Nanoelec Group USAL

Journals published on all.

272. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

- I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, and J. Mateos
- Applied Physics Letters 123, 123503 (2023)

271. Low temperature memory effects in AlGaN/GaN nanochannels

- H. Sánchez-Martín, E. Pérez-Martín, G. Paz-Martínez, J. Mateos, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 123, 103505 (2023)

270. A closed-form expression for the frequency dependent microwave responsivity of transistors based on the I-V curve and S-parameters

- G. Paz-Martínez, P. Artillan, J. Mateos, E. Rochefeuille, T. González, and I. Íñiguez-de-la-Torre
- IEEE Transactions on Microwave Theory and Techniques (2023)

269. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

- E. Pérez-Martín, H. Sánchez-Martín, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 34, 325201 (2023)

268. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

- S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 3447 (2023)

267. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

- S. García-Sánchez, R. Rengel, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 2981 (2023)

266. Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

- R. Paul, V. Conti, M. Zamani, S. Escobar-Steinvall, H. Sánchez-Martín, C. Gastaldi, M. A. Ionescu, I. Íñiguez-de-la-Torre, M. Dimitrievska, A. Fontcuberta, and V. Piazza
- Solar Energy Materials and Solar Cells 252, 112194 (2023)

265. Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: Degeneracy and screening

- J. M. Iglesias, A. Nardone, R. Rengel, K. Kalna, M. J. Martín, and E. Pascual
- 2D Materials 14, 025011 (2023)

264. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

- T. Gonzalez, B. Orfao, S. Pérez, J. Mateos, and B. G. Vasallo
- Applied Physics Express 16, 024003 (2023)

263. Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques 71, 3126 (2023)

262. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

- G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, and J. Mateos
- Journal of Applied Physics 132, 134501 (2022)

261. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

- B. Orfao, G. Di Gioia, B. G. Vasallo, S. Pérez, J. Mateos, Y. Roelens, E. Frayssinet, Y. Cordier, M. Zaknoune, and T. González
- Journal of Applied Physics 132, 044502 (2022)

260. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

- H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
- Solid-State Electronics 193, 108289 (2022)

259. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos and T. González
- Sensors 22, 1515 (2022)

258. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 69, 514 (2022)

257. High-order harmonic generation in 2D transition metal disulphides

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Applied Physics Letters 119, 012101 (2021)

256. Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence

- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Materials 14, 5108 (2021)

255. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

- E. Pérez-Martín, I. Íñiguez-de-la-Torre, C. Gaquière, T. González, and J. Mateos
- Journal of Applied Physics 10, 104501 (2021)

254. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

- B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
- IEEE Transactions on Electron Devices 68, 4296 (2021)

253. Temperature behavior of Gunn oscillations in planar InGaAs diodes

- J. A. Novoa-López, G. Paz-Martínez, H. Sánchez-Martín, Y. Lechaux, I. Íñiguez-de-la-Torre, T. González, and J. Mateos
- IEEE Electron Device Letters 42, 1136 (2021)

252. Influence of laser modulation frequency on the performance of terahertz photoconductive switches on semi-insulating GaAs exhibiting negative differential conductance

- G. Paz-Martinez, C. G. Treviño-Palacios, J. Molina-Reyes, A. Romero-Morán, E. Cervantes-García, J. Mateos, and T. González
- IEEE Transactions on Terahertz Science and Technology 11, 591 (2021)

251. Non-linear thermal resistance model for the simulation of high power GaN-based devices

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
- Semiconductor Science and Technology 36, 055002 (2021)

250. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

- E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
- Microelectronics Reliability 114, 113806 (2020)

249. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

- Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
- Smiconductor Science and Technology 35, 115009 (2020)

248. Noise and charge discreteness as ultimate limit for the T Hz operation of ultra‑small electronic devices

- E. Colomés, J. Mateos, T. González, and X. O riols
- Scientific Reports 10, 15990 (2020)

247. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
- IEEE Transactions on Electron Devices 9, 3530 (2020)

246. Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides

- R. Rengel, O. Castelló, E. Pascual, M. J. Martín, and J. M. Iglesias
- Journal of Physics D: Applied Physics 59, 395102 (2020)

245. Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Physica E: Low-dimensional Systems and Nanostructures 123, 114211 (2020)

244. Electronic transport and noise characterization in MoS2

- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 35, 055021 (2020)

243. Interplay between channel and shot noise at the onset of spiking activity in neural membranes

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 19, 792 (2020)

242. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

- E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 31, 405204 (2020)

241. Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

- R. Rengel, E. Pascual, I. Íñiguez-de-la-Torre, M. J. Martín, and B. G. Vasallo
- Journal of Science Education and Technology 28, 445 (2019)

240. Interband scattering-induced ambipolar transport in graphene

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 34, 065011 (2019)

239. Radio frequency performance projection and stability tradeoff of h-BN encapsulated graphene field-effect transistors

- P. C. Feijoo, F. Pasadas, J. M. Iglesias, R. Rengel, and David Jiménez
- IEEE Transactions on Electron Devices 66, 1567 (2019)

238. Monte Carlo investigation of noise and high-order harmonic extraction in graphene

- J. M. Iglesias, E. M. Hamham, E. Pascual, and R. Rengel
- Semiconductor Science and Technology 33, 124012 (2018)

237. Impact of the hot phonon effect on electronic transport in monolayer silicene

- E. M. Hamham, J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Journal of Physics D: Applied Physics 51, 415102 (2018)

236. Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport

- R. Rengel, J. M. Iglesias, E. M. Hamham, and M. J. Martín
- Semiconductor Science and Technology 33, 065011 (2018)

235. Ion shot noise in Hodgkin–Huxley neurons

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 17, 1790 (2018)

234. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

- H. Sánchez-Martín, S. Sánchez-Martín, I. Íñiguez-de-la-Torre , S. Pérez, J. A. Novoa , G. Ducournau, B. Grimbert, C. Gaquière, T. González and J. Mateos
- Semiconductor Science and Technology 33, 095016 (2018)

233. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

- H. Sánchez-Martín, J. Mateos, J. A. Novoa, J. A. Delgado-Notario, Y. M. Meziani, S. Pérez, H. Theveneau, G. Ducournau, C. Gaquière, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 113, 043504 (2018)

232. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

- B. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos
- Journal of Applied Physics 123, 034501 [1-5] (2018)

231. Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Surface Science 424, 52-57 (2017)

230. Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene

- J. M. Iglesias, R. Rengel, Hamham E. M., E. Pascual and M. J. Martín
- Journal of Physics D: Applied Physics 50, 305101 (2017)

229. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

- P. C. Feijoo, F. Pasadas, J. M. Iglesias, M. J. Martín, R. Rengel, C. Li, W. Kim, J. Riikonen, H. Lipsanen and D. Jiménez
- Nanotechnology 28, 485203 (2017)

228. A balance equations approach for the study of the dynamic response and electronic noise in graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Applied Physics 121, 185705 (2017)

227. Stochastic model for action potential simulation including ion shot noise

- B. G. Vasallo, F. Galán-Prado, J. Mateos, T. González, S. Hedayat, V. Hoel, and A. Cappy
- Journal of Computational Electronics 16, 419-430 (2017)

226. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

- H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Semiconductor Science and Technology 32, 035011 [1-8] (2017)

225. Noise temperature in graphene at high frequencies

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Semiconductor Science and Technology 31, 075001 [1-6] (2016)

224. Spectral density of velocity fluctuations under switching field conditions in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Statistical Mechanics: Theory and Experiment 2016, 054018 [1 8] (2016)

223. Design and analysis of high performance ballistic nanodevice-based sequential circuits using Monte Carlo and Verilog AMS simulations

- P. Marthi, N. Hossain, H. Wang, J.-F. Millithaler, M. Margala, I. Iñiguez-de-la-Torre, J. Mateos, and T. González
- IEEE Transactions on Circuits and Systems I: Regular Papers 63, 2236-2244 (2016)

222. Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes

- D. Moro-Melgar, A. Maestrini, J. Treuttel, L. Gatilova, T. González, B. G. Vasallo, and J. Mateos
- IEEE Transactions on Electron Devices 63, 3900-3907 (2016)

221. Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
- Semiconductor Science and Technology 31, 065005 [1-9] (2016)

220. Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Physics Letters 108, 043105 (2016)

219. A 520-620 GHz Schottky receiver front-end for Planetary Science and Remote Sensing with 1070K-1500K DSB noise temperature at Room Temperature

- J. Treuttel, L. Gatilova, A. Maestrini, D. Moro-Melgar, F. Yang, F. Tamazouzt, T. Vacelet, Y. Jin, A. Cavanna, J. Mateos, A. Feret, C. Chaumont, and C. Goldstein
- IEEE Transactions on Terahertz Science and Technology 6, 148-155 (2016)

218. Electrical and noise modelling of GaAs Schottky diode mixers in the THz band

- D. Pardo, J. Grajal, and S. Pérez
- IEEE Transactions on Terahertz Science and Technology 6, 69-82 (2016)

217. Room temperature direct and heterodyne detection of 0.28 to 0.69 THz waves based on GaN 2DEG unipolar nanochannels

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González.
- IEEE Transactions on Electron Devices 63, 353- 359 (2016)

216. Fabrication and characterization of fully transparent ZnO thin-film transistors and self-switching nano-diodes

- Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Íñiguez-de-la-Torre, and T. González
- Journal of Physics: Conference Series 647, 012068 [1-4] (2015)

215. Optimization of ballistic deflection transistors by Monte Carlo simulations

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Journal of Physics: Conference Series 647, 012066 [1-4] (2015)

214. Improvement of interfacial and electrical properties of Al2O3/ n‑Ga0.47In0.53As for III-V impact ionization MOSFETs

- Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T. González, B. G. Vasallo, and N. Wichmann
- Journal of Physics: Conference Series 647, 012062 [1-4] (2015)

213. Shot-noise suppression effects in InGaAs planar diodes at room temperature

- Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- Journal of Physics: Conference Series 647, 012061 [1-4] (2015)

212. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

- V. Talbo, J. Mateos, T. González, Y. Lechaux, N. Wichmann, S. Bollaert and B. G. Vasallo
- Journal of Physics: Conference Series 647, 012056 [1-4] (2015)

211. Effect of charged impurity scattering on the electron diffusivity and mobility in graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Physics: Conference Series 647, 012046 [1-4] (2015)

210. Temperature and surface traps influence on the THz emission from InGaAs diodes

- A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
- Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

209. Nonequilibrium transport in GaAs Schottky mixers at 2.5 THz

- D Pardo, J Grajal, and S Pérez
- Journal of Physics: Conference Series 647, 012038 [1-4] (2015)

208. Ultra-high responsivity of optically-active semiconducting asymmetric nano-channel diodes

- Y. Akbas, A. Stern, L. Q. Zhang, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, J. Mateos, T. González, G. Wicks, and R. Sobolewski
- Journal of Physics: Conference Series 647, 012013 [1-4] (2015)

207. 0.69 THz room temperature terahertz heterodyne detection using unipolar nanodiodes

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González
- Journal of Physics: Conference Series 647, 012006 (2015)

206. Carrier-carrier and carrier-phonon interactions in the dynamics of photoexcited electrons in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Physics: Conference Series 647, 012003 (2015)

205. Review of electron transport properties in bul InGaAs and InAs at room temperature

- S. Karishy, P. Ziadé, G. Sabatini, H. Marinchio, C. Palermo, L. Varani, J. Mateos, and T. Gonzalez
- Lithuanian Journal of Physics 55, 305-314 (2015)

204. Study of surface charges in ballistic deflection transistors

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Nanotechnology 26, 485202 [1-6] (2015)

203. Time-dependent shot noise in multi-level quantum dot-based single-electron devices

- V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
- Semiconductor Science and Technology 30, 055002 [1-7] (2015)

202. Phonon balck-body radiation limit for heat dissipation in electronics

- J. Schleeh, J. Mateos, I. Íñiguez-de-la-Torre, N. Wadefalk, P. A. Nilsson, J. Grahn and A. J. Minnich
- Nature Materials 14, 187-192 (2015) (2015)

