CONFERENCE PROCEEDINGS


Conference Proceedings published on all.


194. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, S. Pérez, T. González, and J. Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455727 (2021)

193. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

- E. Pérez-Martín, I. Íniguez-De-La-Torre, T. González, C. Gaquière, and J Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455737 (2021)

192. Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288553 (2015)

191. Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

- Ó. García-Pérez, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288539 (2015)

190. Carrier dynamics probed by noise in high‐frequency electronic devices

- T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288541 (2015)

189. Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087481 (2015)

188. Monte Carlo modeling of mobility and microscopic charge transport in supported graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087445 (2015)

187. Time-dependent physics of double-tunnel junctions

- V. Talbo, J. Mateos, S.Retailleau, P. Dollfus and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087477 (2015)

186. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087474 (2015)

185. Anomalous low-frequency noise Increase at the onset of oscillations in Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087504 (2015)

184. Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. Gonzalez and J. Mateos
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865816 (2014)

183. Frequency-dependent shot noise in single-electron devices

- V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865843 (2014)

182. Room temperature THz detection and emission with semiconductor nanodevices

- J. Mateos, J. F. Millithaler, I. Íñiguez‐de‐la‐Torre, A. Íñiguez‐de‐la‐Torre, B. G. Vasallo, S. Pérez, P. Sangare, G. Ducournau, C. Gaquiere, Y. Alimi, L. Zhang, A. Rezazadeh, A. M. Song, A. Westlund, J. Grahn, and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 215-218. ISBN: 978-1-4673-4666-5 (2013)

181. Ballistic deflection transistor: geometry dependence and Boolean operations

- I. Íñiguez‐de‐la‐Torre, V. Kaushal, M. Margala, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 187-190. ISBN: 978-1-4673-4666-5 (2013)

180. Time‐domain Monte Carlo simulations of resonant‐circuit operation of GaN Gunn diodes

- S. García, B. G. Vasallo, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 79-82. ISBN: 978-1-4673-4666-5 (2013)

179. Monte Carlo analysis of thermal effects in Self‐Switching Diodes

- J. F. Millithaler, I. Iñiguez‐de‐la‐Torre, T. González and J. Mateos
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 45-48. ISBN: 978-1-4673-4666-5 (2013)

178. Accurate predictions of Terahertz noise in ultra-small quantum devices: A limiting factor for their commercial viability?

- X. Oriols, A. Benali, S. M. Yaro, G. Albareda, F. L. Traversa, J. Mateos and T. González
- 22nd International Conference on Noise and Fluctuations, 2013, pp. 1-4. ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578886 (2013)

177. Noise Equivalent Power in Terahertz detectors based on semiconductor nanochannels

- J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González and J. Mateos
- 22nd International Conference on Noise and Fluctuations, 2013, pp. 1-4. ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578885 (2013)

176. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. ISBN: 97888970100-2 (2013)

175. Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport

- C. Couso, R. Rengel and M. J.Martín
- 2013 Spanish Conference on Electron Devices, 2013, pp. 63-66 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481343 (2013)

174. Space quantization effects in Double Gate SB-MOSFETs: role of the active layer thickness

- J. S. García, M. J. Martín and R. Rengel
- 2013 Spanish Conference on Electron Devices, 2013, pp. 59-62 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481342 (2013)

173. A Monte Carlo Study of Electron Transport in Suspended Monolayer Graphene

- R. Rengel, C. Couso and M. J. Martín
- 2013 Spanish Conference on Electron Devices, 2013, pp. 175-178 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481371 (2013)

172. Velocity and momentum fluctuations in Suspended Monolayer Graphene

- M. J. Martín, C. Couso and R. Rengel
- 22th International Conference on Noise and Fluctuations, 2013, pp. 1-4 ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578933 (2013)

171. Effect of the dopant segregation layer on the static characteristics of Schottky-Barrier n-MOSFETs

- C. Couso, E. Pascual, J. M. Galeote, M. J. Martín and R. Rengel
- 8th Internacional Caribbean Conferencia on Devices, Circuits and Systems (ICCDCS 2012), 2012, pp. 1-4 ISBN: 978-1-4577-1116-9 , DOI: 10.1109/ICCDCS.2012.6188919 (2012)

170. Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

- I. Íñiguez-de-la-Torre, T. González, H. Rodilla, B. G. Vasallo and J. Mateos
- APPLICATIONS OF MONTE CARLO METHOD IN SCIENCE AND ENGINEERING, pp. 803-828 (2011) Edited by: S. Mark and S. Mordechai. InTech, Rijeka (Croacia) (2011)

169. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. (2011)

168. Wide band gap self-switching nanodevices for THz applications at room temperature

- C. Gaquiere, G. Ducournau, P. Sangaré, B. Grimbert, M. Faucher, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, T. González and J. Mateos
- Proceedings of the 41st European Microwave Conference, 2011, pp. 1150-1152. (2011)

167. Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

- H. Rodilla, B. G. Vasallo, J. Mateos, G. Moschetti, J. Grahn, and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 188-191 (2011)

166. Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

- D. Pardo, S. Pérez, J. Grajal, J. Mateos and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 110-113 (2011)

165. Noise and Terahertz rectification in semiconductor diodes and transistors

- J. Mateos, I. Íñiguez-de-la-Torre and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 16-21. (2011)

164. Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs

- M. J. Martin, R. Rengel, J. M. Galeote, M. de Souza, and M. A. Pavanello
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #134 (2011)

163. A Monte Carlo model for the study of n-type strained Silicon Schottky Diodes

- J. M. Galeote, R. Rengel, E. Pascual, and M. J. Martín
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #121 (2011)

162. Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications

- D. Pardo, J. Grajal de la Fuente, S. Pérez, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #95. (2011)

161. Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

- B. García, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #93. (2011)

160. Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J.n Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #78. (2011)

159. OPTTR induced current oscillations in GaN diodes Monte Carlo simulations

- A. Íñiguez-de-la-Torre, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #77 (2011)

158. Toward THz Gunn Oscillations in Planar GaN Nanodiodes (artículo invitado)

- A. Íñiguez-de-la-Torre, J. Mateos, I. Íñiguez-de-la-Torre, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #53. (2011)

157. Sub-Thz frequency analysis in nano-scale devices at room temperature

- I. Iñiguez-de-la-Torre, V. Kaushal, M. Margala, T. González and J. Mateos
- Proceedings of the Device Research Conference 2010 (DRC 2010), DOI:10.1109/DRC.2010.5551864, 2010 (2010)

156. THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, A. M. Song and J. Mateos
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 369-372 (2010)

155. Plasma-resonant THz detection with HEMTs

- J. Mateos, H. Marinchio, C. Palermo, L. Varani and T. González
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 344-347 (2010)

154. Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

- H. Rodilla, T. González, M. Malmkvist, E. Lefebvre, G. Moschetti, J. Grahn and J. Mateos
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 333-336 (2010)

153. DC and RF cryogenic behaviour of InAs/AlSb HEMTs

- G. Moschetti, P.-A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos and J. Grahn
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 321-324. (2010)

152. Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regime

- G. Sabatini, H. Marinchio, L. Varani, C. Palermo, J. F. Millithaler, L. Reggiani, H. Rodilla, T. Gonzàlez, S. Pérez and J. Mateos
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 345-348 (2009)

151. Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis

- E. Pascual, R. Rengel and M. J. Martín
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 329-332 (2009)

150. Modelling of hig-frequency noise in III-V double-gate HFETs (artículo invitado)

- B. G. Vasallo
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 299-304 (2009)

149. High frequency noise in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 237-240 (2009)

148. Noise enhanced THz rectification tuned by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 229-232 (2009)

147. Monte Carlo Simulation of GaN HEMTs: Influence of GaN p-type Doping and High Temperature of Operation

- J. Mateos, S. Pérez, R. Cuerdo, E. Muñoz , F. Calle and T. González
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Wed3, pp. 26-29 (2009)

146. Gunn oscillations in asymmetric nanodiodes based on narrow and wide band-gap semiconductors: Monte Carlo simulations

- T. González, I. Íñiguez-de-la-Torre, D. Pardo, J. Mateos, and A. M. Song
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Tu5, pp. 20-23 (2009)

145. Monte Carlo simulation of InAs/AlSb HEMTs

- H. Rodilla, J. Mateos, T. González, M. Malmkvist, Eric Lefebvre and J. Grahn
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Mon7, pp. 10-13 (2009)

144. Tunable Terahertz resonance in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D., T. González and A. M. Song
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 463-466 (2009)

143. Monte Carlo analysis of thermal effects in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 459-462 (2009)

142. Frequency response of T-shaped three branch junctions as mixers and detectors

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, J. Mateos, Y. Roelens and S. Bollaert
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 168-171. (2009)

141. Monte Carlo simulation of Sb-based heterostructures

- H. Rodilla, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 152-155. (2009)

