NANELEC

JOURNALS

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Journals published on 2004.

15. On the influence of space-quantization effects on the RF noise behavior of DG MOSFETs

- R. Rengel, T. González and M. J. Martín
- Fluctuation and Noise Letters 4, L561-L569 (2004)

14. Design optimization of AlInAs/GaInAs HEMTs for low-noise applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 1228-1233 (2004)

13. Kink-effect related noise in short-channel InAlAs/InGaAs High Electron Mobility Transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 95, 8271-8274 (2004)

12. Non-linear effects in T-branch junctions

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- IEEE Electron Device Letters 25, 235-237 (2004)

11. Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures

- D. Persano Adorno, M. Zarcone, G. Ferrante, P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Physica Satus Solidi (c) 1, 1367-1376 (2004)

10. Design optimization of AlInAs/GaInAs HEMTs for high-frequency applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 521-528 (2004)

9. Quantum transport under high-frequency conditions: application to bound state resonant tunnelling transistors

- X. Oriols, A. Alarcón and J. Mateos
- Semiconductor Science and Technology 19, L69-L73 (2004)

8. Towards the nano-scale: Influence of scaling on the electronic trasport and small signal behaviour of MOSFETs

- R Rengel, D Pardo and M J Martin
- Nanotechnology 15, S276-S282 (2004)

7. Monte Carlo analysis of four-terminal ballistic rectifiers

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Nanotechnology 15, S250-S253 (2004)

6. Noise temperature reduction by doping in ballistic n+-n-n+ nanodiodes

- G Gomila, I R Cantalapiedra, T González and L Reggiani
- Semiconductor Science and Technology 19, S209-211 (2004)

5. 2D ensemble Monte Carlo modelling of bulk and FDSOI MOSFETs: active layer thickness and noise performance

- R Rengel, D Pardo and M J Martín-Martínez
- Semiconductor Science and Technology 19, S199-201 (2004)

4. Dynamical formation of hot-carrier intergroup noise under sub-terahertz cyclostationary conditions

- P Shiktorov, E Starikov, V Gruzinskis, L Reggiani, L V Varani, J C Vaissiere, S Pérez and T González
- Semiconductor Science and Technology 19, S170-S172 (2004)

3. Room temperature nonlinear transport in ballistic nanodevices

- T. Gonzalez, B. G. Vasallo, D. Pardo and J. Mateos
- Semiconductor Science and Technology 19, S125-S127 (2004)

2. A physically based investigation of the small-signal behaviour of bulk and fully-depleted silicon-on-insulator MOSFETs for microwave applications

- R Rengel, D Pardo and M J Martín
- Semiconductor Science and Technology 19, 634-643 (2004)

1. Monte Carlo simulation of Schottky diodes operating under TeraHertz cyclostationary conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- IEEE Electron Device Letters 25, 1-3 (2004)


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