201. Monte Carlo modelling of noise in advanced III-V HEMTs

- J. Mateos, H. Rodilla, B. G. Vasallo and T. González
- Journal of Computational Electronics 14, 72-86 (2015)

200. Introduction to special issue on noise modelling

- T. González
- Journal of Computational Electronics 14, 1-3 (2015)

199. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

- A. Westlund, P. Sangaré, G. Ducournau, I. Iñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
- Solid-State Electronics 104, 79-85 (2015)

198. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

- S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
- Semiconductor Science and Technology 30, 035001 [1-8] (2015)

197. An assessment of available models for the design of Schottky-based multipliers up to THz frequencies

- D. Pardo, J. Grajal, C. G. Pérez-Moreno, and S. Pérez
- IEEE Transactions on Terahertz Science and Technology 4, 277-286 (2014)

196. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs HEMTs

- D. Moro-Melgar, J. Mateos, T. González and B. G. Vasallo
- Journal of Applied Physics 116, 234502 [1-7] (2014)

195. Operation of GaN planar nanodiodes as THz detectors and mixers

- I. Iñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos
- IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)

194. Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos
- Semiconductor Science and Technology 29, 115032 [1-9] (2014)

193. Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

- O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- Applied Physics Letters 105, 113502 [1-4] (2014)

192. On the effect of d-doping in self-switching diodes

- A. Westlund, I. Iñiguez-de-la-Torre, P. A. Nilsson, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière, L. Desplanque, X. Wallart, and J. Grahn
- Applied Physics Letters 105, 093505 [1-5] (2014)

191. Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

- J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos
- Applied Physics Letters 104, 073509 [1-4] (2014)

190. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

189. Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

- M. J. Martín, C. Couso, E. Pascual and R. Rengel
- IEEE Transactions on Electron Devices 99, 3955 (2014)

188. Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons

- R. Rengel, E. Pascual and M. J. Martín
- Applied Physics Letters 104, 233107 (2014)

187. Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime

- R. Rengel and M. J. Martín
- International Journal of Numerical Modelling 27, 792 (2014)

186. Nonlinear nanochannels for room temperature terahertz heterodyne detection

- J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangaré, B. Grimbert, M. Faucher, G. Ducournau, C. Gaquière, I. Iñiguez-de-la-Torre, J. Mateos and T. Gonzalez
- Semiconductor Science and Technology 28, 125024 [1-6] (2013)

185. Cryogenic performance of low-noise InP HEMTs: A Monte Carlo study

- H. Rodilla, J. Schleeh, P. A. Nilsson,N. Wadefalk, J. Mateos, and J. Grahn
- IEEE Transactions on Electron Devices 60, 1625-1631 (2013)

184. Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length

- S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- Journal of Applied Physics 114, 074503 [1-9] (2013)

183. Experimental demonstration of direct terahertz detection at room temperature in AlGaN/GaN asymmetric nanochannels

- P. Sangaré, G. Ducournau, B. Grimbert, V. Brandli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
- Journal of Applied Physics 113, 034305 [1-6] (2013)

182. Diffusion coefficient, correlation function and power spectral density of velocity fluctuations in monolayer graphene

- R. Rengel, and M. J. Martín
- Journal of Applied Physics 114, 143702 (2013)

181. Analysis of nonharmonic oscillations in Schottky diodes

- D. Pardo, J. Grajal, S. Pérez, T. González and J. Mateos
- Journal of Applied Physics 112, 053703 [1-9] (2012)

180. Plasma enhanced terahertz rectification and noise in InGaAs HEMTs

- J. Mateos and T. González
- IEEE Transactions on Terahertz Science and Technology 2, 562-569 (2012)

179. Effect of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors

- V. Kaushal, I. Íñiguez-de-la-Torre, T. González, J. Mateos, B. Lee, V. Misra, and M. Margala
- IEEE Electron Device Letters 33, 1120-1122 (2012)

178. RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

- M. J. Martín, E. Pascual and R. Rengel
- Solid-State Electronics 73, 64–73 (2012)

177. Searching for THz Gunn oscillations in GaN planar nanodiodes

- A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangaré, G. Ducournau, and C. Gaquière
- Journal of Applied Physics 11, 113705 [1-9] (2012)

176. Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Semiconductor Science and Technology 27, 065018 [1-5] (2012)

175. Monte Carlo studies of the intrinsic time-domain response ofnanoscale three-branch junctions

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, T. González, H. Irie, and Roman Sobolewski
- Journal of Applied Physics 111, 084511 [1-4] and Virtual Journal of Nanoscale Science & Technology 25 [20] (2012)

174. Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 27, 015008 [1-6] (2012)

173. Exploring digital logic design using nano-devices through Monte Carlo simulations

- I. Íñiguez-de-la-Torre, S. Purohit, V. Kaushal, M. Margala, M. Gong, R. Sobolewski, D. Wolpert, P. Ampadu, T. González, and J. Mateos
- IEEE Transactions on Nanotechnology 10, 1337-1346 (2011)

172. Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

- I. Íñiguez-de-la-Torre, J. Mateos, Y. Roelens, C. Gardès, S. Bollaert and T. González
- Nanotechnology 22, 445203 [1-5] (2011)

171. Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study

- A. Iñiguez-de-la-Torre, I. Iñiguez-de-la-Torre, J. Mateos and T. González
- Applied Physics Letters 99, 062109 [1-3] and Virtual Journal of Nanoscale Science & Technology 24 [8] (2011)

170. Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

- D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González
- Semiconductor Science and Technology 26, 055023 [1-11] (2011)

169. Monte Carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, E. Lefebvre, G. Moschetti, J. Grahn, and J. Mateos
- Acta Physica Polonica A 119, 222-224 (2011)

168. Monte Carlo analysis of the dynamic behavior of InAlAs/InGaAs velocity modulation transistors: a geometrical optimization

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Acta Physica Polonica A 119, 193-195 (2011)

167. Submillimeter-wave oscillations in recessed InGaAs/InAlAs heterostructures: origin and tuneability

- S. Pérez, J. Mateos, and T. González
- Acta Physica Polonica A 119, 111-113 (2011)

166. Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

- V. Kaushal, I. Iñiguez-de-la-Torre and M. Margala
- Solid-State Electronics 56, 120-129 (2011)

165. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 26, 025004 [1-7] (2011)

164. Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors

- J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González and S. Pérez
- Solid-State Electronics 56, 116-119 (2011)

163. Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

- R. Rengel, M. J. Martín and F. Danneville,
- IEEE Electron Device Letters 32, 72-74 (2011)

162. Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Journal of Applied Physics 108, 094505 [1-5] (2010)

161. Three-Terminal Junctions operating as mixers, frequency doublers and detectors. A broad-band frequency numerical and experimental study at room temperature

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Semiconductor Science and Technology 25, 125013 [1-14] (2010)

160. Monte Carlo study of the static and dynamic performance of a 100 nm-gate InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 57, 2572-2578 (2010)

159. Electronic transport in Laterally Asymmetric Channel MOSFET for RF analog applications

- R. Rengel and M. J. Martín
- IEEE Transactions on Electron Devices 57, 2448-2454 (2010)

158. A generalized drift-diffusion model for rectifying Schottky contact simulation

- F. L. Traversa, F. Bertazzi, F. Bonani, S. Donati, G. Ghione, S. Pérez, J. Mateos and T. González
- IEEE Transactions on Electron Devices 57, 1539-1547 (2010)

157. A study of geometry effects on the performance of ballistic deflection transistor

- V. Kaushal, I. Iñiguez-de-la-Torre, H. Irie, G. Guarino, W. R. Donaldson, P. Ampadu, R. Sobolewski and M. Margala
- IEEE Transactions on Nanotechnology 9, 723-733 (2010)

156. Enhanced Terahertz detection in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González and A. M. Song
- International Journal of Numerical Modeling 23, 301-314 (2010)

155. Terahertz current oscillation assisted by optical phonon emission in Gan n+nn+ diodes: Monte Carlo simulations

- A. Iñiguez-de-la-Torre, J. Mateos and T. González
- Journal of Applied Physics 107, 053707 [1-6] (2010)

154. Plasmonic noise in Si and InGaAs semiconductor nanolayers

- J. Pousset, J.-F. Millithaler, L. Reggiani, G. Sabatini, C. Palermo, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, A. Bournel and P. Dollfus
- Journal of Physics: Conference Series 193, 012091 [1-4] (2009)

153. On the geometrical tunabililty of THz Gunn-like oscillations in InGaAs/InAlAs slot-diodes

- S. Pérez, J. Mateos, D. Pardo and T. González
- Journal of Physics: Conference Series 193, 012090 [1-4] (2009)

152. Terahertz tuneable detection in Self-Switching Diodes based on high mobility semiconductors: InGaAs, InAs and InSb

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Journal of Physics: Conference Series 193, 012082 [1-4] (2009)

151. Monte Carlo simulation of ballistic transport in high-mobility channels

- G. Sabatini, H. Marinchio, C. Palermo, L. Varani, T. Daoud, R. Teissier, H. Rodilla, T. González, and J. Mateos
- Journal of Physics: Conference Series 193, 012035 [1-4] (2009)

150. Current oscillations excited by optical phonon emission in GaN n+nn+ diodes: Monte Carlo simulations

- A. Iñiguez-de-la Torre, T. González and J. Mateos
- Journal of Physics: Conference Series 193, 012023 [1-4] (2009)

149. RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Journal of Physics: Conference Series 193, 012021 [1-4] (2009)

148. Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes

- T. González, I. Iñiguez-de-la Torre, D. Pardo, J. Mateos and A. M. Song
- Journal of Physics: Conference Series 193, 012018 [1-4] (2009)

147. Monte Carlo investigation of TeraHertz plasma oscillations in gated ultrathin channel of n-InGaAs

- J. F. Millithaler, J. Pousset, L. Reggiani, P. Ziade, H. Marinchio, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Applied Physics Letters 95, 152102 [1-3] (2009)

146. High-mobility heterostructures based on InAs and InSb: A Monte Carlo study

- H. Rodilla, T. González, D. Pardo, and J. Mateos
- Journal of Applied Physics 105, 113705 [1-6] (2009)

145. Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens , S. Bollaert and J. Mateos
- Journal of Applied Physics 105, 094504 [1-7] and Virtual Journal of Nanoscale Science & Technology 19 [20] (2009)

144. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

- N. Wichmann, B. G. Vasallo, S. Boolaert, Y. Roelens, X. Wallart, A. Cappy, T. González, D. Pardo and J. Mateos
- Applied Physics Letters 94, 103504 [1-3] (2009)

143. Plasmonic noise in nanometric semiconductor layers

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: Theory and Experiment 2009, P02030 [1-12] (2009)

142. Noise and terahertz rectification linked by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la Torre, J. Mateos, D. Pardo, A. M. Song and T. González
- Applied Physics Letters 94, 093512 [1-3] (2009)

141. A Monte Carlo investigation of plasmonic noise in nanometric InGaAs channels

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: theory and experiment 2009, P01040 [1-12] (2009)

140. Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research

- E. Pascual , M. J. Martín , R. Rengel, G. Larrieu and E. Dubois
- Semiconductor Science and Technology 24, 025022 [1-6] (2009)

139. TeraHertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels

- J. F. Millithaler, L. Reggiani, J. Pousset, G. Sabatini, L. Varani, C. Palermo, J.Mateos, T. González, S. Pérez and D. Pardo
- Journal of Physics: Condensed Matter 20, 384210 [1-7] (2008)

138. Comparison between the noise performance of double- and single-gate InP-based HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 55, 1535-1540 (2008)

137. Ballistic nanodevices for high-frequency applications

- C. Gardes, Y. Roelens, S. Bollaert, A. Cappy, J.S. Galloo, X. Wallart, C. Gaquiere, A. Curutchet, J. Mateos, T. González, B.G. Vasallo, L. Bednarz, and I. Huynen
- International Journal of Nanotechnology 5, 796-808 (2008)

136. THz Gunn-like oscillations in InGaAs/InAlAs planar diodes

- S. Pérez, T. González, D. Pardo and J. Mateos
- Journal of Applied Physics 103, 094516 [1-5] and Virtual Journal of Ultrafast Science 7 [6] (2008)