140. Monte Carlo study of an InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 128-131. (2009)

139. Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study

- E. Pascual, R. Rengel and M. J. Martín
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 108-111. (2009)

138. Comparative study of laterally asymmetric channel and conventional MOSFETs

- R. Rengel, M. J. Martín and F. Danneville
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 96-99. (2009)

137. Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- Proceedings of the 2008 International Conference on Indium Phosphide and Related Materials (IPRM 08), IEEE Catalog CFP08IIP-CDR, 2008, p89 (2008)

136. Kinetic and partial-differential equation modeling of noise in Schottky barrier diodes: a comparison

- F. L.Traversa, F. Bertazzi, F. Bonani, G. Ghione, S.Pérez, J. Mateos, T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 321-324 (2007)

135. Microscopic analysis of noise in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 317-320 (2007)

134. Noise anaysis of plasma wave oscillations in InGaAs channels

- J. Pousset, J. F. Millithaler, C. Palermo, G. Sabatini, H. Marinchio, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, E. Starikov, P. Shiktorov, V. Gruzhinskis and L. Reggiani
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 201-204 (2007)

133. Monte Carlo investigation of THz oscillations in InAlAs/InGaAs heterostructures by means of current and voltage noise spectra

- S. Pérez, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 197-200 (2007)

132. Noise behavior of InP-based double-gate and standard HEMTs: a comparison

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 167-170 (2007)

131. RF noise and scaling in nanometer SOI MOSFETs: influence of quasiballistic transport

- M. J. Martín, R. Rengel, E. Pascual and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 99-102 (2007)

130. Monte Carlo simulation of GaN HEMT degradation mechanisms

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 233-236 (2007)

129. Three-terminal ballistic junctions with Schottky gates

- C. Gardès, Y. Roelens, S. Bollaert, A. Cappy, X. Wallart, J. Mateos, T. González and B. G. Vasallo
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 153-156 (2007)

128. Monte Carlo analysis of quantum tunnelling and thermionic transport in a reverse biased Schottky diode

- E. Pascual, R. Rengel y M. J. Martín
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 108-111 (2007)

127. Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

- M. J. Martín, R. Rengel, E. Pascual and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 340-343 (2007)

126. InAlAs/InGaAs heterostructures for THz generation

- S. Pérez, J. Mateos, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 127-130 (2007)

125. Monte Carlo simulation of AlGaN/GaN heterostructures

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 84-87 (2007)

124. Monte Carlo comparison between InAlAs/InGaAs double gate and standard HEMTs

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 80-83 (2007)

123. Surface charge effects in ballistic T-branch nanojunctions

- I. Íñiguez de la Torre, J. Mateos, T. González, D. Pardo, S. Bollaert, Y. Roelens and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 48-51 (2007)

122. Transit time and velocity distribution functions in decananometer gate-length SOI MOSFETs

- M. J. Martín and Raúl Rengel
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 305-308 (2006)

121. Monte Carlo comparison between InP-based double-gate and standard HEMTs

- B.G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
- Proceedings of the 1st European Microwave Integrated Circuits Conference, IEEE Catalog 06EX1410, 2006, pp. 304-307. (CD) (2006)

120. Ultra Fast Gunn Effect at THz Frequencies in HEMTs

- J. Mateos, S. Perez, D. Pardo and T. González
- Proceedings of the 2006 International Conference on Indium Phosphide and Related Materials (IPRM 06), IEEE Catalog 06CH37737C, 2006, pp. 313-316 (WP13). (CD) (2006)

119. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 109-113 (2006)

118. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 291-294 (2006)

117. Statistical investigation of electronic transport in decananometer gatelength SOI MOSFETs

- M. J. Martín and R. Rengel
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

116. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

115. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

114. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

- R. Rengel, J. Mateos, T. González, D. Pardo, G. Dambrine, F. Danneville and M. J. Martín
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.497-502 (2005)

113. Terahertz emission and noise spectra in HEMTs (artículo invitado)

- J. Mateos, S. Pérez, D. Pardo, T. González, J. Łusakowski, N. Dyakonova, W. Knap, S. Bollaert, Y. Roelens, A. Cappy, J.F. Millithaler and L. Varani
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.423-430. (2005)

112. On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs

- R. Rengel, M. J. Martín, G. Pailloncy, G. Dambrine and F. Danneville
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 745-748. (2005)

111. Non-linear noise in nanometric Schottky barrier diodes (artículo invitado)

- S. Pérez, T. González, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 753-758 (2005)

