Susana Pérez Santos

Full Professor

Susana Pérez Santos

Full Professor
susana@usal.es
+34 699046732

Researcher ID: G-4502-2015


About


Susana Pérez graduated in Physics by the University of Salamanca in 1993, where she obtained the Ph.D. degree in 1999. Since 1994 she belongs to the Applied Physics Department from the University of Salamanca, where actually is Full Professor of Electronics. She has made several research stays in foreign centers such as Thomson-CSF (France), currently Thales - III-VLab, and Institut de Recherche en Communications Optiques et Microondes (University of Limoges), currently Xlim (France).

She was Vice President for Research and Knowledge Transfer of the University of Salamanca from 2017 to 2021, Head of the Applied Physics Department from 2012 to 2017 and Vice Dean of The Faculty of Science from 2008 to 2012.

Currently she belongs to the Research Group on High-Frequency Nanoelectronic Devices recognized by the University of Salamanca and to the Research Consolidated Unit UIC 015 recognized by the Junta de Castilla y León. She is author or co-author of 50 indexed papers (38 JCR articles), more than 45 papers in peer-reviewed conference proceedings and more than 60 contributions (11 invited talks) in international conferences. She has participated to more than 30 research projects funded by different institutions and companies, with a significant participation in international research projects: 1 EU funded projects (ROOTHz), 1 funded by NATO, 2 “Acciones Integradas” (1 with France and 1 with Italy) and several international research networks (Phantoms, GDR THz, GDRE).

 Her work has been devoted to the Monte Carlo simulation and characterization of III-V devices, mainly HEMTs and Schottky diodes.

Articles Published


90. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 69, 514 (2022)

89. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, S. Pérez, T. González, and J. Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455727 (2021)

88. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

- B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
- IEEE Transactions on Electron Devices 68, 4296 (2021)

87. Non-linear thermal resistance model for the simulation of high power GaN-based devices

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
- Semiconductor Science and Technology 36, 055002 (2021)

86. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
- IEEE Transactions on Electron Devices 9, 3530 (2020)

85. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

- H. Sánchez-Martín, S. Sánchez-Martín, I. Íñiguez-de-la-Torre , S. Pérez, J. A. Novoa , G. Ducournau, B. Grimbert, C. Gaquière, T. González and J. Mateos
- Semiconductor Science and Technology 33, 095016 (2018)

84. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

- H. Sánchez-Martín, J. Mateos, J. A. Novoa, J. A. Delgado-Notario, Y. M. Meziani, S. Pérez, H. Theveneau, G. Ducournau, C. Gaquière, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 113, 043504 (2018)

83. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

- H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Semiconductor Science and Technology 32, 035011 [1-8] (2017)

82. Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
- Semiconductor Science and Technology 31, 065005 [1-9] (2016)

81. Electrical and noise modelling of GaAs Schottky diode mixers in the THz band

- D. Pardo, J. Grajal, and S. Pérez
- IEEE Transactions on Terahertz Science and Technology 6, 69-82 (2016)

80. Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288553 (2015)

79. Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

- Ó. García-Pérez, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288539 (2015)

78. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087474 (2015)

77. Anomalous low-frequency noise Increase at the onset of oscillations in Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087504 (2015)

76. Shot-noise suppression effects in InGaAs planar diodes at room temperature

- Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- Journal of Physics: Conference Series 647, 012061 [1-4] (2015)

75. Temperature and surface traps influence on the THz emission from InGaAs diodes

- A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
- Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

74. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

- S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
- Semiconductor Science and Technology 30, 035001 [1-8] (2015)

73. An assessment of available models for the design of Schottky-based multipliers up to THz frequencies

- D. Pardo, J. Grajal, C. G. Pérez-Moreno, and S. Pérez
- IEEE Transactions on Terahertz Science and Technology 4, 277-286 (2014)

72. Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

- O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- Applied Physics Letters 105, 113502 [1-4] (2014)

71. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

70. Room temperature THz detection and emission with semiconductor nanodevices

- J. Mateos, J. F. Millithaler, I. Íñiguez‐de‐la‐Torre, A. Íñiguez‐de‐la‐Torre, B. G. Vasallo, S. Pérez, P. Sangare, G. Ducournau, C. Gaquiere, Y. Alimi, L. Zhang, A. Rezazadeh, A. M. Song, A. Westlund, J. Grahn, and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 215-218. ISBN: 978-1-4673-4666-5 (2013)

69. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. ISBN: 97888970100-2 (2013)

68. Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length

- S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- Journal of Applied Physics 114, 074503 [1-9] (2013)

67. Analysis of nonharmonic oscillations in Schottky diodes

- D. Pardo, J. Grajal, S. Pérez, T. González and J. Mateos
- Journal of Applied Physics 112, 053703 [1-9] (2012)

66. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. (2011)

65. Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

- D. Pardo, S. Pérez, J. Grajal, J. Mateos and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 110-113 (2011)

64. Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications

- D. Pardo, J. Grajal de la Fuente, S. Pérez, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #95. (2011)

63. Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

- D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González
- Semiconductor Science and Technology 26, 055023 [1-11] (2011)

62. Submillimeter-wave oscillations in recessed InGaAs/InAlAs heterostructures: origin and tuneability

- S. Pérez, J. Mateos, and T. González
- Acta Physica Polonica A 119, 111-113 (2011)

61. Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors

- J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González and S. Pérez
- Solid-State Electronics 56, 116-119 (2011)

60. A generalized drift-diffusion model for rectifying Schottky contact simulation

- F. L. Traversa, F. Bertazzi, F. Bonani, S. Donati, G. Ghione, S. Pérez, J. Mateos and T. González
- IEEE Transactions on Electron Devices 57, 1539-1547 (2010)

59. Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regime

- G. Sabatini, H. Marinchio, L. Varani, C. Palermo, J. F. Millithaler, L. Reggiani, H. Rodilla, T. Gonzàlez, S. Pérez and J. Mateos
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 345-348 (2009)

58. High frequency noise in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 237-240 (2009)

57. Monte Carlo Simulation of GaN HEMTs: Influence of GaN p-type Doping and High Temperature of Operation

- J. Mateos, S. Pérez, R. Cuerdo, E. Muñoz , F. Calle and T. González
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Wed3, pp. 26-29 (2009)

56. Monte Carlo analysis of thermal effects in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 459-462 (2009)

55. Plasmonic noise in Si and InGaAs semiconductor nanolayers

- J. Pousset, J.-F. Millithaler, L. Reggiani, G. Sabatini, C. Palermo, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, A. Bournel and P. Dollfus
- Journal of Physics: Conference Series 193, 012091 [1-4] (2009)

54. On the geometrical tunabililty of THz Gunn-like oscillations in InGaAs/InAlAs slot-diodes

- S. Pérez, J. Mateos, D. Pardo and T. González
- Journal of Physics: Conference Series 193, 012090 [1-4] (2009)

53. Monte Carlo investigation of TeraHertz plasma oscillations in gated ultrathin channel of n-InGaAs

- J. F. Millithaler, J. Pousset, L. Reggiani, P. Ziade, H. Marinchio, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Applied Physics Letters 95, 152102 [1-3] (2009)

52. Plasmonic noise in nanometric semiconductor layers

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: Theory and Experiment 2009, P02030 [1-12] (2009)

51. A Monte Carlo investigation of plasmonic noise in nanometric InGaAs channels

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: theory and experiment 2009, P01040 [1-12] (2009)

50. TeraHertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels

- J. F. Millithaler, L. Reggiani, J. Pousset, G. Sabatini, L. Varani, C. Palermo, J.Mateos, T. González, S. Pérez and D. Pardo
- Journal of Physics: Condensed Matter 20, 384210 [1-7] (2008)

49. THz Gunn-like oscillations in InGaAs/InAlAs planar diodes

- S. Pérez, T. González, D. Pardo and J. Mateos
- Journal of Applied Physics 103, 094516 [1-5] and Virtual Journal of Ultrafast Science 7 [6] (2008)

48. Monte Carlo investigation of THz plasma oscillations in ultra-thin layers of n‑type InGaAs

- J. F. Millithaler, L. Reggiani, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez and D. Pardo
- Applied Physics Letters 92, 042113 [1-3] (2008)

47. Monte Carlo simulation of plasma oscillations in ultra-thin layers

- J. F. Millithaler, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez, D. Pardo and L. Reggiani
- Physica Status Solidi (c) 5, 249-252 (2008)

46. Excitation of millimeter-wave oscillations in InAlAs/InGaAs heterostructures

- S. Pérez, J. Mateos, D. Pardo and T. González
- Physica Status Solidi (c) 5, 146-149 (2008)