135. Monte Carlo investigation of THz plasma oscillations in ultra-thin layers of n‑type InGaAs

- J. F. Millithaler, L. Reggiani, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez and D. Pardo
- Applied Physics Letters 92, 042113 [1-3] (2008)

134. Monte Carlo analysis of noise spectra in self-switching nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 103, 024502 [1-6] and Virtual Journal of Nanoscale Science & Technology 17 [5] (2008)

133. Monte Carlo simulation of plasma oscillations in ultra-thin layers

- J. F. Millithaler, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez, D. Pardo and L. Reggiani
- Physica Status Solidi (c) 5, 249-252 (2008)

132. Excitation of millimeter-wave oscillations in InAlAs/InGaAs heterostructures

- S. Pérez, J. Mateos, D. Pardo and T. González
- Physica Status Solidi (c) 5, 146-149 (2008)

131. Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: A Monte Carlo study

- M. J. Martín, R. Rengel, E. Pascual, J. £usakowski, W. Knap and T. González
- Physica Status Solidi (c) 5, 123-126 (2008)

130. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

- E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M. J. Martín
- Physica Status Solidi (c) 5, 119-122 (2008)

129. Monte Carlo simulation of surface charge effects in T-branch nanojunctions

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens and A. Cappy
- Physica Status Solidi (c) 5, 94-97 (2008)

128. Monte Carlo analysis of memory effects in nano-scale rectifying diodes

- I. Iñiguez-de-la-Torre, T. González, D. Pardo and J. Mateos
- Physica Status Solidi (c) 5, 82-85 (2008)

127. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 54, 2815-2822 (2007)

126. Hysteresis phenomena in nano-scale rectifying diodes. A Monte Carlo interpretation in terms of surface effects

- I. Íñiguez de la Torre, T. González, D. Pardo and J. Mateos
- Applied Physics Letters 91, 063504 and Virtual Journal of Nanoscale Science & Technology 16 [8] (2007)

125. Ballistic nanodevices. A new concept in electronic design

- Y. Roelens, J. Mateos, S. Bollaert, J. S. Galloo, B. G. Vasallo, D. Pardo and T. González
- Revue E tijdschrift 123, 34-39 (2007)

124. Quasi ballistic transport in nanometer Si metal-oxide-semiconductor field-effect transitors: experimental and Monte Carlo analysis

- J. Lusakowski, M. J. Martín, R. Rengel, T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf and T. Skotnicki
- Journal of Applied Physics 101, 114511 and Virtual Journal of Nanoscale Science & Technology 15 [25] (2007)

123. Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

- E. Pascual, R. Rengel and M. J. Martín
- Semiconductor Science and Technology 22, 1003-1009 (2007)

122. Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

- I. Iñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- Semiconductor Science and Technology 22, 663-670 (2007)

121. Injected Current and Quantum Transmission Coefficient in Low Schottky Barriers: WKB and Airy Approaches

- R. Rengel, E. Pascual and M. J. Martín
- IEEE Electron Device Letters 28, 171-173 (2007)

120. Ballistic nanodevices for high frequency applications

- S. Bollaert, A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart, J. Mateos, T. González, B. G. Vasallo, B. Hackens, L. Bednarz and I. Huynen
- Thin Solid Films 515, 4321-4326 (2007)

119. Negative differential transconductance and nonreciprocal effects in Y-branch nanojunction. High-frequency analysis

- L. Bednarz, Rashmi, P. Simon, I. Huynen, T. González and J. Mateos
- IEEE Transactions on Nanotechnology 5, 750-757 (2006)

118. Numerical modelling of TeraHertz electronic devices

- L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissiere, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Pérez, D. Pardo and T. González
- Journal of Computational Electronics 5, 71-77 (2006)

117. Theoretical investigation of Schottky-barrier diodes noise performance in external resonant circuits

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Semiconductor Science and Technology 21, 550-557 (2006)

116. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

- R. Rengel, T. González, J. Mateos, D. Pardo, G. Dambrine, F. Danneville, J. P. Raskin and M. J. Martín
- IEEE Transactions on Electron Devices 53, 523-532 (2006)

115. A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs

- R. Rengel, M. J. Martín, G. Dambrine and F. Danneville
- Semiconductor Science and Technology 21, 273-278 (2006)

114. Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Semiconductor Science and Technology 20, 956-960 (2005)

113. Microwave detection at 110 GHz by nanowires with broken symmetry

- C. Balocco, A. M. Song, M. Aberg, A. Forchel, T. González, J. Mateos, I. Maximov, M. Missous, A. A. Rezazadeh, J. Saijets, L. Samuelson, D. Wallin, K. Williams, L. Worschech and H. Q. Xu
- Nano Letters 5, 1423-1427 (2005)

112. Operation and high-frequency performance of nanoscale unipolar rectifying diodes

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- Applied Physics Letters 86, 212103 [1-3] (2005)

111. Current noise spectra of Schottky barrier diodes with electron traps in the active layer

- S. Pérez and T. González
- Journal of Applied Physics 97, 073708 [1-7] (2005)

110. Voltage tunable terahertz emission from ballistic nanometer InGaAs/AlInAs transistor

- J. Lusakowski, W.Knap, N. Dyakonova, L. Varani, J. Mateos, T. Gonzalez, T. Parenty, S. Bollaert, A. Cappy and K. Karpierz
- Journal of Applied Physics 97, 064307 [1-7] and Virtual Journal of Nanoscale Science & Technology 11 [11] (2005)

109. Theoretical investigation of large-signal noise in nanometric Schottky-barrier diodes operating in external resonant circuits

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, J. C. Vaissiere, L. Reggiani, S. Pérez and T. González
- Acta Physica Polonica A 107, 396-399 (2005)

108. On the influence of space-quantization effects on the RF noise behavior of DG MOSFETs

- R. Rengel, T. González and M. J. Martín
- Fluctuation and Noise Letters 4, L561-L569 (2004)

107. Design optimization of AlInAs/GaInAs HEMTs for low-noise applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 1228-1233 (2004)

