Nanoelec Group USAL

6. Monte Carlo analysis of the behavior and spatial origin electronic noise in GaAs MESFETs

- T. González, D. Pardo, L. Varani, and L. Reggiani
- IEEE Transactions on Electron Devices 42, 991-997 (1995)

5. Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFETs

- T. González and D. Pardo
- IEEE Transactions on Electron Devices 42, 605-611 (1995)

4. High frequency noise spectra in semiconductor materials and devices

- L. Reggiani, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Lithuanian Journal of Physics 35, 395-403 (1995)

3. Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures

- J. Mateos, T. González and D. Pardo
- Applied Physics Letters 67, 685-687 (1995)

2. Theory of electronic noise in semiconductor materials and devices.

- L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
- Il Vuoto, Scienza e Tecnologia 24, 64-68 (1995)

1. Spatial extent of the correlation between local diffusion noise sources in GaAs

- J. Mateos, T. González and D. Pardo
- Journal of Applied Physics 77, 1564-1568 (1995)

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