About

Javier Mateos (born 1970), Full Professor in the Department of Applied Physics of the University of Salamanca (USAL) since February de 2017, is with the Research Group on High- Frequency Nanoelectronic Devices since 1993.

He is author or co-author of more than 140 JCR papers, more than 100 contributions to conference proceedings with peer-review, 1 book chapter and is editor of 2 books (WoS h-index=26, Google Scholar 30). He presented more than 200 contributions (30 invited) in International conferences and has participated in more than 40 research projects (being IP of 13 of them) funded by diferent institutions, with a significant presence in international projects: 2 EU-funded projects (ROOTHz within FP7 and NANO-TERA within FP3), 3 funded by NATO, 6 Acciones Integradas (4 with France and 2 with Italy) and several international Research networks (EUROSOI, Phantoms, GDR THz, GDRE, nanoICT).

He was coordinator of the EU project ROOTHz (2011-2013), aiming to the fabrication of emitters and detectors in the THz range with nanodevices based on narrow and wide bandgap semiconductors (www.roothz.eu). As a result of that project two patents were filed, with him as co-inventor. Since 2016 he is Associate Editor of one of the most prestigious journals in the field of semiconductor devices, IEEE Transactions on Electron Devices.

Updated information at https://produccioncientifica.usal.es/investigadores/56427/detalle

Google Scholar: https://scholar.google.com/citations?user=EktM02IAAAAJ

Articles Published

239. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

- E. Pérez-Martín, T. González, I. Íñiguez-de-la-Torre, and J. Mateos
- Journal of Applied Physics 135, 044502 (2024)

238. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

- B. Orfao, M. Abou Daher, R. A. Peña, B. G. Vasallo, S. Pérez, I. Íñiguez-de-la-Torre, G. Paz-Martínez, J. Mateos, Y. Roelens, M. Zaknoune, and T. González
- Journal of Applied Physics 135, 014501 (2024)

237. A closed-form expression for the frequency dependent microwave responsivity of transistors based on the I-V curve and S-parameters

- G. Paz-Martínez, P. Artillan, J. Mateos, E. Rochefeuille, T. González, and I. Íñiguez-de-la-Torre
- IEEE Transactions on Microwave Theory and Techniques 72, 415-420 (2024)

236. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, P. Artillan, H. Sánchez-Martín, S. García-Sánchez, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques (2023)

235. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

- I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, and J. Mateos
- Applied Physics Letters 123, 123503 (2023)

234. Low temperature memory effects in AlGaN/GaN nanochannels

- H. Sánchez-Martín, E. Pérez-Martín, G. Paz-Martínez, J. Mateos, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 123, 103505 (2023)

233. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

- E. Pérez-Martín, H. Sánchez-Martín, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 34, 325201 (2023)

232. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

- S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 3447 (2023)

231. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

- S. García-Sánchez, R. Rengel, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 2981 (2023)

230. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

- T. Gonzalez, B. Orfao, S. Pérez, J. Mateos, and B. G. Vasallo
- Applied Physics Express 16, 024003 (2023)

229. Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques 71, 3126 (2023)

228. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

- G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, and J. Mateos
- Journal of Applied Physics 132, 134501 (2022)

227. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

- B. Orfao, G. Di Gioia, B. G. Vasallo, S. Pérez, J. Mateos, Y. Roelens, E. Frayssinet, Y. Cordier, M. Zaknoune, and T. González
- Journal of Applied Physics 132, 044502 (2022)

226. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

- H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
- Solid-State Electronics 193, 108289 (2022)

225. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos and T. González
- Sensors 22, 1515 (2022)

224. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 69, 514 (2022)

223. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, S. Pérez, T. González, and J. Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455727 (2021)

222. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

- E. Pérez-Martín, I. Íñiguez-de-la-Torre, C. Gaquière, T. González, and J. Mateos
- Journal of Applied Physics 10, 104501 (2021)

221. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

- B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
- IEEE Transactions on Electron Devices 68, 4296 (2021)

220. Temperature behavior of Gunn oscillations in planar InGaAs diodes

- J. A. Novoa-López, G. Paz-Martínez, H. Sánchez-Martín, Y. Lechaux, I. Íñiguez-de-la-Torre, T. González, and J. Mateos
- IEEE Electron Device Letters 42, 1136 (2021)

219. Influence of laser modulation frequency on the performance of terahertz photoconductive switches on semi-insulating GaAs exhibiting negative differential conductance

- G. Paz-Martinez, C. G. Treviño-Palacios, J. Molina-Reyes, A. Romero-Morán, E. Cervantes-García, J. Mateos, and T. González
- IEEE Transactions on Terahertz Science and Technology 11, 591 (2021)

218. Non-linear thermal resistance model for the simulation of high power GaN-based devices

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
- Semiconductor Science and Technology 36, 055002 (2021)

217. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

- E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
- Microelectronics Reliability 114, 113806 (2020)

216. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

- Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
- Smiconductor Science and Technology 35, 115009 (2020)

215. Noise and charge discreteness as ultimate limit for the T Hz operation of ultra‑small electronic devices

- E. Colomés, J. Mateos, T. González, and X. O riols
- Scientific Reports 10, 15990 (2020)

214. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
- IEEE Transactions on Electron Devices 9, 3530 (2020)

213. Interplay between channel and shot noise at the onset of spiking activity in neural membranes

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 19, 792 (2020)

212. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

- E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 31, 405204 (2020)

211. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

- H. Sánchez-Martín, S. Sánchez-Martín, I. Íñiguez-de-la-Torre , S. Pérez, J. A. Novoa , G. Ducournau, B. Grimbert, C. Gaquière, T. González and J. Mateos
- Semiconductor Science and Technology 33, 095016 (2018)

210. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

- H. Sánchez-Martín, J. Mateos, J. A. Novoa, J. A. Delgado-Notario, Y. M. Meziani, S. Pérez, H. Theveneau, G. Ducournau, C. Gaquière, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 113, 043504 (2018)

209. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

- B. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos
- Journal of Applied Physics 123, 034501 [1-5] (2018)

208. Stochastic model for action potential simulation including ion shot noise

- B. G. Vasallo, F. Galán-Prado, J. Mateos, T. González, S. Hedayat, V. Hoel, and A. Cappy
- Journal of Computational Electronics 16, 419-430 (2017)

207. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

- H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Semiconductor Science and Technology 32, 035011 [1-8] (2017)

206. Design and analysis of high performance ballistic nanodevice-based sequential circuits using Monte Carlo and Verilog AMS simulations

- P. Marthi, N. Hossain, H. Wang, J.-F. Millithaler, M. Margala, I. Iñiguez-de-la-Torre, J. Mateos, and T. González
- IEEE Transactions on Circuits and Systems I: Regular Papers 63, 2236-2244 (2016)

205. Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes

- D. Moro-Melgar, A. Maestrini, J. Treuttel, L. Gatilova, T. González, B. G. Vasallo, and J. Mateos
- IEEE Transactions on Electron Devices 63, 3900-3907 (2016)

204. Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
- Semiconductor Science and Technology 31, 065005 [1-9] (2016)

203. A 520-620 GHz Schottky receiver front-end for Planetary Science and Remote Sensing with 1070K-1500K DSB noise temperature at Room Temperature

- J. Treuttel, L. Gatilova, A. Maestrini, D. Moro-Melgar, F. Yang, F. Tamazouzt, T. Vacelet, Y. Jin, A. Cavanna, J. Mateos, A. Feret, C. Chaumont, and C. Goldstein
- IEEE Transactions on Terahertz Science and Technology 6, 148-155 (2016)

202. Room temperature direct and heterodyne detection of 0.28 to 0.69 THz waves based on GaN 2DEG unipolar nanochannels

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González.
- IEEE Transactions on Electron Devices 63, 353- 359 (2016)

201. Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288553 (2015)

200. Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

- Ó. García-Pérez, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288539 (2015)

199. Time-dependent physics of double-tunnel junctions

- V. Talbo, J. Mateos, S.Retailleau, P. Dollfus and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087477 (2015)

198. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087474 (2015)

197. Anomalous low-frequency noise Increase at the onset of oscillations in Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087504 (2015)

196. Optimization of ballistic deflection transistors by Monte Carlo simulations

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Journal of Physics: Conference Series 647, 012066 [1-4] (2015)

195. Improvement of interfacial and electrical properties of Al2O3/ n‑Ga0.47In0.53As for III-V impact ionization MOSFETs

- Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T. González, B. G. Vasallo, and N. Wichmann
- Journal of Physics: Conference Series 647, 012062 [1-4] (2015)

194. Shot-noise suppression effects in InGaAs planar diodes at room temperature

- Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- Journal of Physics: Conference Series 647, 012061 [1-4] (2015)

193. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

- V. Talbo, J. Mateos, T. González, Y. Lechaux, N. Wichmann, S. Bollaert and B. G. Vasallo
- Journal of Physics: Conference Series 647, 012056 [1-4] (2015)

192. Temperature and surface traps influence on the THz emission from InGaAs diodes

- A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
- Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

191. Ultra-high responsivity of optically-active semiconducting asymmetric nano-channel diodes

- Y. Akbas, A. Stern, L. Q. Zhang, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, J. Mateos, T. González, G. Wicks, and R. Sobolewski
- Journal of Physics: Conference Series 647, 012013 [1-4] (2015)

190. 0.69 THz room temperature terahertz heterodyne detection using unipolar nanodiodes

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González
- Journal of Physics: Conference Series 647, 012006 (2015)

189. Review of electron transport properties in bul InGaAs and InAs at room temperature

- S. Karishy, P. Ziadé, G. Sabatini, H. Marinchio, C. Palermo, L. Varani, J. Mateos, and T. Gonzalez
- Lithuanian Journal of Physics 55, 305-314 (2015)

188. Study of surface charges in ballistic deflection transistors

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Nanotechnology 26, 485202 [1-6] (2015)

187. Time-dependent shot noise in multi-level quantum dot-based single-electron devices

- V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
- Semiconductor Science and Technology 30, 055002 [1-7] (2015)

186. Phonon balck-body radiation limit for heat dissipation in electronics

- J. Schleeh, J. Mateos, I. Íñiguez-de-la-Torre, N. Wadefalk, P. A. Nilsson, J. Grahn and A. J. Minnich
- Nature Materials 14, 187-192 (2015) (2015)

185. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

- A. Westlund, P. Sangaré, G. Ducournau, I. Iñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
- Solid-State Electronics 104, 79-85 (2015)

184. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

- S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
- Semiconductor Science and Technology 30, 035001 [1-8] (2015)

183. Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. Gonzalez and J. Mateos
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865816 (2014)

182. Frequency-dependent shot noise in single-electron devices

- V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865843 (2014)

181. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs HEMTs

- D. Moro-Melgar, J. Mateos, T. González and B. G. Vasallo
- Journal of Applied Physics 116, 234502 [1-7] (2014)

180. Operation of GaN planar nanodiodes as THz detectors and mixers

- I. Iñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos
- IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)

179. Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos
- Semiconductor Science and Technology 29, 115032 [1-9] (2014)

178. Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

- O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- Applied Physics Letters 105, 113502 [1-4] (2014)

177. On the effect of d-doping in self-switching diodes

- A. Westlund, I. Iñiguez-de-la-Torre, P. A. Nilsson, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière, L. Desplanque, X. Wallart, and J. Grahn
- Applied Physics Letters 105, 093505 [1-5] (2014)

176. Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

- J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos
- Applied Physics Letters 104, 073509 [1-4] (2014)

175. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

174. Ballistic deflection transistor: geometry dependence and Boolean operations

- I. Íñiguez‐de‐la‐Torre, V. Kaushal, M. Margala, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 187-190. ISBN: 978-1-4673-4666-5 (2013)

173. Time‐domain Monte Carlo simulations of resonant‐circuit operation of GaN Gunn diodes

- S. García, B. G. Vasallo, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 79-82. ISBN: 978-1-4673-4666-5 (2013)

172. Monte Carlo analysis of thermal effects in Self‐Switching Diodes

- J. F. Millithaler, I. Iñiguez‐de‐la‐Torre, T. González and J. Mateos
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 45-48. ISBN: 978-1-4673-4666-5 (2013)

171. Accurate predictions of Terahertz noise in ultra-small quantum devices: A limiting factor for their commercial viability?

- X. Oriols, A. Benali, S. M. Yaro, G. Albareda, F. L. Traversa, J. Mateos and T. González
- 22nd International Conference on Noise and Fluctuations, 2013, pp. 1-4. ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578886 (2013)

170. Noise Equivalent Power in Terahertz detectors based on semiconductor nanochannels

- J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González and J. Mateos
- 22nd International Conference on Noise and Fluctuations, 2013, pp. 1-4. ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578885 (2013)

169. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. ISBN: 97888970100-2 (2013)

168. Nonlinear nanochannels for room temperature terahertz heterodyne detection

- J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangaré, B. Grimbert, M. Faucher, G. Ducournau, C. Gaquière, I. Iñiguez-de-la-Torre, J. Mateos and T. Gonzalez
- Semiconductor Science and Technology 28, 125024 [1-6] (2013)

167. Cryogenic performance of low-noise InP HEMTs: A Monte Carlo study

- H. Rodilla, J. Schleeh, P. A. Nilsson,N. Wadefalk, J. Mateos, and J. Grahn
- IEEE Transactions on Electron Devices 60, 1625-1631 (2013)

166. Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length

- S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- Journal of Applied Physics 114, 074503 [1-9] (2013)

165. Experimental demonstration of direct terahertz detection at room temperature in AlGaN/GaN asymmetric nanochannels

- P. Sangaré, G. Ducournau, B. Grimbert, V. Brandli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
- Journal of Applied Physics 113, 034305 [1-6] (2013)

164. Analysis of nonharmonic oscillations in Schottky diodes

- D. Pardo, J. Grajal, S. Pérez, T. González and J. Mateos
- Journal of Applied Physics 112, 053703 [1-9] (2012)

163. Effect of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors

- V. Kaushal, I. Íñiguez-de-la-Torre, T. González, J. Mateos, B. Lee, V. Misra, and M. Margala
- IEEE Electron Device Letters 33, 1120-1122 (2012)

162. Searching for THz Gunn oscillations in GaN planar nanodiodes

- A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangaré, G. Ducournau, and C. Gaquière
- Journal of Applied Physics 11, 113705 [1-9] (2012)

161. Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Semiconductor Science and Technology 27, 065018 [1-5] (2012)

160. Monte Carlo studies of the intrinsic time-domain response ofnanoscale three-branch junctions

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, T. González, H. Irie, and Roman Sobolewski
- Journal of Applied Physics 111, 084511 [1-4] and Virtual Journal of Nanoscale Science & Technology 25 [20] (2012)

159. Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 27, 015008 [1-6] (2012)

158. Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

- I. Íñiguez-de-la-Torre, T. González, H. Rodilla, B. G. Vasallo and J. Mateos
- APPLICATIONS OF MONTE CARLO METHOD IN SCIENCE AND ENGINEERING, pp. 803-828 (2011) Edited by: S. Mark and S. Mordechai. InTech, Rijeka (Croacia) (2011)

157. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. (2011)

156. Wide band gap self-switching nanodevices for THz applications at room temperature

- C. Gaquiere, G. Ducournau, P. Sangaré, B. Grimbert, M. Faucher, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, T. González and J. Mateos
- Proceedings of the 41st European Microwave Conference, 2011, pp. 1150-1152. (2011)

155. Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

- H. Rodilla, B. G. Vasallo, J. Mateos, G. Moschetti, J. Grahn, and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 188-191 (2011)

154. Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

- D. Pardo, S. Pérez, J. Grajal, J. Mateos and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 110-113 (2011)

153. Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications

- D. Pardo, J. Grajal de la Fuente, S. Pérez, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #95. (2011)

152. Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

- B. García, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #93. (2011)

151. Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J.n Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #78. (2011)

150. OPTTR induced current oscillations in GaN diodes Monte Carlo simulations

- A. Íñiguez-de-la-Torre, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #77 (2011)

149. Toward THz Gunn Oscillations in Planar GaN Nanodiodes (artículo invitado)

- A. Íñiguez-de-la-Torre, J. Mateos, I. Íñiguez-de-la-Torre, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #53. (2011)

148. Exploring digital logic design using nano-devices through Monte Carlo simulations

- I. Íñiguez-de-la-Torre, S. Purohit, V. Kaushal, M. Margala, M. Gong, R. Sobolewski, D. Wolpert, P. Ampadu, T. González, and J. Mateos
- IEEE Transactions on Nanotechnology 10, 1337-1346 (2011)

147. Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

- I. Íñiguez-de-la-Torre, J. Mateos, Y. Roelens, C. Gardès, S. Bollaert and T. González
- Nanotechnology 22, 445203 [1-5] (2011)

146. Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study

- A. Iñiguez-de-la-Torre, I. Iñiguez-de-la-Torre, J. Mateos and T. González
- Applied Physics Letters 99, 062109 [1-3] and Virtual Journal of Nanoscale Science & Technology 24 [8] (2011)

145. Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

- D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González
- Semiconductor Science and Technology 26, 055023 [1-11] (2011)

144. Monte Carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, E. Lefebvre, G. Moschetti, J. Grahn, and J. Mateos
- Acta Physica Polonica A 119, 222-224 (2011)

143. Monte Carlo analysis of the dynamic behavior of InAlAs/InGaAs velocity modulation transistors: a geometrical optimization

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Acta Physica Polonica A 119, 193-195 (2011)

142. Submillimeter-wave oscillations in recessed InGaAs/InAlAs heterostructures: origin and tuneability

- S. Pérez, J. Mateos, and T. González
- Acta Physica Polonica A 119, 111-113 (2011)

141. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 26, 025004 [1-7] (2011)

140. Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors

- J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González and S. Pérez
- Solid-State Electronics 56, 116-119 (2011)

139. Sub-Thz frequency analysis in nano-scale devices at room temperature

- I. Iñiguez-de-la-Torre, V. Kaushal, M. Margala, T. González and J. Mateos
- Proceedings of the Device Research Conference 2010 (DRC 2010), DOI:10.1109/DRC.2010.5551864, 2010 (2010)

138. THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, A. M. Song and J. Mateos
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 369-372 (2010)

137. Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

- H. Rodilla, T. González, M. Malmkvist, E. Lefebvre, G. Moschetti, J. Grahn and J. Mateos
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 333-336 (2010)

136. DC and RF cryogenic behaviour of InAs/AlSb HEMTs

- G. Moschetti, P.-A. Nilsson, L. Desplanque, X. Wallart, H. Rodilla, J. Mateos and J. Grahn
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 321-324. (2010)

135. Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Journal of Applied Physics 108, 094505 [1-5] (2010)

134. Three-Terminal Junctions operating as mixers, frequency doublers and detectors. A broad-band frequency numerical and experimental study at room temperature

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Semiconductor Science and Technology 25, 125013 [1-14] (2010)

133. Monte Carlo study of the static and dynamic performance of a 100 nm-gate InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 57, 2572-2578 (2010)

132. A generalized drift-diffusion model for rectifying Schottky contact simulation

- F. L. Traversa, F. Bertazzi, F. Bonani, S. Donati, G. Ghione, S. Pérez, J. Mateos and T. González
- IEEE Transactions on Electron Devices 57, 1539-1547 (2010)

131. Enhanced Terahertz detection in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González and A. M. Song
- International Journal of Numerical Modeling 23, 301-314 (2010)

130. Terahertz current oscillation assisted by optical phonon emission in Gan n+nn+ diodes: Monte Carlo simulations

- A. Iñiguez-de-la-Torre, J. Mateos and T. González
- Journal of Applied Physics 107, 053707 [1-6] (2010)

129. Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regime

- G. Sabatini, H. Marinchio, L. Varani, C. Palermo, J. F. Millithaler, L. Reggiani, H. Rodilla, T. Gonzàlez, S. Pérez and J. Mateos
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 345-348 (2009)

128. Noise enhanced THz rectification tuned by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 229-232 (2009)

127. Gunn oscillations in asymmetric nanodiodes based on narrow and wide band-gap semiconductors: Monte Carlo simulations

- T. González, I. Íñiguez-de-la-Torre, D. Pardo, J. Mateos, and A. M. Song
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Tu5, pp. 20-23 (2009)

126. Monte Carlo simulation of InAs/AlSb HEMTs

- H. Rodilla, J. Mateos, T. González, M. Malmkvist, Eric Lefebvre and J. Grahn
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Mon7, pp. 10-13 (2009)

125. Tunable Terahertz resonance in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D., T. González and A. M. Song
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 463-466 (2009)

124. Frequency response of T-shaped three branch junctions as mixers and detectors

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, J. Mateos, Y. Roelens and S. Bollaert
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 168-171. (2009)

123. Monte Carlo simulation of Sb-based heterostructures

- H. Rodilla, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 152-155. (2009)