106. Kink-effect related noise in short-channel InAlAs/InGaAs High Electron Mobility Transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 95, 8271-8274 (2004)

105. Non-linear effects in T-branch junctions

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- IEEE Electron Device Letters 25, 235-237 (2004)

104. Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures

- D. Persano Adorno, M. Zarcone, G. Ferrante, P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Physica Satus Solidi (c) 1, 1367-1376 (2004)

103. Design optimization of AlInAs/GaInAs HEMTs for high-frequency applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 521-528 (2004)

102. Quantum transport under high-frequency conditions: application to bound state resonant tunnelling transistors

- X. Oriols, A. Alarcón and J. Mateos
- Semiconductor Science and Technology 19, L69-L73 (2004)

101. Towards the nano-scale: Influence of scaling on the electronic trasport and small signal behaviour of MOSFETs

- R Rengel, D Pardo and M J Martin
- Nanotechnology 15, S276-S282 (2004)

100. Monte Carlo analysis of four-terminal ballistic rectifiers

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Nanotechnology 15, S250-S253 (2004)

99. Noise temperature reduction by doping in ballistic n+-n-n+ nanodiodes

- G Gomila, I R Cantalapiedra, T González and L Reggiani
- Semiconductor Science and Technology 19, S209-211 (2004)

98. 2D ensemble Monte Carlo modelling of bulk and FDSOI MOSFETs: active layer thickness and noise performance

- R Rengel, D Pardo and M J Martín-Martínez
- Semiconductor Science and Technology 19, S199-201 (2004)

97. Dynamical formation of hot-carrier intergroup noise under sub-terahertz cyclostationary conditions

- P Shiktorov, E Starikov, V Gruzinskis, L Reggiani, L V Varani, J C Vaissiere, S Pérez and T González
- Semiconductor Science and Technology 19, S170-S172 (2004)

96. Room temperature nonlinear transport in ballistic nanodevices

- T. Gonzalez, B. G. Vasallo, D. Pardo and J. Mateos
- Semiconductor Science and Technology 19, S125-S127 (2004)

95. A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications

- R Rengel, D Pardo and M J Martín
- Semiconductor Science and Technology 19, 634-643 (2004)

94. Monte Carlo simulation of Schottky diodes operating under TeraHertz cyclostationary conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- IEEE Electron Device Letters 25, 1-3 (2004)

93. Monte Carlo simulation of electronic noise in semiconductor materials and devices operating under cyclostationary conditions

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, S. Pérez and T. González
- Journal of Computational Electronics 2, 455-458 (2003)

92. Monte Carlo study of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 94, 4096-4101 (2003)

91. Microscopic modelling of nonlinear transport in ballistic nanodevices

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- IEEE Transactions on Electron Devices 50, 1897-1905 (2003)

90. The role of energy correlations on Coulomb suppression of shot noise in ballistic conductors

- T. González, J. Mateos, D. Pardo, G. Gomila, I. R. Cantalapiedra and L. Reggiani
- Physical Review B 68, 075309 [1-6] and Virtual Journal of Nanoscale Science & Technology 8 [8] (2003)

89. Monte Carlo simulation of threshold bandwidth for high-order harmonics extraction

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- IEEE Transactions on Electron Devices 50, 1171-1178 (2003)

88. Upconversion of partition noise in semiconductors operating under periodic large-signal conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
- Physical Review B 67, 165201 [1-10] (2003)

87. Ballistic nanodevices for THz data processing: Monte Carlo simulations

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy
- Nanotechnology 14, 117-122 (2003)

86. Upconversion of intergroup hot-carrier noise in semiconductors operating under periodic large-signal conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
- Fluctuation and Noise Letters 3, L51-L61 (2003)

85. Shot-noise anomalies in elastic nondegenerate diffusive semiconductors

- G. Gomila, T. González and L. Reggiani
- Physical Review B 66, 245423 (2002)

84. Numerical and experimental study of a 0.25 µm Fully-Depleted Silicon-on-Insulator MOSFET: static and dynamic RF behaviour

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville, and J.-P. Raskin
- Semiconductor Science and Technology 17, 1149-1156 (2002)

83. Influence of density, occupancy and location of electron traps on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Fluctuation and Noise Letters 2, 243-251 (2002)

82. Semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures: relevance of Pauli and long-range Coulomb interaction

- G. Gomila, I. R. Cantalapiedra, T. González and L. Reggiani
- Physical Review B 66, 075302 (2002)

81. Monte Carlo analysis of voltage noise in submicron semiconductor structures under large-signal regime

- S. Pérez and T. González
- Semiconductor Science and Technology 17, 696-700 (2002)

80. Influence of trapping-detrapping processes on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Semiconductor Science and Technology 17, 440-445 (2002)

79. Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions

- M.J. Martín-Martínez, S. Pérez, D. Pardo and T. González
- Physica B 314, 381-385 (2002)

78. Enhanced shot noise in mesoscopic nondegnerate diffusive semiconductors

- G. Gomila, T. González and L. Reggiani
- Physica B 314, 189-192 (2002)

77. RF noise in a short-channel n-MOSFET: a Monte Carlo study

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Material Science Forum 384-385, 155-158 (2002)

76. Optimization of heterojunction devices for high-frequency and low-noise applications

- J. Mateos
- Materials Science Forum 384-385, 11-18 (2002)

75. Monte Carlo simulation of electronic characteristics in short channel d-doped AlInAs/GaInAs HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
- Microelectronics Reliability 41, 73-77 (2001)

74. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
- VLSI Design 13, 85-90 (2001)

73. Transfer-field methods for electronic noise in submicron semiconductor structures

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- Rivista Nuovo Cimento 24(9), 1-71 (2001)

72. Monte Carlo analysis of dynamic and noise performance of submicron MOSFET at RF and microwave frequencies

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Semiconductor Science and Technology 16, 939-946 (2001)

71. Monte Carlo analysis of the noise behavior in Si BJT’s and SiGe HBT’s at RF frequencies

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Journal of Applied Physics 90, 1582-1588 (2001)

70. High Injection Effects on Noise Characteristics of Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Microelectronics Reliability 41, 847-854 (2001)

