JOURNALS


Journals published on 2011.


11. Exploring digital logic design using nano-devices through Monte Carlo simulations

- I. Íñiguez-de-la-Torre, S. Purohit, V. Kaushal, M. Margala, M. Gong, R. Sobolewski, D. Wolpert, P. Ampadu, T. González, and J. Mateos
- IEEE Transactions on Nanotechnology 10, 1337-1346 (2011)

10. Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

- I. Íñiguez-de-la-Torre, J. Mateos, Y. Roelens, C. Gardès, S. Bollaert and T. González
- Nanotechnology 22, 445203 [1-5] (2011)

9. Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study

- A. Iñiguez-de-la-Torre, I. Iñiguez-de-la-Torre, J. Mateos and T. González
- Applied Physics Letters 99, 062109 [1-3] and Virtual Journal of Nanoscale Science & Technology 24 [8] (2011)

8. Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

- D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González
- Semiconductor Science and Technology 26, 055023 [1-11] (2011)

7. Monte Carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, E. Lefebvre, G. Moschetti, J. Grahn, and J. Mateos
- Acta Physica Polonica A 119, 222-224 (2011)

6. Monte Carlo analysis of the dynamic behavior of InAlAs/InGaAs velocity modulation transistors: a geometrical optimization

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Acta Physica Polonica A 119, 193-195 (2011)

5. Submillimeter-wave oscillations in recessed InGaAs/InAlAs heterostructures: origin and tuneability

- S. Pérez, J. Mateos, and T. González
- Acta Physica Polonica A 119, 111-113 (2011)

4. Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

- V. Kaushal, I. Iñiguez-de-la-Torre and M. Margala
- Solid-State Electronics 56, 120-129 (2011)

3. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 26, 025004 [1-7] (2011)

2. Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors

- J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González and S. Pérez
- Solid-State Electronics 56, 116-119 (2011)

1. Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

- R. Rengel, M. J. Martín and F. Danneville,
- IEEE Electron Device Letters 32, 72-74 (2011)


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