122. Monte Carlo study of an InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 128-131. (2009)

121. Plasmonic noise in Si and InGaAs semiconductor nanolayers

- J. Pousset, J.-F. Millithaler, L. Reggiani, G. Sabatini, C. Palermo, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, A. Bournel and P. Dollfus
- Journal of Physics: Conference Series 193, 012091 [1-4] (2009)

120. On the geometrical tunabililty of THz Gunn-like oscillations in InGaAs/InAlAs slot-diodes

- S. Pérez, J. Mateos, D. Pardo and T. González
- Journal of Physics: Conference Series 193, 012090 [1-4] (2009)

119. Terahertz tuneable detection in Self-Switching Diodes based on high mobility semiconductors: InGaAs, InAs and InSb

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Journal of Physics: Conference Series 193, 012082 [1-4] (2009)

118. Monte Carlo simulation of ballistic transport in high-mobility channels

- G. Sabatini, H. Marinchio, C. Palermo, L. Varani, T. Daoud, R. Teissier, H. Rodilla, T. González, and J. Mateos
- Journal of Physics: Conference Series 193, 012035 [1-4] (2009)

117. Current oscillations excited by optical phonon emission in GaN n+nn+ diodes: Monte Carlo simulations

- A. Iñiguez-de-la Torre, T. González and J. Mateos
- Journal of Physics: Conference Series 193, 012023 [1-4] (2009)

116. RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Journal of Physics: Conference Series 193, 012021 [1-4] (2009)

115. Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes

- T. González, I. Iñiguez-de-la Torre, D. Pardo, J. Mateos and A. M. Song
- Journal of Physics: Conference Series 193, 012018 [1-4] (2009)

114. Monte Carlo investigation of TeraHertz plasma oscillations in gated ultrathin channel of n-InGaAs

- J. F. Millithaler, J. Pousset, L. Reggiani, P. Ziade, H. Marinchio, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Applied Physics Letters 95, 152102 [1-3] (2009)

113. High-mobility heterostructures based on InAs and InSb: A Monte Carlo study

- H. Rodilla, T. González, D. Pardo, and J. Mateos
- Journal of Applied Physics 105, 113705 [1-6] (2009)

112. Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens , S. Bollaert and J. Mateos
- Journal of Applied Physics 105, 094504 [1-7] and Virtual Journal of Nanoscale Science & Technology 19 [20] (2009)

111. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

- N. Wichmann, B. G. Vasallo, S. Boolaert, Y. Roelens, X. Wallart, A. Cappy, T. González, D. Pardo and J. Mateos
- Applied Physics Letters 94, 103504 [1-3] (2009)

110. Plasmonic noise in nanometric semiconductor layers

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: Theory and Experiment 2009, P02030 [1-12] (2009)

109. Noise and terahertz rectification linked by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la Torre, J. Mateos, D. Pardo, A. M. Song and T. González
- Applied Physics Letters 94, 093512 [1-3] (2009)

108. A Monte Carlo investigation of plasmonic noise in nanometric InGaAs channels

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: theory and experiment 2009, P01040 [1-12] (2009)

107. Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- Proceedings of the 2008 International Conference on Indium Phosphide and Related Materials (IPRM 08), IEEE Catalog CFP08IIP-CDR, 2008, p89 (2008)

106. Comparison between the noise performance of double- and single-gate InP-based HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 55, 1535-1540 (2008)

105. Ballistic nanodevices for high-frequency applications

- C. Gardes, Y. Roelens, S. Bollaert, A. Cappy, J.S. Galloo, X. Wallart, C. Gaquiere, A. Curutchet, J. Mateos, T. González, B.G. Vasallo, L. Bednarz, and I. Huynen
- International Journal of Nanotechnology 5, 796-808 (2008)

104. THz Gunn-like oscillations in InGaAs/InAlAs planar diodes

- S. Pérez, T. González, D. Pardo and J. Mateos
- Journal of Applied Physics 103, 094516 [1-5] and Virtual Journal of Ultrafast Science 7 [6] (2008)

103. Monte Carlo analysis of noise spectra in self-switching nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 103, 024502 [1-6] and Virtual Journal of Nanoscale Science & Technology 17 [5] (2008)

102. Excitation of millimeter-wave oscillations in InAlAs/InGaAs heterostructures

- S. Pérez, J. Mateos, D. Pardo and T. González
- Physica Status Solidi (c) 5, 146-149 (2008)

101. Monte Carlo simulation of surface charge effects in T-branch nanojunctions

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens and A. Cappy
- Physica Status Solidi (c) 5, 94-97 (2008)

100. Monte Carlo analysis of memory effects in nano-scale rectifying diodes

- I. Iñiguez-de-la-Torre, T. González, D. Pardo and J. Mateos
- Physica Status Solidi (c) 5, 82-85 (2008)

99. Kinetic and partial-differential equation modeling of noise in Schottky barrier diodes: a comparison

- F. L.Traversa, F. Bertazzi, F. Bonani, G. Ghione, S.Pérez, J. Mateos, T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 321-324 (2007)

98. Microscopic analysis of noise in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 317-320 (2007)

97. Noise anaysis of plasma wave oscillations in InGaAs channels

- J. Pousset, J. F. Millithaler, C. Palermo, G. Sabatini, H. Marinchio, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, E. Starikov, P. Shiktorov, V. Gruzhinskis and L. Reggiani
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 201-204 (2007)

96. Monte Carlo investigation of THz oscillations in InAlAs/InGaAs heterostructures by means of current and voltage noise spectra

