The group has 25 year experience in the field of modelling and simulation of semiconductor materials and micro- and nano-electronic devices, mainly using Monte Carlo techniques. During these years, many different systems of increasing complexity have been analyzed. The Monte Carlo programs developed for the analysis of these devices allow the study of both their static and dynamic performance, and also the noise characteristics. This research work has been performed in collaboration with several prestigious European and US Laboratories.
The main research lines of the group related to III-V semiconductors are the following:
- Design and simulation of:
- Development of electrothermal simulators of semiconductor devices
- Noise in semiconductor materials and devices operating under linear and nonlinear large-signal conditions
- Shot-noise suppression and enhancement in mesoscopic structures
- DC, pulse, noise and microwave characterization of semiconductor devices
In recent years, a significant activity in the field of modelling of advanced heterojunction devices has been developed; in particular, successful results have been obtained in the modelling of static, dynamic and noise behaviour of ultrashort gate-length InGaAs/AlInAs, InAs/GaSb and GaN/AlGaN diodes and transistors. Remarkably, by including real effects in the models (such as surface charges, parasitic capacitances and resistances, heating effects, etc.) the good agreement between simulations and experimental results has allowed to provide design rules for the fabrication of optimized devices.
To complement the modelling activities, in the last five years the group has set up an electrical characterization laboratory with all necessary facilities to fully characterize RF electronic devices, including DC, pulsed, RF and noise measurements. A laboratory (named “RF Electronic Devices”) in the new I+D+I building of the University of Salamanca has been allocated to the group to host this equipment.