About

Tomás González graduated in Physics by the University of Salamanca in 1990, where he also got the Ph.D. degree in 1994 In 1992 he made a stay of four months at the Physics Department from the University of Modena (Italy). Since 1991 he belongs to the Applied Physics Department from the University of Salamanca, where he became Associate Professor of Electronics in 1996 and at present is Full Professor since 2007.

Currently, he is the director of the Research Consolidated Unit UIC 015 recognized by the Junta de Castilla y León.

His main research activity is in the field of transport and noise in semiconductor materials and high-frequency electronic devices (III-V transistors and ballistic nanodevices); design, microscopic modeling and experimental characterization of semiconductor nanodevices; and development of nanodevices for room-temperature THz detection and emission.

He has been supervisor of 6 Ph.D. students and 4 postdoctoral researchers. He has participated to more than 40 research projects and thematic networks (20 as main researcher) funded by regional, national and international institutions and companies. He is author or coauthor of more than 180 papers in refereed journals included in the WoS (115 in the first quartile) and 290 conference contributions (28 invited papers). He has been invited editor in special issues of Journal of Computational Electronics (on Noise Modelling) and Semiconductor Science and Technology (on THz Devices). He has served (and serves) on Editorial Boards of Scientific Journals (Fluctuation and Noise Letters, Journal of Computational Electronics, Sensors) and Advisory Committees of Scientific Conferences (Trends in Nanotechnology-TNT, International Conference on Noise and Fluctuations-ICNF, International Conference on Electron Dynamics in Semiconductors, Optoelectronics and Nanostructures-EDISON and Spanish Conference on Electron Devices-CDE). He has been general chair of four conferences taking place in Salamanca (TNT’2003, ICNF’2005, EDISON’2017, CDE’2018). He is senior member of IEEE since 2007. He serves as referee in various international journals. His h-index is 27 according to WoS.

From 2012 to 2017 he was collaborator of the “Agencia Nacional de Evaluación y Prospectiva” (ANEP) in the area of Electrical and Electronic Engineering and Automatics (IEL), sub-area of Electronic Devices. He has served five times as Vice-Chair / Cross-Reader in the evaluation panels of research proposals submitted to FET and Pathfinder OPEN Calls from H2020 and Horizon Europe Programmes of the European Commission.

Updated information:https://produccioncientifica.usal.es/investigadores/57059/detalle

Articles Published

363. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

- E. Pérez-Martín, T. González, I. Íñiguez-de-la-Torre, and J. Mateos
- Journal of Applied Physics 135, 044502 (2024)

362. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

- B. Orfao, M. Abou Daher, R. A. Peña, B. G. Vasallo, S. Pérez, I. Íñiguez-de-la-Torre, G. Paz-Martínez, J. Mateos, Y. Roelens, M. Zaknoune, and T. González
- Journal of Applied Physics 135, 014501 (2024)

361. A closed-form expression for the frequency dependent microwave responsivity of transistors based on the I-V curve and S-parameters

- G. Paz-Martínez, P. Artillan, J. Mateos, E. Rochefeuille, T. González, and I. Íñiguez-de-la-Torre
- IEEE Transactions on Microwave Theory and Techniques 72, 415-420 (2024)

360. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, P. Artillan, H. Sánchez-Martín, S. García-Sánchez, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques (2023)

359. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

- I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, and J. Mateos
- Applied Physics Letters 123, 123503 (2023)

358. Low temperature memory effects in AlGaN/GaN nanochannels

- H. Sánchez-Martín, E. Pérez-Martín, G. Paz-Martínez, J. Mateos, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 123, 103505 (2023)

357. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

- E. Pérez-Martín, H. Sánchez-Martín, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 34, 325201 (2023)

356. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

- S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 3447 (2023)

355. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

- S. García-Sánchez, R. Rengel, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 2981 (2023)

354. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

- T. Gonzalez, B. Orfao, S. Pérez, J. Mateos, and B. G. Vasallo
- Applied Physics Express 16, 024003 (2023)

353. Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques 71, 3126 (2023)

352. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

- G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, and J. Mateos
- Journal of Applied Physics 132, 134501 (2022)

351. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

- B. Orfao, G. Di Gioia, B. G. Vasallo, S. Pérez, J. Mateos, Y. Roelens, E. Frayssinet, Y. Cordier, M. Zaknoune, and T. González
- Journal of Applied Physics 132, 044502 (2022)

350. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

- H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
- Solid-State Electronics 193, 108289 (2022)

349. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos and T. González
- Sensors 22, 1515 (2022)

348. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 69, 514 (2022)

347. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, S. Pérez, T. González, and J. Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455727 (2021)

346. Bias-dependence of surface charge at low temperature in GaN Self-Switching Diodes

- E. Pérez-Martín, I. Íniguez-De-La-Torre, T. González, C. Gaquière, and J Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455737 (2021)

345. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

- E. Pérez-Martín, I. Íñiguez-de-la-Torre, C. Gaquière, T. González, and J. Mateos
- Journal of Applied Physics 10, 104501 (2021)

344. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

- B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
- IEEE Transactions on Electron Devices 68, 4296 (2021)

343. Temperature behavior of Gunn oscillations in planar InGaAs diodes

- J. A. Novoa-López, G. Paz-Martínez, H. Sánchez-Martín, Y. Lechaux, I. Íñiguez-de-la-Torre, T. González, and J. Mateos
- IEEE Electron Device Letters 42, 1136 (2021)

342. Influence of laser modulation frequency on the performance of terahertz photoconductive switches on semi-insulating GaAs exhibiting negative differential conductance

- G. Paz-Martinez, C. G. Treviño-Palacios, J. Molina-Reyes, A. Romero-Morán, E. Cervantes-García, J. Mateos, and T. González
- IEEE Transactions on Terahertz Science and Technology 11, 591 (2021)

341. Non-linear thermal resistance model for the simulation of high power GaN-based devices

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
- Semiconductor Science and Technology 36, 055002 (2021)

340. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

- E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
- Microelectronics Reliability 114, 113806 (2020)

339. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

- Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
- Smiconductor Science and Technology 35, 115009 (2020)

338. Noise and charge discreteness as ultimate limit for the T Hz operation of ultra‑small electronic devices

- E. Colomés, J. Mateos, T. González, and X. O riols
- Scientific Reports 10, 15990 (2020)

337. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
- IEEE Transactions on Electron Devices 9, 3530 (2020)

336. Interplay between channel and shot noise at the onset of spiking activity in neural membranes

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 19, 792 (2020)

335. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

- E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 31, 405204 (2020)

334. Ion shot noise in Hodgkin–Huxley neurons

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 17, 1790 (2018)

333. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

- H. Sánchez-Martín, S. Sánchez-Martín, I. Íñiguez-de-la-Torre , S. Pérez, J. A. Novoa , G. Ducournau, B. Grimbert, C. Gaquière, T. González and J. Mateos
- Semiconductor Science and Technology 33, 095016 (2018)

332. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

- H. Sánchez-Martín, J. Mateos, J. A. Novoa, J. A. Delgado-Notario, Y. M. Meziani, S. Pérez, H. Theveneau, G. Ducournau, C. Gaquière, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 113, 043504 (2018)

331. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

- B. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos
- Journal of Applied Physics 123, 034501 [1-5] (2018)

330. Stochastic model for action potential simulation including ion shot noise

- B. G. Vasallo, F. Galán-Prado, J. Mateos, T. González, S. Hedayat, V. Hoel, and A. Cappy
- Journal of Computational Electronics 16, 419-430 (2017)

329. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

- H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Semiconductor Science and Technology 32, 035011 [1-8] (2017)

328. Design and analysis of high performance ballistic nanodevice-based sequential circuits using Monte Carlo and Verilog AMS simulations

- P. Marthi, N. Hossain, H. Wang, J.-F. Millithaler, M. Margala, I. Iñiguez-de-la-Torre, J. Mateos, and T. González
- IEEE Transactions on Circuits and Systems I: Regular Papers 63, 2236-2244 (2016)

327. Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes

- D. Moro-Melgar, A. Maestrini, J. Treuttel, L. Gatilova, T. González, B. G. Vasallo, and J. Mateos
- IEEE Transactions on Electron Devices 63, 3900-3907 (2016)

326. Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
- Semiconductor Science and Technology 31, 065005 [1-9] (2016)

325. Room temperature direct and heterodyne detection of 0.28 to 0.69 THz waves based on GaN 2DEG unipolar nanochannels

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González.
- IEEE Transactions on Electron Devices 63, 353- 359 (2016)

324. Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288553 (2015)

323. Experimental analysis of shot‐noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

- Ó. García-Pérez, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288539 (2015)

322. Carrier dynamics probed by noise in high‐frequency electronic devices

- T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288541 (2015)

321. Time-dependent physics of double-tunnel junctions

- V. Talbo, J. Mateos, S.Retailleau, P. Dollfus and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087477 (2015)

320. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087474 (2015)

319. Anomalous low-frequency noise Increase at the onset of oscillations in Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087504 (2015)

318. Fabrication and characterization of fully transparent ZnO thin-film transistors and self-switching nano-diodes

- Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Íñiguez-de-la-Torre, and T. González
- Journal of Physics: Conference Series 647, 012068 [1-4] (2015)

317. Optimization of ballistic deflection transistors by Monte Carlo simulations

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Journal of Physics: Conference Series 647, 012066 [1-4] (2015)

316. Improvement of interfacial and electrical properties of Al2O3/ n‑Ga0.47In0.53As for III-V impact ionization MOSFETs

- Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T. González, B. G. Vasallo, and N. Wichmann
- Journal of Physics: Conference Series 647, 012062 [1-4] (2015)

315. Shot-noise suppression effects in InGaAs planar diodes at room temperature

- Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- Journal of Physics: Conference Series 647, 012061 [1-4] (2015)

314. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

- V. Talbo, J. Mateos, T. González, Y. Lechaux, N. Wichmann, S. Bollaert and B. G. Vasallo
- Journal of Physics: Conference Series 647, 012056 [1-4] (2015)

313. Temperature and surface traps influence on the THz emission from InGaAs diodes

- A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
- Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

312. Ultra-high responsivity of optically-active semiconducting asymmetric nano-channel diodes

- Y. Akbas, A. Stern, L. Q. Zhang, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, J. Mateos, T. González, G. Wicks, and R. Sobolewski
- Journal of Physics: Conference Series 647, 012013 [1-4] (2015)

311. 0.69 THz room temperature terahertz heterodyne detection using unipolar nanodiodes

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González
- Journal of Physics: Conference Series 647, 012006 (2015)

310. Review of electron transport properties in bul InGaAs and InAs at room temperature

- S. Karishy, P. Ziadé, G. Sabatini, H. Marinchio, C. Palermo, L. Varani, J. Mateos, and T. Gonzalez
- Lithuanian Journal of Physics 55, 305-314 (2015)

309. Study of surface charges in ballistic deflection transistors

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Nanotechnology 26, 485202 [1-6] (2015)

308. Time-dependent shot noise in multi-level quantum dot-based single-electron devices

- V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
- Semiconductor Science and Technology 30, 055002 [1-7] (2015)

307. Monte Carlo modelling of noise in advanced III-V HEMTs

- J. Mateos, H. Rodilla, B. G. Vasallo and T. González
- Journal of Computational Electronics 14, 72-86 (2015)

306. Introduction to special issue on noise modelling

- T. González
- Journal of Computational Electronics 14, 1-3 (2015)

305. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

- A. Westlund, P. Sangaré, G. Ducournau, I. Iñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
- Solid-State Electronics 104, 79-85 (2015)

304. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

- S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
- Semiconductor Science and Technology 30, 035001 [1-8] (2015)

303. Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. Gonzalez and J. Mateos
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865816 (2014)

