and M. Margala
- IEEE Electron Device Letters 33, 1120-1122 (2012)

5. RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

- M. J. Martín, E. Pascual and R. Rengel
- Solid-State Electronics 73, 64–73 (2012)

4. Searching for THz Gunn oscillations in GaN planar nanodiodes

- A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangaré, G. Ducournau, and C. Gaquière
- Journal of Applied Physics 11, 113705 [1-9] (2012)

3. Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Semiconductor Science and Technology 27, 065018 [1-5] (2012)

2. Monte Carlo studies of the intrinsic time-domain response ofnanoscale three-branch junctions

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, T. González, H. Irie, and Roman Sobolewski
- Journal of Applied Physics 111, 084511 [1-4] and Virtual Journal of Nanoscale Science & Technology 25 [20] (2012)

1. Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 27, 015008 [1-6] (2012)

JOURNALS

Journals published on 2012.