NANELEC

JOURNALS

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Journals published on 2023.

10. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, P. Artillan, H. Sánchez-Martín, S. García-Sánchez, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques (2023)

9. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

- I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, and J. Mateos
- Applied Physics Letters 123, 123503 (2023)

8. Low temperature memory effects in AlGaN/GaN nanochannels

- H. Sánchez-Martín, E. Pérez-Martín, G. Paz-Martínez, J. Mateos, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 123, 103505 (2023)

7. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

- E. Pérez-Martín, H. Sánchez-Martín, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 34, 325201 (2023)

6. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

- S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 3447 (2023)

5. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

- S. García-Sánchez, R. Rengel, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 2981 (2023)

4. Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

- R. Paul, V. Conti, M. Zamani, S. Escobar-Steinvall, H. Sánchez-Martín, C. Gastaldi, M. A. Ionescu, I. Íñiguez-de-la-Torre, M. Dimitrievska, A. Fontcuberta, and V. Piazza
- Solar Energy Materials and Solar Cells 252, 112194 (2023)

3. Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: Degeneracy and screening

- J. M. Iglesias, A. Nardone, R. Rengel, K. Kalna, M. J. Martín, and E. Pascual
- 2D Materials 14, 025011 (2023)

2. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

- T. Gonzalez, B. Orfao, S. Pérez, J. Mateos, and B. G. Vasallo
- Applied Physics Express 16, 024003 (2023)

1. Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques 71, 3126 (2023)


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