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Articles Published

6. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

- B. Orfao, M. Abou Daher, R. A. Peña, B. G. Vasallo, S. Pérez, I. Íñiguez-de-la-Torre, G. Paz-Martínez, J. Mateos, Y. Roelens, M. Zaknoune, and T. González
- Journal of Applied Physics 135, 014501 (2024)

5. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

- T. Gonzalez, B. Orfao, S. Pérez, J. Mateos, and B. G. Vasallo
- Applied Physics Express 16, 024003 (2023)

4. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

- B. Orfao, G. Di Gioia, B. G. Vasallo, S. Pérez, J. Mateos, Y. Roelens, E. Frayssinet, Y. Cordier, M. Zaknoune, and T. González
- Journal of Applied Physics 132, 044502 (2022)

3. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, S. Pérez, T. González, and J. Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455727 (2021)

2. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

- B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
- IEEE Transactions on Electron Devices 68, 4296 (2021)

1. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
- IEEE Transactions on Electron Devices 9, 3530 (2020)