110. Terahertz emission from nanometric HEMTs analyzed by noise spectra

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 335-338. (2005)

109. B. G. Vasallo, J. Mateos, D. Pardo and T. González

- Kink effect in InAlAs/InGaAs short-channel HEMTs: Influence on the dynamic and noise performance
- Proceedings of the 2005 International Conference on Indium Phosphide and Related Materials (IPRM 05), IEEE Catalog 05CH37633C, 2005, p40. (CD) (2005)

108. InP based ballistic nanodevices (artículo invitado)

- A. Cappy, J. S. Galloo, S. Bollaert, Y. Roelens, J. Mateos, T. González and W. Knap
- Proceedings of the 2005 International Conference on Indium Phosphide and Related Materials (IPRM 05), IEEE Catalog 05CH37633C, 2005, p217. (CD) (2005)

107. Monte Carlo analysis of nano-scale Schottky diodes por THz generation

- S. Pérez, T. González, L. Varani, C. Palermo, J.C. Vaissiere, J.F. Millithaler, E. Starikov, P. Shiktorov, V. Gruzinskis and L. Reggiani
- Proc. of 5th Int. Conf. and 7th Annual General Meeting of the European Society for Precision Engineering and Nanotechnology (EUSPEN), Bedford, 2005, Vol. 2, pp. 763-766 (2005)

106. THz operation of self-switching nanodiodes and nanotransistors

- J. Mateos, A. M. Song, B. G. Vasallo, D. Pardo and T. González
- Nanotechnology II. Proc. of SPIE 5838, 2005, pp. 145-153 (2005)

105. Monte Carlo characterization of fabricated Partially-Depleted SOI MOSFETs: high-frequency performance

- R. Rengel, M. J. Martín, G. Pailloncy, G. Dambrine, and F. Danneville
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-085(1-4) (2005)

104. Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-024(1-4) (2005)

103. Electron transport and noise in Schottky diodes with electron traps in the active layer

- S. Pérez and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-022(1-4) (2005)

102. A simple approach for the fabrication of ultrafast unipolar diodes

- J. Mateos, A. M. Song, B. G. Vasallo, D. Pardo and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-018(1-4) (2005)

101. Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure

- J. S. Galloo, Y. Roelens, S. Bollaert, Pichonat E, X. Wallart, A. Cappy, J Mateos, and T. González
- Proceedings of the 34th European Microwave Conference (EuMC 2004 - GAAS2004), European Microwave Association, 2004, pp. 219‑222. (2004)

100. Ballistic GaInAs/AlInAs devices technology and characterisation at room temperature

- J. S. Galloo, Y. Roelens, S. Bollaert, Pichonat E, X. Wallart, A. Cappy, J Mateos, and T. González
- Proceedings of the IEEE Nano 2004 Conference, IEEE Catalog (CD): 04TH8757C, 2004, 3p. (2004)

99. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381 (2004)

98. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)

97. Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs

- R. Rengel, D. Pardo, and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 96-106 (2004)

96. Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise

- R. Rengel, T. González and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 519-528. (2004)

95. Noise in Shottky-barrier diodes: from static to large-signal operation

- P. Shiktorov, S. Pérez, T. González, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 322-336. (2004)

94. Nonlocal effects and transfer fields for electronic noise in small devices

- L. Varani, J. C. Vaissiere, P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 1-15. (2004)

93. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381. (2004)

92. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)

91. Monte Carlo simulation of ballistic nanodevices for THz applications

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 109-112 (2003)

90. Energy correlations and Coulomb suppression of shot noise in ballistic conductors

- T. González, J. Mateos, D. Pardo, G. Gomila, I. R. Cantalapiedra and L. Reggiani
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 93-96 (2003)

89. A Monte Carlo approach to current fluctuations under high-frequency large-amplitude cyclostationary conditions

- L. Varani, C. Palermo, J. C. Vaissiere, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, S. Pérez and T. González
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 81-84 (2003)

88. Monte Carlo simulation of large-signal noise in Schottky diodes

- S. Pérez, T. González, E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 645-649. (2003)

87. Analytical and numerical modelling of electronic noise in ballistic diodes (artículo invitado)

- T. González
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 607-613. (2003)

86. Resonant-like enhancement of hot-carrier noise under high-frequency large-signal operation

- E. Starikov, P. Shiktorov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 599-602. (2003)

85. Microscopic analysis of the high-frequency noise behavior of fabricated Fully-Depleted SOI MOSFETs

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 585-588. (2003)