45. Noise anaysis of plasma wave oscillations in InGaAs channels

- J. Pousset, J. F. Millithaler, C. Palermo, G. Sabatini, H. Marinchio, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, E. Starikov, P. Shiktorov, V. Gruzhinskis and L. Reggiani
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 201-204 (2007)

44. Monte Carlo investigation of THz oscillations in InAlAs/InGaAs heterostructures by means of current and voltage noise spectra

- S. Pérez, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 197-200 (2007)

43. Monte Carlo simulation of GaN HEMT degradation mechanisms

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 233-236 (2007)

42. InAlAs/InGaAs heterostructures for THz generation

- S. Pérez, J. Mateos, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 127-130 (2007)

41. Monte Carlo simulation of AlGaN/GaN heterostructures

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 84-87 (2007)

40. Ultra Fast Gunn Effect at THz Frequencies in HEMTs

- J. Mateos, S. Perez, D. Pardo and T. González
- Proceedings of the 2006 International Conference on Indium Phosphide and Related Materials (IPRM 06), IEEE Catalog 06CH37737C, 2006, pp. 313-316 (WP13). (CD) (2006)

39. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 291-294 (2006)

38. Numerical modelling of TeraHertz electronic devices

- L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissiere, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Pérez, D. Pardo and T. González
- Journal of Computational Electronics 5, 71-77 (2006)

37. Theoretical investigation of Schottky-barrier diodes noise performance in external resonant circuits

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Semiconductor Science and Technology 21, 550-557 (2006)

36. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

35. Terahertz emission and noise spectra in HEMTs (artículo invitado)

- J. Mateos, S. Pérez, D. Pardo, T. González, J. Łusakowski, N. Dyakonova, W. Knap, S. Bollaert, Y. Roelens, A. Cappy, J.F. Millithaler and L. Varani
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.423-430. (2005)

34. Non-linear noise in nanometric Schottky barrier diodes (artículo invitado)

- S. Pérez, T. González, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 753-758 (2005)

33. Terahertz emission from nanometric HEMTs analyzed by noise spectra

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 335-338. (2005)

32. Monte Carlo analysis of nano-scale Schottky diodes por THz generation

- S. Pérez, T. González, L. Varani, C. Palermo, J.C. Vaissiere, J.F. Millithaler, E. Starikov, P. Shiktorov, V. Gruzinskis and L. Reggiani
- Proc. of 5th Int. Conf. and 7th Annual General Meeting of the European Society for Precision Engineering and Nanotechnology (EUSPEN), Bedford, 2005, Vol. 2, pp. 763-766 (2005)

31. Electron transport and noise in Schottky diodes with electron traps in the active layer

- S. Pérez and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-022(1-4) (2005)

30. Current noise spectra of Schottky barrier diodes with electron traps in the active layer

- S. Pérez and T. González
- Journal of Applied Physics 97, 073708 [1-7] (2005)

29. Theoretical investigation of large-signal noise in nanometric Schottky-barrier diodes operating in external resonant circuits

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, J. C. Vaissiere, L. Reggiani, S. Pérez and T. González
- Acta Physica Polonica A 107, 396-399 (2005)

28. Noise in Shottky-barrier diodes: from static to large-signal operation

- P. Shiktorov, S. Pérez, T. González, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 322-336. (2004)

27. Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures

- D. Persano Adorno, M. Zarcone, G. Ferrante, P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Physica Satus Solidi (c) 1, 1367-1376 (2004)

26. Monte Carlo simulation of Schottky diodes operating under TeraHertz cyclostationary conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- IEEE Electron Device Letters 25, 1-3 (2004)

25. A Monte Carlo approach to current fluctuations under high-frequency large-amplitude cyclostationary conditions

- L. Varani, C. Palermo, J. C. Vaissiere, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, S. Pérez and T. González
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 81-84 (2003)

24. Monte Carlo simulation of large-signal noise in Schottky diodes

- S. Pérez, T. González, E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 645-649. (2003)

23. Resonant-like enhancement of hot-carrier noise under high-frequency large-signal operation

- E. Starikov, P. Shiktorov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 599-602. (2003)

22. Microscopic investigation of large-signal noise in semiconductor materials and devices (artículo invitado)

- T. González, S. Pérez, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 252-266 (2003)

21. Monte Carlo simulation of electronic noise under large-signal operation

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 504-511. (2003)

