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JOURNALS

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Journals published on 2001.

8. Monte Carlo simulation of electronic characteristics in short channel d-doped AlInAs/GaInAs HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
- Microelectronics Reliability 41, 73-77 (2001)

7. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
- VLSI Design 13, 85-90 (2001)

6. Transfer-field methods for electronic noise in submicron semiconductor structures

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- Rivista Nuovo Cimento 24(9), 1-71 (2001)

5. Monte Carlo analysis of dynamic and noise performance of submicron MOSFET at RF and microwave frequencies

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Semiconductor Science and Technology 16, 939-946 (2001)

4. Monte Carlo analysis of the noise behavior in Si BJT’s and SiGe HBT’s at RF frequencies

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Journal of Applied Physics 90, 1582-1588 (2001)

3. High Injection Effects on Noise Characteristics of Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Microelectronics Reliability 41, 847-854 (2001)

2. Monte Carlo analysis of the influence of dc conditions on the upconversion of generation-recombination noise in semiconductors

- S. Pérez, T. González, S. Delage, and J. Obregon
- Semiconductor Science and Technology 16, L8-L11 (2001)

1. An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution

- S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martín y J.E. Velázquez
- VLSI Design 13, 399-404 (2001)


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