NANELEC

JOURNALS

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Journals published on 2014.

11. An assessment of available models for the design of Schottky-based multipliers up to THz frequencies

- D. Pardo, J. Grajal, C. G. Pérez-Moreno, and S. Pérez
- IEEE Transactions on Terahertz Science and Technology 4, 277-286 (2014)

10. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs HEMTs

- D. Moro-Melgar, J. Mateos, T. González and B. G. Vasallo
- Journal of Applied Physics 116, 234502 [1-7] (2014)

9. Operation of GaN planar nanodiodes as THz detectors and mixers

- I. Iñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos
- IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)

8. Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos
- Semiconductor Science and Technology 29, 115032 [1-9] (2014)

7. Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

- O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- Applied Physics Letters 105, 113502 [1-4] (2014)

6. On the effect of d-doping in self-switching diodes

- A. Westlund, I. Iñiguez-de-la-Torre, P. A. Nilsson, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière, L. Desplanque, X. Wallart, and J. Grahn
- Applied Physics Letters 105, 093505 [1-5] (2014)

5. Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

- J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos
- Applied Physics Letters 104, 073509 [1-4] (2014)

4. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

3. Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

- M. J. Martín, C. Couso, E. Pascual and R. Rengel
- IEEE Transactions on Electron Devices 99, 3955 (2014)

2. Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons

- R. Rengel, E. Pascual and M. J. Martín
- Applied Physics Letters 104, 233107 (2014)

1. Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime

- R. Rengel and M. J. Martín
- International Journal of Numerical Modelling 27, 792 (2014)


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