- S. Pérez, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 197-200 (2007)

95. Noise behavior of InP-based double-gate and standard HEMTs: a comparison

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 167-170 (2007)

94. Three-terminal ballistic junctions with Schottky gates

- C. Gardès, Y. Roelens, S. Bollaert, A. Cappy, X. Wallart, J. Mateos, T. González and B. G. Vasallo
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 153-156 (2007)

93. InAlAs/InGaAs heterostructures for THz generation

- S. Pérez, J. Mateos, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 127-130 (2007)

92. Monte Carlo comparison between InAlAs/InGaAs double gate and standard HEMTs

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 80-83 (2007)

91. Surface charge effects in ballistic T-branch nanojunctions

- I. Íñiguez de la Torre, J. Mateos, T. González, D. Pardo, S. Bollaert, Y. Roelens and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 48-51 (2007)

90. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 54, 2815-2822 (2007)

89. Hysteresis phenomena in nano-scale rectifying diodes. A Monte Carlo interpretation in terms of surface effects

- I. Íñiguez de la Torre, T. González, D. Pardo and J. Mateos
- Applied Physics Letters 91, 063504 and Virtual Journal of Nanoscale Science & Technology 16 [8] (2007)

88. Ballistic nanodevices. A new concept in electronic design

- Y. Roelens, J. Mateos, S. Bollaert, J. S. Galloo, B. G. Vasallo, D. Pardo and T. González
- Revue E tijdschrift 123, 34-39 (2007)

87. Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

- I. Iñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- Semiconductor Science and Technology 22, 663-670 (2007)

86. Ballistic nanodevices for high frequency applications

- S. Bollaert, A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart, J. Mateos, T. González, B. G. Vasallo, B. Hackens, L. Bednarz and I. Huynen
- Thin Solid Films 515, 4321-4326 (2007)

85. Monte Carlo comparison between InP-based double-gate and standard HEMTs

- B.G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
- Proceedings of the 1st European Microwave Integrated Circuits Conference, IEEE Catalog 06EX1410, 2006, pp. 304-307. (CD) (2006)

84. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 109-113 (2006)

83. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 291-294 (2006)

82. Negative differential transconductance and nonreciprocal effects in Y-branch nanojunction. High-frequency analysis

- L. Bednarz, Rashmi, P. Simon, I. Huynen, T. González and J. Mateos
- IEEE Transactions on Nanotechnology 5, 750-757 (2006)

81. Numerical modelling of TeraHertz electronic devices

- L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissiere, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Pérez, D. Pardo and T. González
- Journal of Computational Electronics 5, 71-77 (2006)

80. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

- R. Rengel, T. González, J. Mateos, D. Pardo, G. Dambrine, F. Danneville, J. P. Raskin and M. J. Martín
- IEEE Transactions on Electron Devices 53, 523-532 (2006)

79. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

78. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

77. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

- R. Rengel, J. Mateos, T. González, D. Pardo, G. Dambrine, F. Danneville and M. J. Martín
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.497-502 (2005)

76. Terahertz emission from nanometric HEMTs analyzed by noise spectra

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 335-338. (2005)

75. InP based ballistic nanodevices (artículo invitado)

- A. Cappy, J. S. Galloo, S. Bollaert, Y. Roelens, J. Mateos, T. González and W. Knap
- Proceedings of the 2005 International Conference on Indium Phosphide and Related Materials (IPRM 05), IEEE Catalog 05CH37633C, 2005, p217. (CD) (2005)

74. Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-024(1-4) (2005)

73. Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Semiconductor Science and Technology 20, 956-960 (2005)

72. Microwave detection at 110 GHz by nanowires with broken symmetry

- C. Balocco, A. M. Song, M. Aberg, A. Forchel, T. González, J. Mateos, I. Maximov, M. Missous, A. A. Rezazadeh, J. Saijets, L. Samuelson, D. Wallin, K. Williams, L. Worschech and H. Q. Xu
- Nano Letters 5, 1423-1427 (2005)

71. Voltage tunable terahertz emission from ballistic nanometer InGaAs/AlInAs transistor

- J. Lusakowski, W.Knap, N. Dyakonova, L. Varani, J. Mateos, T. Gonzalez, T. Parenty, S. Bollaert, A. Cappy and K. Karpierz
- Journal of Applied Physics 97, 064307 [1-7] and Virtual Journal of Nanoscale Science & Technology 11 [11] (2005)

70. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381 (2004)

69. Nonlocal effects and transfer fields for electronic noise in small devices

- L. Varani, J. C. Vaissiere, P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 1-15. (2004)

68. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381. (2004)

67. Design optimization of AlInAs/GaInAs HEMTs for low-noise applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 1228-1233 (2004)

66. Kink-effect related noise in short-channel InAlAs/InGaAs High Electron Mobility Transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 95, 8271-8274 (2004)

65. Design optimization of AlInAs/GaInAs HEMTs for high-frequency applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 521-528 (2004)

64. Quantum transport under high-frequency conditions: application to bound state resonant tunnelling transistors

- X. Oriols, A. Alarcón and J. Mateos
- Semiconductor Science and Technology 19, L69-L73 (2004)

63. Monte Carlo analysis of four-terminal ballistic rectifiers

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Nanotechnology 15, S250-S253 (2004)

