NANELEC

JOURNALS

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Journals published on 1997.

12. Study of current mode noise in Si/SiGe strained heterojunctions

- M . J. Martín, D. Pardo y J. E. Velázquez
- Physics Status Solidi (b) 204, 462-465 (1997)

11. Analysis of voltage noise in forward-biased Silicon bipolar homojunctions: low and high injection regimes

- M. J. Martín, D. Pardo and J. E. Velázquez
- Applied Physics Letters 71, 3382-3384 (1997)

10. Quantum Monte Carlo simulation of tunneling devices using Bohm trajectories

- X. Oriols, J. J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
- Physica Status Solidi (b) 204, 404-407 (1997)

9. Noise and transit time in ungated FET structures

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- IEEE Transactions on Electron Devices 44, 2128-2135 (1997)

8. On the spectral strength of the noise source entering the transfer impedance method

- P. Shiktorov, V. Gruzinskis, E. Starikov, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
- Applied Physics Letters 71, 3093-3095 (1997)

7. Shot-noise suppression in mesoscopic structures due to long-range Coulomb interaction

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Physica Status Solidi (b) 204, 450-452 (1997)

6. Hot-carrier thermal conductivity from the simulation of submicron semiconductor structures

- P. Golinelli, R. Brunetti, L. Varani, J. C. Vaissiere, J. P. Nougier, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
- Semiconductor Science and Technology 12, 1511-1513 (1997)

5. Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

- T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
- Physical Review B 56, 6424-6427 (1997)

4. Microscopic analysis of electron noise in GaAs Schottky-barrier diodes.

- T. González, D. Pardo, L. Varani and L. Reggiani
- Journal of Applied Physics 82, 2349-2358 (1997)

3. Noise suppression due to long-range Coulomb interaction: Crossover between diffusive and ballistic transport regimes

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Semiconductor Science and Technology 9, 1053-1056 (1997)

2. Bohm trajectories for the modeling of tunneling devices

- J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos and D. Pardo
- Microelectronic Engineering 36, 125-128 (1997)

1. Monte Carlo analysis of electronic noise in semiconductor materials an devices

- L. Reggiani, P. Golinelli, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Microelectronics Journal 28, 183-198 (1997)


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