JOURNALS


Journals published on 2000.


9. Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-x,Gex heterostructures

- M. J. Martín, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 15, 277-285 (2000)

8. Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer

- M. J. Martín, D. Pardo and J. E. Velázquez
- Journal of Applied Physics 88, 1511 (2000)

7. Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Microelectronics Relialibility 40, 1951-1954 (2000)

6. Frontiers in electronic noise: from submicron to nanostructures

- L. Reggiani, C. Pennetta, Gy. Trefán, J.C. Vaissiere, L. Varani, V. Gruzhinskis, A. Reklaitis, P. Shiktorov, E. Starikov, T. González, J. Mateos, D. Pardo and O. M. Bulashenko
- International Journal of High Speed Electronics and Systems 10, 111-117 (2000)

5. Monte Carlo simulator for the design optimization of low-noise HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
- IEEE Transactions on Electron Devices 47, 1950-1956 (2000)

4. Langevin forces and generalized transfer fields for noise modeling of deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- IEEE Transactions on Electron Devices 47, 1992-1998 (2000)

3. Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields

- S. Pérez, T. González, S. Delage, and J. Obregon
- Journal of Applied Physics 88, 800-807 (2000)

2. Monte Carlo investigation of shot-noise suppression in nondegenerate ballistic and diffusive transport regimes

- L. Reggiani, A. Reklaitis, T. González, J. Mateos, D. Pardo, and O. M. Bulashenko
- Australian Journal of Physics 53, 3-34 (2000)

1. Improved Monte Carlo algorithm for the simulation of d-doped AlInAs/GaInAs HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, H. Happy and A. Cappy
- IEEE Transactions on Electron Devices 47, 250-253 (2000)


.