84. Noise associated with the kink effect in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 357-360. (2003)

83. Noise in advanced III-V FETs (artículo invitado)

- J. Mateos
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 347-352 (2003)

82. Kink-effect-related noise in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 415-423 (2003)

81. High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 379-386. (2003)

80. III-V HEMTs: low noise devices for high frequency applications (artículo invitado)

- J. Mateos
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 313-327. (2003)

79. Microscopic investigation of large-signal noise in semiconductor materials and devices (artículo invitado)

- T. González, S. Pérez, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 252-266 (2003)

78. Room temperature nonlinear transport in InGaAs/AlInAs ballistic nanodevices

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, H. Boutry, B. Hackens, V. Bayot, L. Bednarz, P. Simon, I. Huynen, J.S. Galloo, Y. Roelens, X. Wallart, S. Bollaert and A. Cappy
- Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 03CH37413, 2003, pp. 484-487. (2003)

77. Monte Carlo analysis of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 03CH37413, 2003, pp. 106-109. (2003)

76. Comparative study of the dynamic performance of bulk and FDSOI MOSFET by means of a Monte Carlo simulation

- R. Rengel, D. Pardo and M. J. Martín
- 2003-05 Silicon-on-Insulator Technology and Devices, The Electrochemical Society, 2003, pp. 283-286 (2003)

75. Monte Carlo simulation of electronic noise under large-signal operation

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 504-511. (2003)

74. Monte Carlo simulation of noise in electronic devices: limitations and perspectives (artículo invitado)

- T. González, J. Mateos, M. J. Martín-Martínez, S. Pérez, R. Rengel, B. G. Vasallo and D. Pardo
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 496-503. (2003)

73. High order harmonics extraction for THz radiation generation in wide band gap semiconductors

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, S. Pérez and T. González
- Proceedings of the 26th International Conference on the Physics of Semiconductors, IOP Conference Series 171, 2003, M1.2 (1-6) (2003)

72. Microscopic investigation of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, VII-07(1-4) (2003)

71. Noise analysis of semiconductor submicron structures operating under large-signal regime

- S. Pérez and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-08(1-4) (2003)

70. Impact of downscaling on dynamic and noise parameters of submicron MOSFETs

- R. Rengel, D. Pardo and M. J. Martín
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, II-07(1-4) (2003)

69. Dynamic and noise behavior of short-gate FDSOI MOSFETs: numerical and experimental analysis

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-07(1-4) (2003)

68. Ballistic nanodevices for THz Data Processing. Monte Carlo simulations

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, II-05(1-4) (2003)

67. Monte Carlo calculations of shot noise in mesoscopic structures

- T. González
- Noise and Fluctuation Control in Electronic Devices, pp. 307-332 - Edited by: Alexander A. Balandin, American Scientific Publishers, Stevenson Ranch, CA (USA) (2002)

66. Electronic transport and noise in nanoelectronic ballistic n+-i-n+ diodes

- G. Gomila, R. Cantalapiedra, T. González, and L. Reggiani
- Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, 2002, pp. 235-238 (2002)

65. 0.12 µm gate In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

- X. Wallart, S. Bollaert, S. Lepilliet, A. Cappy, E. Jalaguier, and J. Mateos
- Proceedings of the Twenty-Eighth International Symposium on Compound Semiconductors, IOP conference series 170, 2002 (2002)

64. Improvement of the high-frequency performance of HEMTs by bufferless technology

- J. Mateos, T. González, D. Pardo, S. Bollaert, X. Wallart, and A. Cappy
- Proceedings of the 14th Indium Phosphide and Related Materials Conference, IEEE Catalog 02CH37307, 2002, pp. 173-176. (2002)

63. Fabrication of a 0.12 µm gate In0.52Al0.48As/In0.53Ga0.47As HEMT on transferred substrate

- S. Bollaert, X. Wallart, S. Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar and J. Mateos
- GAAS 2001 Proceedings, Microwave Engineering Europe, 2001, pp. 171-173 (2001)

62. Design and realization of sub 100nm gate length HEMTs

- T. Parenty, S. Bollaert, J. Mateos and A. Cappy
- IEEE International Conference on Indium Phosphide and Related Materials, 2001, pp. 626-629. (2001)

61. Noise optimization of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty, and A. Cappy
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 245-248. (2001)

60. Microscopic analysis of microwave noise sources in SiGe HBT’s

- M.J. Martín, J. Mateos, D. Pardo, and T. González
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 217-220. (2001)