302. Frequency-dependent shot noise in single-electron devices

- V. Talbo, J. Mateos, S. Retailleau, P. Dollfus and T. González
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865843 (2014)

301. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs HEMTs

- D. Moro-Melgar, J. Mateos, T. González and B. G. Vasallo
- Journal of Applied Physics 116, 234502 [1-7] (2014)

300. Operation of GaN planar nanodiodes as THz detectors and mixers

- I. Iñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos
- IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)

299. Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos
- Semiconductor Science and Technology 29, 115032 [1-9] (2014)

298. Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

- O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- Applied Physics Letters 105, 113502 [1-4] (2014)

297. On the effect of d-doping in self-switching diodes

- A. Westlund, I. Iñiguez-de-la-Torre, P. A. Nilsson, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière, L. Desplanque, X. Wallart, and J. Grahn
- Applied Physics Letters 105, 093505 [1-5] (2014)

296. Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

- J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos
- Applied Physics Letters 104, 073509 [1-4] (2014)

295. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

294. Room temperature THz detection and emission with semiconductor nanodevices

- J. Mateos, J. F. Millithaler, I. Íñiguez‐de‐la‐Torre, A. Íñiguez‐de‐la‐Torre, B. G. Vasallo, S. Pérez, P. Sangare, G. Ducournau, C. Gaquiere, Y. Alimi, L. Zhang, A. Rezazadeh, A. M. Song, A. Westlund, J. Grahn, and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 215-218. ISBN: 978-1-4673-4666-5 (2013)

293. Ballistic deflection transistor: geometry dependence and Boolean operations

- I. Íñiguez‐de‐la‐Torre, V. Kaushal, M. Margala, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 187-190. ISBN: 978-1-4673-4666-5 (2013)

292. Time‐domain Monte Carlo simulations of resonant‐circuit operation of GaN Gunn diodes

- S. García, B. G. Vasallo, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 79-82. ISBN: 978-1-4673-4666-5 (2013)

291. Monte Carlo analysis of thermal effects in Self‐Switching Diodes

- J. F. Millithaler, I. Iñiguez‐de‐la‐Torre, T. González and J. Mateos
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 45-48. ISBN: 978-1-4673-4666-5 (2013)

290. Accurate predictions of Terahertz noise in ultra-small quantum devices: A limiting factor for their commercial viability?

- X. Oriols, A. Benali, S. M. Yaro, G. Albareda, F. L. Traversa, J. Mateos and T. González
- 22nd International Conference on Noise and Fluctuations, 2013, pp. 1-4. ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578886 (2013)

289. Noise Equivalent Power in Terahertz detectors based on semiconductor nanochannels

- J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González and J. Mateos
- 22nd International Conference on Noise and Fluctuations, 2013, pp. 1-4. ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578885 (2013)

288. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. ISBN: 97888970100-2 (2013)

287. Nonlinear nanochannels for room temperature terahertz heterodyne detection

- J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangaré, B. Grimbert, M. Faucher, G. Ducournau, C. Gaquière, I. Iñiguez-de-la-Torre, J. Mateos and T. Gonzalez
- Semiconductor Science and Technology 28, 125024 [1-6] (2013)

286. Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length

- S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- Journal of Applied Physics 114, 074503 [1-9] (2013)

285. Experimental demonstration of direct terahertz detection at room temperature in AlGaN/GaN asymmetric nanochannels

- P. Sangaré, G. Ducournau, B. Grimbert, V. Brandli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
- Journal of Applied Physics 113, 034305 [1-6] (2013)

284. Analysis of nonharmonic oscillations in Schottky diodes

- D. Pardo, J. Grajal, S. Pérez, T. González and J. Mateos
- Journal of Applied Physics 112, 053703 [1-9] (2012)

283. Plasma enhanced terahertz rectification and noise in InGaAs HEMTs

- J. Mateos and T. González
- IEEE Transactions on Terahertz Science and Technology 2, 562-569 (2012)

282. Effect of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors

- V. Kaushal, I. Íñiguez-de-la-Torre, T. González, J. Mateos, B. Lee, V. Misra, and M. Margala
- IEEE Electron Device Letters 33, 1120-1122 (2012)