62. Room temperature nonlinear transport in ballistic nanodevices

- T. Gonzalez, B. G. Vasallo, D. Pardo and J. Mateos
- Semiconductor Science and Technology 19, S125-S127 (2004)

61. Energy correlations and Coulomb suppression of shot noise in ballistic conductors

- T. González, J. Mateos, D. Pardo, G. Gomila, I. R. Cantalapiedra and L. Reggiani
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 93-96 (2003)

60. Microscopic analysis of the high-frequency noise behavior of fabricated Fully-Depleted SOI MOSFETs

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 585-588. (2003)

59. Noise associated with the kink effect in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 357-360. (2003)

58. Kink-effect-related noise in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 415-423 (2003)

57. High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 379-386. (2003)

56. Monte Carlo analysis of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 03CH37413, 2003, pp. 106-109. (2003)

55. Monte Carlo simulation of noise in electronic devices: limitations and perspectives (artículo invitado)

- T. González, J. Mateos, M. J. Martín-Martínez, S. Pérez, R. Rengel, B. G. Vasallo and D. Pardo
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 496-503. (2003)

54. Microscopic investigation of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, VII-07(1-4) (2003)

53. Dynamic and noise behavior of short-gate FDSOI MOSFETs: numerical and experimental analysis

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-07(1-4) (2003)

52. Monte Carlo study of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 94, 4096-4101 (2003)

51. The role of energy correlations on Coulomb suppression of shot noise in ballistic conductors

- T. González, J. Mateos, D. Pardo, G. Gomila, I. R. Cantalapiedra and L. Reggiani
- Physical Review B 68, 075309 [1-6] and Virtual Journal of Nanoscale Science & Technology 8 [8] (2003)

50. 0.12 µm gate In0.52Al0.48As/In0.53Ga0.47As HEMTs on transferred substrate

- X. Wallart, S. Bollaert, S. Lepilliet, A. Cappy, E. Jalaguier, and J. Mateos
- Proceedings of the Twenty-Eighth International Symposium on Compound Semiconductors, IOP conference series 170, 2002 (2002)

49. Numerical and experimental study of a 0.25 µm Fully-Depleted Silicon-on-Insulator MOSFET: static and dynamic RF behaviour

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville, and J.-P. Raskin
- Semiconductor Science and Technology 17, 1149-1156 (2002)

48. Influence of density, occupancy and location of electron traps on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Fluctuation and Noise Letters 2, 243-251 (2002)

47. Influence of trapping-detrapping processes on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Semiconductor Science and Technology 17, 440-445 (2002)

46. RF noise in a short-channel n-MOSFET: a Monte Carlo study

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Material Science Forum 384-385, 155-158 (2002)

45. Fabrication of a 0.12 µm gate In0.52Al0.48As/In0.53Ga0.47As HEMT on transferred substrate

- S. Bollaert, X. Wallart, S. Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar and J. Mateos
- GAAS 2001 Proceedings, Microwave Engineering Europe, 2001, pp. 171-173 (2001)

44. Design and realization of sub 100nm gate length HEMTs

- T. Parenty, S. Bollaert, J. Mateos and A. Cappy
- IEEE International Conference on Indium Phosphide and Related Materials, 2001, pp. 626-629. (2001)

43. Microscopic analysis of microwave noise sources in SiGe HBT’s

- M.J. Martín, J. Mateos, D. Pardo, and T. González
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 217-220. (2001)

42. Fermi and Coulomb suppression of shot noise suppression in ballistic diodes

- T. González, J. Mateos, D. Pardo and L. Reggiani
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1343-1344. (2001)

41. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
- VLSI Design 13, 85-90 (2001)

40. Transfer-field methods for electronic noise in submicron semiconductor structures

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- Rivista Nuovo Cimento 24(9), 1-71 (2001)

39. Monte Carlo analysis of dynamic and noise performance of submicron MOSFET at RF and microwave frequencies

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Semiconductor Science and Technology 16, 939-946 (2001)

38. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the Seventh International Workshop on Computational Electronics. (2000)

37. Can the dual property of noise representation be recovered within generalized field methods?

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
- Proceedings of the 2nd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 511, 2000, pp. 527-532 (2000)

36. The puzzle of 1/3 shot-noise suppression in diffusive conductors : universality or numerical coincidence? (artículo invitado)

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Proceedings of the 2nd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 511, 2000, pp. 71-82. (2000)

35. Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Microelectronics Relialibility 40, 1951-1954 (2000)

34. Frontiers in electronic noise: from submicron to nanostructures

- L. Reggiani, C. Pennetta, Gy. Trefán, J.C. Vaissiere, L. Varani, V. Gruzhinskis, A. Reklaitis, P. Shiktorov, E. Starikov, T. González, J. Mateos, D. Pardo and O. M. Bulashenko
- International Journal of High Speed Electronics and Systems 10, 111-117 (2000)

33. Langevin forces and generalized transfer fields for noise modeling of deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- IEEE Transactions on Electron Devices 47, 1992-1998 (2000)

32. Monte Carlo investigation of shot-noise suppression in nondegenerate ballistic and diffusive transport regimes

- L. Reggiani, A. Reklaitis, T. González, J. Mateos, D. Pardo, and O. M. Bulashenko
- Australian Journal of Physics 53, 3-34 (2000)

31. Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Proceedings of the 15th International Conference on Noise in Physical Systems and 1/f fluctuations, Bentham Press, 1999, pp. 134-137. (1999)