59. Monte Carlo simulations of mesoscopic shot noise (artículo invitado)

- T. González
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 431-436. (2001)

58. Microscopic analysis of generation-recombination noise upconversion in semiconductors

- S. Pérez, T. González, S. L. Delage, and J. Obregon
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 265-268 (2001)

57. Influence of high-injection conditions on the noise behavior in Si BJTs and SiGe HBTs at RF frequencies

- M. J. Martín, T. González, and D. Pardo
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 145-148. (2001)

56. Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 85-88. (2001)

55. Monte Carlo analysis of a 0.3 µm gate length MOSFET

- R. Rengel, M. J. Martín y D. Pardo
- Actas de la 3ª Conferencia De Dispositivos Electrónicos, 2001, pp.21-24 (2001)

54. Comparative analysis of current fluctuations in Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez T. González, and D. Pardo
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1761-1762. (2001)

53. Design optimization of low-noise HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1777-1778. (2001)

52. When macroscopic semiconductors display shot noise

- G. Gomila, L. Reggiani, and T. González
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1351-1352. (2001)

51. Fermi and Coulomb suppression of shot noise suppression in ballistic diodes

- T. González, J. Mateos, D. Pardo and L. Reggiani
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1343-1344. (2001)

50. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the Seventh International Workshop on Computational Electronics. (2000)

49. Design optimization of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- GAAS 2000 Conference Proceedings, Microwave Engineering Europe, 2000, pp. 624-627. (2000)

48. Can the dual property of noise representation be recovered within generalized field methods?

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
- Proceedings of the 2nd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 511, 2000, pp. 527-532 (2000)

47. The puzzle of 1/3 shot-noise suppression in diffusive conductors : universality or numerical coincidence? (artículo invitado)

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Proceedings of the 2nd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 511, 2000, pp. 71-82. (2000)

46. Physically based comparison of current noise analysis of Si BJT’s and SiGe HBT’s.

- M. J. Martín y D. Pardo
- Proceedings of the 30th European Solid-State Device Research Conference, Editions Frontieres, 2000, pp. 148-151 (2000)

45. Monte Carlo simulation of electronic noise in short channel d-doped AlInAs/GaInAs HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel and A. Cappy
- Proceedings of the 15th International Conference on Noise in Physical Systems and 1/f fluctuations, Bentham Press, 1999, pp. 279-282. (1999)

44. Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Proceedings of the 15th International Conference on Noise in Physical Systems and 1/f fluctuations, Bentham Press, 1999, pp. 134-137. (1999)

43. SiGe HBT RF technology for mobile communications : MMIC active filters

- M.J. Martín Martínez and J. L Tauritz,
- Actas de la 2ª Conferencia De Dispositivos Electrónicos, 1999, pp.109-113. (1999)

42. InGaP/GaAs HBT: Application to the design of ultra-low phase noise oscillators

- S. Pérez, D. Floriot, P.M.Gutiérrez, J. Obregon, and S. Delage
- Actas de la Conferencia de Dispositivos Electrónicos, 1999, pp. 61-64. (1999)

41. Microscopic analysis of the influence of high doping and strain on electron transport in SiGe/Si and Si/SiGe

- R. Rengel Estévez, J. E. Velázquez and M. J. Martín.
- Actas de la 2ª Conferencia De Dispositivos Electrónicos, 1999, pp.167-170. (1999)

40. 2D Monte Carlo comparison of bipolar transport and current fluctuations at the onset of quasi-saturation of a Si BJT and a Si/Si1-xGex/Si HBT

- M. J. Martín, D. Pardo and J. E. Velázquez,
- Actas de la 2ª Conferencia De Dispositivos Electrónicos, 1999, pp.175-179. (1999)

39. Monte Carlo analysis of static, dynamic and noise behavior of a recessed T-gate HEMT

- J. Mateos, T. González, and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1999, pp. 391-394. (1999)

38. Coulomb and Fermi suppression of shot noise in ballistic conductors

- T. González, J. Mateos, and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1999, pp. 333-336. (1999)

37. 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Proceedings of the 24th International Conference on the Physics of Semiconductors, 1998, World Scientific, 1999, ISBN 981-02-4030-9 (CD), n. 84. (1999)

36. High Added Power InGaP/GaAs HBT Amplifier for Ku-band

- S. Pérez, D. Floriot, P.M.Gutiérrez, J. Obregon, and S. Delage
- Proceedings of the XIV Design of Circuits and Integrated Systems, 1999, pp. 45-49. (1999)