69. Monte Carlo analysis of the influence of dc conditions on the upconversion of generation-recombination noise in semiconductors

- S. Pérez, T. González, S. Delage, and J. Obregon
- Semiconductor Science and Technology 16, L8-L11 (2001)

68. An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution

- S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martín y J.E. Velázquez
- VLSI Design 13, 399-404 (2001)

67. Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-x,Gex heterostructures

- M. J. Martín, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 15, 277-285 (2000)

66. Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer

- M. J. Martín, D. Pardo and J. E. Velázquez
- Journal of Applied Physics 88, 1511 (2000)

65. Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Microelectronics Relialibility 40, 1951-1954 (2000)

64. Frontiers in electronic noise: from submicron to nanostructures

- L. Reggiani, C. Pennetta, Gy. Trefán, J.C. Vaissiere, L. Varani, V. Gruzhinskis, A. Reklaitis, P. Shiktorov, E. Starikov, T. González, J. Mateos, D. Pardo and O. M. Bulashenko
- International Journal of High Speed Electronics and Systems 10, 111-117 (2000)

63. Monte Carlo simulator for the design optimization of low-noise HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
- IEEE Transactions on Electron Devices 47, 1950-1956 (2000)

62. Langevin forces and generalized transfer fields for noise modeling of deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- IEEE Transactions on Electron Devices 47, 1992-1998 (2000)

61. Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields

- S. Pérez, T. González, S. Delage, and J. Obregon
- Journal of Applied Physics 88, 800-807 (2000)

60. Monte Carlo investigation of shot-noise suppression in nondegenerate ballistic and diffusive transport regimes

- L. Reggiani, A. Reklaitis, T. González, J. Mateos, D. Pardo, and O. M. Bulashenko
- Australian Journal of Physics 53, 3-34 (2000)

59. Improved Monte Carlo algorithm for the simulation of d-doped AlInAs/GaInAs HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, H. Happy and A. Cappy
- IEEE Transactions on Electron Devices 47, 250-253 (2000)

58. 2D bipolar Monte Carlo calculation of current fluctuations at the onset of quasisaturation of a Si BJT

- M. J. Martín, D. Pardo and J. E. Velázquez
- Physica B 272, 260-262 (1999)

57. Generalized transfer fields and Langevin forces for hot-carriers fluctuations in semiconductor submicron devices

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos and D. Pardo
- Physica B 272, 260-262 (1999)

56. Joint effect of Fermi and Coulomb correlations on shot-noise suppression in ballistic conductors

- T. González, J. Mateos, D. Pardo and L. Reggiani
- Physica B 272, 285-287 (1999)

55. Thermal conductivity of nonequilibrium carriers in semiconductors

- L. Varani, P. Gaubert, J. C. Vaissiere, J. P. Nougier, J. Mateos, T. González, D. Pardo, L. Reggiani, E. Starikov, P. Shiktorov, and V. Gruzinskis
- Physica B 272, 247-249 (1999)

54. Shot-noise suppression in nondegenerate semiconductors: the role of an energý-dependent scattering time

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Physica B 272, 282-284 (1999)

53. Injection statistics simulator for dynamic analysis of noise in mesoscopic devices

- T. González, J. Mateos, D. Pardo, L. Varani, and L. Reggiani
- Semiconductor Science and Technology 14, L37-L40 (1999)

52. Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

- J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
- Semiconductor Science and Technology 14, 864-870 (1999)

51. González et al. Reply:

- T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Physical Review Letters 83, 1268 (1999) (1999)

50. Microscopic analysis of shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko, and L. Reggiani
- Physical Review B 60, 2670-2679 (1999)

49. Towards the Monte Carlo simulation of resonant tunneling diodes using time-dependent wavepackets and Bohm trejectories

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, J. Mateos, T. González, D. Pardo and O. Vanbesien
- Semiconductor Science and Technology 14, 532-542 (1999)

48. Spatio-temporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, J. C. Vaissiere, and J. P. Nougier
- Applied Physics Letters 74, 723-725 (1999)

47. Hydrodynamic modeling of spatial cross-correlation of conduction current fluctuations

- P. Shiktorov, J. C. Vaissiere, L. Varani, J. P. Nougier, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
- Material Science Forum 297-298, 147-150 (1999)

46. Shot-noise suppression in nondegenerate conductors

- T. González
- Material Science Forum 297-298, 139-146 (1999)

45. Microscopic analysis of the influence of strain and bandgap offsets on noise performance in SiGe/Si heterojunctions

- M. J. Martín, D. Pardo and J. E. Velázquez
- Journal of Applied Physics 84, 5012-5020 (1998)

44. Extremely low noise InGaP/GaAs HBT oscillator at C-band

- S. Pérez, D. Floriot, Ph. Maurin, Ph. Bouquet, P. M. Gutiérrez, J. Obregon and S. Delage
- Electronics Leters 34, 813-815 (1998)

43. Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Semiconductor Science and Technlolgy 13, 714-724 (1998)

42. Influence of the Al mole fraction on the noise performance of GaAs/AlxGa1-xAs HEMTs

- J. Mateos, D. Pardo, T. González, P. Tadyszak, F. Daneville and A. Cappy
- IEEE Transactions on Electron Devices 45, 2081-2083 (1998)

41. An acceleration fluctuation scheme for diffusion noise sources within a generalized impedance field method

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, T. González, J. Mateos, D. Pardo and L. Varani
- Physical Review B 57, 11866-11869 (1998)

40. Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

- T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Physical Review Letters 80, 2901-2904 (1998)

39. Noise analysis of 0.1 nm gate MESFETs and HEMTs

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Solid-State Electronics 42, 79-85 (1998)

38. Bohm trajectories for the Monte Carlo simulation of quantum-based devices

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
- Applied Physics Letters 72, 806-808 (1998)

37. Transfer impedance calculations of electronic noise in two-terminal n+nn+ structures

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos, D. Pardo and L. Reggiani
- Journal of Applied Physics 83, 2052-2066 (1998)

36. Electron-number statistics and shot-noise suppression by Coulomb correlation in nondegenrate ballistic transport

- O. Bulashenko, J. Mateos, D. Pardo, T. González, L. Reggiani and J. M. Rubí
- Physical Review B 57, 1366-1369 (1998)