30. Coulomb and Fermi suppression of shot noise in ballistic conductors

- T. González, J. Mateos, and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1999, pp. 333-336. (1999)

29. 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Proceedings of the 24th International Conference on the Physics of Semiconductors, 1998, World Scientific, 1999, ISBN 981-02-4030-9 (CD), n. 84. (1999)

28. Generalized transfer fields and Langevin forces for hot-carriers fluctuations in semiconductor submicron devices

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos and D. Pardo
- Physica B 272, 260-262 (1999)

27. Joint effect of Fermi and Coulomb correlations on shot-noise suppression in ballistic conductors

- T. González, J. Mateos, D. Pardo and L. Reggiani
- Physica B 272, 285-287 (1999)

26. Thermal conductivity of nonequilibrium carriers in semiconductors

- L. Varani, P. Gaubert, J. C. Vaissiere, J. P. Nougier, J. Mateos, T. González, D. Pardo, L. Reggiani, E. Starikov, P. Shiktorov, and V. Gruzinskis
- Physica B 272, 247-249 (1999)

25. Shot-noise suppression in nondegenerate semiconductors: the role of an energý-dependent scattering time

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Physica B 272, 282-284 (1999)

24. Injection statistics simulator for dynamic analysis of noise in mesoscopic devices

- T. González, J. Mateos, D. Pardo, L. Varani, and L. Reggiani
- Semiconductor Science and Technology 14, L37-L40 (1999)

23. González et al. Reply:

- T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Physical Review Letters 83, 1268 (1999) (1999)

22. Microscopic analysis of shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko, and L. Reggiani
- Physical Review B 60, 2670-2679 (1999)

21. Towards the Monte Carlo simulation of resonant tunneling diodes using time-dependent wavepackets and Bohm trejectories

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, J. Mateos, T. González, D. Pardo and O. Vanbesien
- Semiconductor Science and Technology 14, 532-542 (1999)

20. Spatio-temporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, J. C. Vaissiere, and J. P. Nougier
- Applied Physics Letters 74, 723-725 (1999)

19. Hydrodynamic modeling of spatial cross-correlation of conduction current fluctuations

- P. Shiktorov, J. C. Vaissiere, L. Varani, J. P. Nougier, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
- Material Science Forum 297-298, 147-150 (1999)

18. Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Semiconductor Science and Technlolgy 13, 714-724 (1998)

17. An acceleration fluctuation scheme for diffusion noise sources within a generalized impedance field method

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, T. González, J. Mateos, D. Pardo and L. Varani
- Physical Review B 57, 11866-11869 (1998)

16. Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

- T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Physical Review Letters 80, 2901-2904 (1998)

15. Bohm trajectories for the Monte Carlo simulation of quantum-based devices

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
- Applied Physics Letters 72, 806-808 (1998)

14. Transfer impedance calculations of electronic noise in two-terminal n+nn+ structures

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos, D. Pardo and L. Reggiani
- Journal of Applied Physics 83, 2052-2066 (1998)

13. Electron-number statistics and shot-noise suppression by Coulomb correlation in nondegenrate ballistic transport

- O. Bulashenko, J. Mateos, D. Pardo, T. González, L. Reggiani and J. M. Rubí
- Physical Review B 57, 1366-1369 (1998)

12. Microscopic description of diffusion noise sources

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, C. Pennetta, T. González, J. Mateos, D. Pardo and L. Varani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 148-151. (1997)

11. Shot-noise suppression in ballistic transport due to long-range Coulomb interaction

- T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 289-292. (1997)

10. Simulación Monte Carlo de dispositivos de efecto túnel mediante trayectorias de Bohm

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, T. González, J. Mateos y D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 463-468. (1997)

9. Simulación microscópica de propiedades de transporte y ruido electrónico en dispositivos semiconductores

- T. González, J. E. Velázquez, M. J. Martín, J. Mateos and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 445-450. (1997)

8. Diffusion coefficient to characterize local noise sources in submicron devices, is it a good magnitude?

- T. González, J. Mateos, D. Pardo, V. Gruzinskis, E. Starikov and P. Shiktorov
- Proceedings of the 1st International Conference on Unsolved Problems of Noise, World Scientific, 1997, pp. 189-193. (1997)

7. Quantum Monte Carlo simulation of tunneling devices using Bohm trajectories

- X. Oriols, J. J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
- Physica Status Solidi (b) 204, 404-407 (1997)

6. On the spectral strength of the noise source entering the transfer impedance method

- P. Shiktorov, V. Gruzinskis, E. Starikov, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
- Applied Physics Letters 71, 3093-3095 (1997)

5. Shot-noise suppression in mesoscopic structures due to long-range Coulomb interaction

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Physica Status Solidi (b) 204, 450-452 (1997)

4. Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

- T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
- Physical Review B 56, 6424-6427 (1997)

3. Noise suppression due to long-range Coulomb interaction: Crossover between diffusive and ballistic transport regimes

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Semiconductor Science and Technology 9, 1053-1056 (1997)

2. Bohm trajectories for the modeling of tunneling devices

- J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos and D. Pardo
- Microelectronic Engineering 36, 125-128 (1997)

1. Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

- P. Tadyszak, F. Daneville, A. Cappy, J. Mateos, T. González and D. Pardo
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 159-164. (1996)