35. SiGe HBT RF technology for mobile communications : active filters based on bandpass amplifiers

- M. J. Martín and J. L Tauritz
- Proceedings of XIII Conference on Design of Circuits an Integrated Systems , Universitat de les Illes Balears, 1999, pp: 39-43. (1999)

34. Optimization of InGaP/GaAs HBTs Operation in Added Power for Communications Systems

- S. Pérez, D. Floriot, P. M.Gutiérrez, J. Obregon, and S. Delage
- Proceedings of the XIII Design of Circuits and Integrated Systems, 1998, pp. 582-585 . (1998)

33. Microscopic sudy of the influence of SiGe strained layer on voltage noise performance in SiGe/Si bipolar heterojunctions

- M. J. Martín and J. E. Velazquez
- Proceedings of XIII Conference on Design of Circuits an Integrated Systems, Copy Red, 1998, pp. 90-95. (1998)

32. 1.8 GHz active microwave filter realized in SiGe for mobile communications

- M. J. Martín, L. C. N. de Vreede, and J. L. Tauritz
- Proceedings of XIII Conference on Design of Circuits an Integrated Systems, Copy Red, 1998, pp. 136-139. (1998)

31. Active microwave filters realized in SiGe technology

- M. J. Martín, L. C. N. de Vreede and J. L. Tauritz
- Proceedings of 28th European Microwave Conference, Miller Freeman, 1998, pp. W- B15 (1998)

30. Filtros MMIC activos realizados en tecnología HBT de SiGe para comunicaciones móviles.

- M. J. Martín and J. Tauritz
- Proceedings del XIII Simposium Nacional. Unión Científica Internacional de Radio, Ediciones Iberdrola Instituto Tecnológico, 1998, pp. 187-8 (1998)

29. Microscopic description of diffusion noise sources

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, C. Pennetta, T. González, J. Mateos, D. Pardo and L. Varani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 148-151. (1997)

28. Microscopic analysis of high-frequency noise spectra in submicron Schottky-barrier diodes

- T. González, D. Pardo, L. Reggiani and L. Varani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 160-163. (1997)

27. Shot-noise suppression in ballistic transport due to long-range Coulomb interaction

- T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 289-292. (1997)

26. Simulación Monte Carlo de dispositivos de efecto túnel mediante trayectorias de Bohm

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, T. González, J. Mateos y D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 463-468. (1997)

25. Análisis numérico y experimental de estructuras MESFET y HEMT sin puerta

- J. Mateos, T. González and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 197-202. (1997)

24. Simulación microscópica de propiedades de transporte y ruido electrónico en dispositivos semiconductores

- T. González, J. E. Velázquez, M. J. Martín, J. Mateos and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 445-450. (1997)

23. Estudio Monte Carlo del ruido en heterouniones Si/Si1-x Gex

- M. J. Martín, D. Pardo and J. E. Velázquez
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 35-40. (1997)

22. Thermal conductivity of hot electrons in Si

- P. Golinelli, R. Brunetti, L. Varani, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
- Proceedings of the 23rd International Conference on the Physics of Semiconductors, 1996, World Scientific, 1997, pp. 79-82. (1997)

21. Diffusion coefficient to characterize local noise sources in submicron devices, is it a good magnitude?

- T. González, J. Mateos, D. Pardo, V. Gruzinskis, E. Starikov and P. Shiktorov
- Proceedings of the 1st International Conference on Unsolved Problems of Noise, World Scientific, 1997, pp. 189-193. (1997)

20. Monte Carlo comparative study of current-mode noise in Si/Si1-XGex strained heterojunctions

- M. J. Martín, D. Pardo and J.E. Velázquez
- Proceedings of the 27th European Solid-State Device Research Conference, Editions Frontieres, 1997, pp. 340-343. (1997)

19. A GaInP/GaAs HBT Dielectric Resonator Oscillator at 6.7 GHz

- S. Pérez, D. Floriot, Ph. Maurin, Ph. Bouquet, P.M.Gutiérrez, J. Obregon, and S. Delage
- Proceedings of the XII Design of Circuits and Integrated Systems, 1997, pp. 447-450 (1997)

18. Conception d’un oscillateur H.B.T. GaInP/GaAs très faible bruit de phase -124 dBc/Hz à 10 kHz en bande C

- P. Maurin. S. Pérez, P. Buquet, D. Floriot, J. Obregon, and S. Delage
- Actes de la Conference des Dixièmes Journées Nationales Microondes, 1997, pp. 260-261 (1997)

