NANELEC

JOURNALS

All 2024 2023 2022 2021 2020 Proceedings Tesis

Journals published on 2020.

9. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

- E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
- Microelectronics Reliability 114, 113806 (2020)

8. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

- Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
- Smiconductor Science and Technology 35, 115009 (2020)

7. Noise and charge discreteness as ultimate limit for the T Hz operation of ultra‑small electronic devices

- E. Colomés, J. Mateos, T. González, and X. O riols
- Scientific Reports 10, 15990 (2020)

6. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
- IEEE Transactions on Electron Devices 9, 3530 (2020)

5. Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides

- R. Rengel, O. Castelló, E. Pascual, M. J. Martín, and J. M. Iglesias
- Journal of Physics D: Applied Physics 59, 395102 (2020)

4. Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Physica E: Low-dimensional Systems and Nanostructures 123, 114211 (2020)

3. Electronic transport and noise characterization in MoS2

- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 35, 055021 (2020)

2. Interplay between channel and shot noise at the onset of spiking activity in neural membranes

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 19, 792 (2020)

1. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

- E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 31, 405204 (2020)


.