- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Journal of Applied Physics 108, 094505 [1-5] (2010)
- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Semiconductor Science and Technology 25, 125013 [1-14] (2010)
- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 57, 2572-2578 (2010)
- R. Rengel and M. J. Martín
- IEEE Transactions on Electron Devices 57, 2448-2454 (2010)
- F. L. Traversa, F. Bertazzi, F. Bonani, S. Donati, G. Ghione, S. Pérez, J. Mateos and T. González
- IEEE Transactions on Electron Devices 57, 1539-1547 (2010)
- V. Kaushal, I. Iñiguez-de-la-Torre, H. Irie, G. Guarino, W. R. Donaldson, P. Ampadu, R. Sobolewski and M. Margala
- IEEE Transactions on Nanotechnology 9, 723-733 (2010)
- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González and A. M. Song
- International Journal of Numerical Modeling 23, 301-314 (2010)
- A. Iñiguez-de-la-Torre, J. Mateos and T. González
- Journal of Applied Physics 107, 053707 [1-6] (2010)