17. Advances in noise modelling of high-field transport in semiconductor materials and devices

- L. Reggiani, P. Golinelli, A. Greiner, C. Pennetta, V. Gruzinskis, E. Starikov, P. Shiktorov, L. Varani, J. C. Vaissiere, J. P. Nougier, D. Pardo, T. González, M. J. Martín and J. E. Velázquez
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 89-95 (1996)

16. Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

- P. Tadyszak, F. Daneville, A. Cappy, J. Mateos, T. González and D. Pardo
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 159-164. (1996)

15. Transit-time and noise performance of ungated MESFETs and HEMTs

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 171-176. (1996)

14. Hydrodinamic modelling of transport and noise spectra in n+nn+ semiconductor structures

- L. Reggiani, P. Shiktorov, V. Gruzinskis, E. Starikov, L. Varani, T. González, M. J. Martín and D. Pardo
- Proceedings of the 26th European Solid State Device Research Conference, Editions Frontieres, 1996, pp. 295-298. (1996)

13. Influence of real-space transfer on transit time and noise in HEMTs

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Proceedings of the 26th European Solid State Device Research Conference, Editions Frontieres, 1996, pp. 745-748. (1996)

12. Microscopic theory of electronic noise in semiconductor materials an devices (artículo invitado)

- L. Reggiani, P. Golinelli, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Proceedings of the 20th International Conference on Microelectronics, IEEE, 1995, vol. 2, pp. 633-637. (1995)

11. Spatial correlation between local diffusion noise sources in GaAs

- J. Mateos, T. González and D. Pardo
- Proceedings of the 13th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1995, pp. 181-184. (1995)

10. Plasma and transit-time effects on electronic noise in semiconductor n+nn+ structures (artículo invitado)

- L. Reggiani, P. Golinelli, E. Faucher, L. Varani, T. González and D. Pardo
- Proceedings of the 13th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1995, pp. 163-168. (1995)

9. Analytical and numerical modelling of current fluctuations in semiconductor ballistic transport

- L. Reggiani, L. Varani, T. González, D. Pardo and T. Kuhn
- Proceedings of the 22nd International Conference on the Physics of Semiconductors, World Scientific, 1995, pp. 1963-1966. (1995)

8. Diagonal and off-diagonal contributions to current noise in semiconductor unipolar structures

- T. González, D. Pardo, L. Reggiani and L. Varani
- Proceedings of the 22nd International Conference on the Physics of Semiconductors, World Scientific, 1995, pp. 77-80. (1995)

7. Microscopic simulation of electronic noise in semicoductor unipolar structures

- L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
- Proceedings of the Third International Worshop on Computational Electronics, Oregon State University, 1994, pp. 29-32. (1994)

6. Monte Carlo simulation of electronic noise in MESFETs

- T. González, D. Pardo, L. Varani and L. Reggiani
- Proceedings of the 1994 Gallium Arsenide Applications Symposium, Politecnico di Torino - IEEE MTT Society, 1994, pp. 385-388. (1994)

5. The microscopic interpretation of electron noise in Schottky-barrier diodes

- T. González, D. Pardo, L. Varani and L. Reggiani
- Proceedings of the 23rd European Solid State Device Research Conference, Editions Frontiers, 1993, pp. 115-118. (1993)

4. Monte Carlo analysis of voltage fluctuations in two-terminal semiconductor devices

- T. González, D. Pardo, L. Varani and L. Reggiani
- Simulation of Semiconductor Devices and Processes Vol. 5, Springer-Verlag, 1993, pp. 193-196. (1993)

3. Number and current fluctuations in submicron semiconductor structures

- L. Varani, L. Reggiani, T. Kuhn, P. Houlet, J. C. Vaissiere, J. P. Nougier, T. González and D. Pardo
- Noise in Physical Systems and 1/f fluctuations, AIP Conference Proceedings 285, 1993, pp. 329-332. (1993)

2. Spatial analysis of voltage fluctuations in semiconductor n+nn+ structures

- T. González, D. Pardo, L. Varani and L. Reggiani
- Noise in Physical Systems and 1/f fluctuations, AIP Conference Proceedings 285, 1993, pp. 220-223. (1993)

1. Simulación de estructuras n+nn+ submicrométricas de GaAs e InP. Influencia de los modelos de las bandas de conducción

- T. González, J. E. Velázquez y D. Pardo
- Microelectrónica 92: Tecnologías, Diseño, Aplicaciones, Universidad de Cantabria, 1993, pp. 100-102. (1993)


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