35. Study of current mode noise in Si/SiGe strained heterojunctions

- M . J. Martín, D. Pardo y J. E. Velázquez
- Physics Status Solidi (b) 204, 462-465 (1997)

34. Analysis of voltage noise in forward-biased Silicon bipolar homojunctions: low and high injection regimes

- M. J. Martín, D. Pardo and J. E. Velázquez
- Applied Physics Letters 71, 3382-3384 (1997)

33. Quantum Monte Carlo simulation of tunneling devices using Bohm trajectories

- X. Oriols, J. J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
- Physica Status Solidi (b) 204, 404-407 (1997)

32. Noise and transit time in ungated FET structures

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- IEEE Transactions on Electron Devices 44, 2128-2135 (1997)

31. On the spectral strength of the noise source entering the transfer impedance method

- P. Shiktorov, V. Gruzinskis, E. Starikov, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
- Applied Physics Letters 71, 3093-3095 (1997)

30. Shot-noise suppression in mesoscopic structures due to long-range Coulomb interaction

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Physica Status Solidi (b) 204, 450-452 (1997)

29. Hot-carrier thermal conductivity from the simulation of submicron semiconductor structures

- P. Golinelli, R. Brunetti, L. Varani, J. C. Vaissiere, J. P. Nougier, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
- Semiconductor Science and Technology 12, 1511-1513 (1997)

28. Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

- T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
- Physical Review B 56, 6424-6427 (1997)

27. Microscopic analysis of electron noise in GaAs Schottky-barrier diodes.

- T. González, D. Pardo, L. Varani and L. Reggiani
- Journal of Applied Physics 82, 2349-2358 (1997)

26. Noise suppression due to long-range Coulomb interaction: Crossover between diffusive and ballistic transport regimes

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Semiconductor Science and Technology 9, 1053-1056 (1997)

25. Bohm trajectories for the modeling of tunneling devices

- J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos and D. Pardo
- Microelectronic Engineering 36, 125-128 (1997)

24. Monte Carlo analysis of electronic noise in semiconductor materials an devices

- L. Reggiani, P. Golinelli, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Microelectronics Journal 28, 183-198 (1997)

23. Analysis of current fluctuations in Silicon p+n and n+p homojunctions

- M. J. Martín, D. Pardo and J. E. Velázquez
- Journal of Applied Physics. 79, 6975-6981 (1996)

22. Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Solid-State Electronics 39, 1629-1636 (1996)

21. Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometer n+nn+ Silicon structures

- E. Starikov, P. Shiktorov, V. Gruzinskis, T. González, M. J. Martín, D. Pardo, L. Reggiani and L. Varani
- Semiconductor Science and Technology 11, 865-872 (1996)

20. Physical models of ohmic contact for Monte Carlo device simulation

- T. González and D. Pardo
- Solid-State Electronics 39, 555-562 (1996)

19. Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm

- M. J. Martín, T. González, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 11, 380-387 (1996)

18. Monte Carlo analysis of the behavior and spatial origin electronic noise in GaAs MESFETs

- T. González, D. Pardo, L. Varani, and L. Reggiani
- IEEE Transactions on Electron Devices 42, 991-997 (1995)

17. Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFETs

- T. González and D. Pardo
- IEEE Transactions on Electron Devices 42, 605-611 (1995)

16. High frequency noise spectra in semiconductor materials and devices

- L. Reggiani, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Lithuanian Journal of Physics 35, 395-403 (1995)

15. Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures

- J. Mateos, T. González and D. Pardo
- Applied Physics Letters 67, 685-687 (1995)

14. Theory of electronic noise in semiconductor materials and devices.

- L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
- Il Vuoto, Scienza e Tecnologia 24, 64-68 (1995)

13. Spatial extent of the correlation between local diffusion noise sources in GaAs

- J. Mateos, T. González and D. Pardo
- Journal of Applied Physics 77, 1564-1568 (1995)

12. Microscopic simulation of electronic noise in semiconductor materials and devices (artículo invitado)

- L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
- IEEE Transactions on Electron Devices ED-41, 1916-1925 (1994)

11. One-dimensional Monte Carlo analysis of electron transport in submicron silicon structures

- M. J. Martín, T. González, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 9, 1316-1323 (1994)

10. Hot-carrier fluctuations from ballistic to diffusive regimes in submicron semiconductor structures

- L. Varani, L. Reggiani, P. Houlet, J. C. Vaissière, J. P. Nougier, T. Kuhn, T. González and D. Pardo
- Semiconductor Science and Technology 9, 584-587 (1994)

9. A microscopic interpretation of hot-electron noise in Schottky-barrier diodes

- T. González, D. Pardo, L. Varani and L. Reggiani
- Semiconductor Science and Technology 9, 580-583 (1994)

8. Monte Carlo analysis of noise spectra in Schottky-barrier diodes

- T. González, D. Pardo, L. Varani and L. Reggiani
- Applied Physics Letters 63, 3040-3042 (1993)

7. Simulation of electron transport in Silicon: impact-ionization processes

- M. J. Martín, T. González, J. E. Velázquez and D. Pardo
- Semiconductor Science and Technology 8, 1291-1297 (1993)

6. Spatial analysis of electronic noise in submicron semiconductor structures

- T. González, D. Pardo, L. Varani and L. Reggiani
- Applied Physics Letters 63, 84-86 (1993)

5. Ensemble Monte Carlo with Poisson solver for the study of current fluctuations in homogeneous GaAs structures

- T. González and D. Pardo
- Journal of Applied Physics 73, 7453-7464 (1993)

4. Electron transport in InP under high electric field conditions

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Semiconductor Science and Technology 7, 31-36 (1992)

3. Analysis of the transient spectral density of velocity fluctuations in GaAs and InP

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Journal of Applied Physics 72, 2322-2330 (1992)

2. Monte-Carlo analysis of the transient spectral density of velocity fluctuations in semiconductors

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Applied Physics Letters 60, 613-615 (1992)

1. Five-valley model for the study of electron transport properties at very high electric fields in GaAs

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Semiconductor Science and Technology 6, 862-871 (1991)

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