20. Monte Carlo simulation of noise in electronic devices: limitations and perspectives (artículo invitado)

- T. González, J. Mateos, M. J. Martín-Martínez, S. Pérez, R. Rengel, B. G. Vasallo and D. Pardo
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 496-503. (2003)

19. High order harmonics extraction for THz radiation generation in wide band gap semiconductors

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, S. Pérez and T. González
- Proceedings of the 26th International Conference on the Physics of Semiconductors, IOP Conference Series 171, 2003, M1.2 (1-6) (2003)

18. Noise analysis of semiconductor submicron structures operating under large-signal regime

- S. Pérez and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-08(1-4) (2003)

17. Monte Carlo simulation of electronic noise in semiconductor materials and devices operating under cyclostationary conditions

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, S. Pérez and T. González
- Journal of Computational Electronics 2, 455-458 (2003)

16. Monte Carlo simulation of threshold bandwidth for high-order harmonics extraction

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- IEEE Transactions on Electron Devices 50, 1171-1178 (2003)

15. Upconversion of partition noise in semiconductors operating under periodic large-signal conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
- Physical Review B 67, 165201 [1-10] (2003)

14. Upconversion of intergroup hot-carrier noise in semiconductors operating under periodic large-signal conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
- Fluctuation and Noise Letters 3, L51-L61 (2003)

13. Monte Carlo analysis of voltage noise in submicron semiconductor structures under large-signal regime

- S. Pérez and T. González
- Semiconductor Science and Technology 17, 696-700 (2002)

12. Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions

- M.J. Martín-Martínez, S. Pérez, D. Pardo and T. González
- Physica B 314, 381-385 (2002)

11. Microscopic analysis of generation-recombination noise upconversion in semiconductors

- S. Pérez, T. González, S. L. Delage, and J. Obregon
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 265-268 (2001)

10. Monte Carlo analysis of the noise behavior in Si BJT’s and SiGe HBT’s at RF frequencies

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Journal of Applied Physics 90, 1582-1588 (2001)

9. High Injection Effects on Noise Characteristics of Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Microelectronics Reliability 41, 847-854 (2001)

8. Monte Carlo analysis of the influence of dc conditions on the upconversion of generation-recombination noise in semiconductors

- S. Pérez, T. González, S. Delage, and J. Obregon
- Semiconductor Science and Technology 16, L8-L11 (2001)

7. Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields

- S. Pérez, T. González, S. Delage, and J. Obregon
- Journal of Applied Physics 88, 800-807 (2000)

6. InGaP/GaAs HBT: Application to the design of ultra-low phase noise oscillators

- S. Pérez, D. Floriot, P.M.Gutiérrez, J. Obregon, and S. Delage
- Actas de la Conferencia de Dispositivos Electrónicos, 1999, pp. 61-64. (1999)

5. High Added Power InGaP/GaAs HBT Amplifier for Ku-band

- S. Pérez, D. Floriot, P.M.Gutiérrez, J. Obregon, and S. Delage
- Proceedings of the XIV Design of Circuits and Integrated Systems, 1999, pp. 45-49. (1999)

4. Optimization of InGaP/GaAs HBTs Operation in Added Power for Communications Systems

- S. Pérez, D. Floriot, P. M.Gutiérrez, J. Obregon, and S. Delage
- Proceedings of the XIII Design of Circuits and Integrated Systems, 1998, pp. 582-585 . (1998)

3. Extremely low noise InGaP/GaAs HBT oscillator at C-band

- S. Pérez, D. Floriot, Ph. Maurin, Ph. Bouquet, P. M. Gutiérrez, J. Obregon and S. Delage
- Electronics Leters 34, 813-815 (1998)

2. A GaInP/GaAs HBT Dielectric Resonator Oscillator at 6.7 GHz

- S. Pérez, D. Floriot, Ph. Maurin, Ph. Bouquet, P.M.Gutiérrez, J. Obregon, and S. Delage
- Proceedings of the XII Design of Circuits and Integrated Systems, 1997, pp. 447-450 (1997)

1. Conception d’un oscillateur H.B.T. GaInP/GaAs très faible bruit de phase -124 dBc/Hz à 10 kHz en bande C

- P. Maurin. S. Pérez, P. Buquet, D. Floriot, J. Obregon, and S. Delage
- Actes de la Conference des Dixièmes Journées Nationales Microondes, 1997, pp. 260-261 (1997)