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35. Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: Degeneracy and screening

- J. M. Iglesias, A. Nardone, R. Rengel, K. Kalna, M. J. Martín, and E. Pascual
- 2D Materials 14, 025011 (2023)

34. High-order harmonic generation in 2D transition metal disulphides

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Applied Physics Letters 119, 012101 (2021)

33. Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence

- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Materials 14, 5108 (2021)

32. Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides

- R. Rengel, O. Castelló, E. Pascual, M. J. Martín, and J. M. Iglesias
- Journal of Physics D: Applied Physics 59, 395102 (2020)

31. Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Physica E: Low-dimensional Systems and Nanostructures 123, 114211 (2020)

30. Electronic transport and noise characterization in MoS2

- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 35, 055021 (2020)

29. Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

- R. Rengel, E. Pascual, I. Íñiguez-de-la-Torre, M. J. Martín, and B. G. Vasallo
- Journal of Science Education and Technology 28, 445 (2019)

28. Interband scattering-induced ambipolar transport in graphene

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 34, 065011 (2019)

27. Monte Carlo investigation of noise and high-order harmonic extraction in graphene

- J. M. Iglesias, E. M. Hamham, E. Pascual, and R. Rengel
- Semiconductor Science and Technology 33, 124012 (2018)

26. Impact of the hot phonon effect on electronic transport in monolayer silicene

- E. M. Hamham, J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Journal of Physics D: Applied Physics 51, 415102 (2018)

25. Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Surface Science 424, 52-57 (2017)

24. Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene

- J. M. Iglesias, R. Rengel, Hamham E. M., E. Pascual and M. J. Martín
- Journal of Physics D: Applied Physics 50, 305101 (2017)

23. A balance equations approach for the study of the dynamic response and electronic noise in graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Applied Physics 121, 185705 (2017)

22. Noise temperature in graphene at high frequencies

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Semiconductor Science and Technology 31, 075001 [1-6] (2016)

21. Spectral density of velocity fluctuations under switching field conditions in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Statistical Mechanics: Theory and Experiment 2016, 054018 [1 8] (2016)

20. Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Physics Letters 108, 043105 (2016)

19. Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087481 (2015)

18. Monte Carlo modeling of mobility and microscopic charge transport in supported graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087445 (2015)

17. Effect of charged impurity scattering on the electron diffusivity and mobility in graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Physics: Conference Series 647, 012046 [1-4] (2015)

16. Carrier-carrier and carrier-phonon interactions in the dynamics of photoexcited electrons in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Physics: Conference Series 647, 012003 (2015)

15. Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

- M. J. Martín, C. Couso, E. Pascual and R. Rengel
- IEEE Transactions on Electron Devices 99, 3955 (2014)

14. Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons

- R. Rengel, E. Pascual and M. J. Martín
- Applied Physics Letters 104, 233107 (2014)

13. Effect of the dopant segregation layer on the static characteristics of Schottky-Barrier n-MOSFETs

- C. Couso, E. Pascual, J. M. Galeote, M. J. Martín and R. Rengel
- 8th Internacional Caribbean Conferencia on Devices, Circuits and Systems (ICCDCS 2012), 2012, pp. 1-4 ISBN: 978-1-4577-1116-9 , DOI: 10.1109/ICCDCS.2012.6188919 (2012)

12. RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

- M. J. Martín, E. Pascual and R. Rengel
- Solid-State Electronics 73, 64–73 (2012)

11. A Monte Carlo model for the study of n-type strained Silicon Schottky Diodes

- J. M. Galeote, R. Rengel, E. Pascual, and M. J. Martín
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #121 (2011)

10. Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis

- E. Pascual, R. Rengel and M. J. Martín
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 329-332 (2009)

9. Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study

- E. Pascual, R. Rengel and M. J. Martín
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 108-111. (2009)

8. Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research

- E. Pascual , M. J. Martín , R. Rengel, G. Larrieu and E. Dubois
- Semiconductor Science and Technology 24, 025022 [1-6] (2009)

7. Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: A Monte Carlo study

- M. J. Martín, R. Rengel, E. Pascual, J. £usakowski, W. Knap and T. González
- Physica Status Solidi (c) 5, 123-126 (2008)

6. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

- E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M. J. Martín
- Physica Status Solidi (c) 5, 119-122 (2008)

5. RF noise and scaling in nanometer SOI MOSFETs: influence of quasiballistic transport

- M. J. Martín, R. Rengel, E. Pascual and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 99-102 (2007)

4. Monte Carlo analysis of quantum tunnelling and thermionic transport in a reverse biased Schottky diode

- E. Pascual, R. Rengel y M. J. Martín
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 108-111 (2007)

3. Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

- M. J. Martín, R. Rengel, E. Pascual and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 340-343 (2007)

2. Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

- E. Pascual, R. Rengel and M. J. Martín
- Semiconductor Science and Technology 22, 1003-1009 (2007)

1. Injected Current and Quantum Transmission Coefficient in Low Schottky Barriers: WKB and Airy Approaches

- R. Rengel, E. Pascual and M. J. Martín
- IEEE Electron Device Letters 28, 171-173 (2007)