281. Searching for THz Gunn oscillations in GaN planar nanodiodes

- A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangaré, G. Ducournau, and C. Gaquière
- Journal of Applied Physics 11, 113705 [1-9] (2012)

280. Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Semiconductor Science and Technology 27, 065018 [1-5] (2012)

279. Monte Carlo studies of the intrinsic time-domain response ofnanoscale three-branch junctions

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, T. González, H. Irie, and Roman Sobolewski
- Journal of Applied Physics 111, 084511 [1-4] and Virtual Journal of Nanoscale Science & Technology 25 [20] (2012)

278. Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 27, 015008 [1-6] (2012)

277. Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

- I. Íñiguez-de-la-Torre, T. González, H. Rodilla, B. G. Vasallo and J. Mateos
- APPLICATIONS OF MONTE CARLO METHOD IN SCIENCE AND ENGINEERING, pp. 803-828 (2011) Edited by: S. Mark and S. Mordechai. InTech, Rijeka (Croacia) (2011)

276. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. (2011)

275. Wide band gap self-switching nanodevices for THz applications at room temperature

- C. Gaquiere, G. Ducournau, P. Sangaré, B. Grimbert, M. Faucher, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, T. González and J. Mateos
- Proceedings of the 41st European Microwave Conference, 2011, pp. 1150-1152. (2011)

274. Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

- H. Rodilla, B. G. Vasallo, J. Mateos, G. Moschetti, J. Grahn, and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 188-191 (2011)

273. Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

- D. Pardo, S. Pérez, J. Grajal, J. Mateos and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 110-113 (2011)

272. Noise and Terahertz rectification in semiconductor diodes and transistors

- J. Mateos, I. Íñiguez-de-la-Torre and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 16-21. (2011)

271. Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications

- D. Pardo, J. Grajal de la Fuente, S. Pérez, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #95. (2011)

270. Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

- B. García, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #93. (2011)

269. Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J.n Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #78. (2011)

268. OPTTR induced current oscillations in GaN diodes Monte Carlo simulations

- A. Íñiguez-de-la-Torre, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #77 (2011)

267. Toward THz Gunn Oscillations in Planar GaN Nanodiodes (artículo invitado)

- A. Íñiguez-de-la-Torre, J. Mateos, I. Íñiguez-de-la-Torre, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #53. (2011)

266. Exploring digital logic design using nano-devices through Monte Carlo simulations

- I. Íñiguez-de-la-Torre, S. Purohit, V. Kaushal, M. Margala, M. Gong, R. Sobolewski, D. Wolpert, P. Ampadu, T. González, and J. Mateos
- IEEE Transactions on Nanotechnology 10, 1337-1346 (2011)

265. Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

- I. Íñiguez-de-la-Torre, J. Mateos, Y. Roelens, C. Gardès, S. Bollaert and T. González
- Nanotechnology 22, 445203 [1-5] (2011)

264. Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study

- A. Iñiguez-de-la-Torre, I. Iñiguez-de-la-Torre, J. Mateos and T. González
- Applied Physics Letters 99, 062109 [1-3] and Virtual Journal of Nanoscale Science & Technology 24 [8] (2011)

263. Analysis of noise spectra in GaAs and GaN Schottky barrier diodes

- D. Pardo, J. Grajal, B. Mencía, S. Pérez, J. Mateos and T. González
- Semiconductor Science and Technology 26, 055023 [1-11] (2011)

262. Monte Carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, E. Lefebvre, G. Moschetti, J. Grahn, and J. Mateos
- Acta Physica Polonica A 119, 222-224 (2011)

261. Monte Carlo analysis of the dynamic behavior of InAlAs/InGaAs velocity modulation transistors: a geometrical optimization

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Acta Physica Polonica A 119, 193-195 (2011)

260. Submillimeter-wave oscillations in recessed InGaAs/InAlAs heterostructures: origin and tuneability

- S. Pérez, J. Mateos, and T. González
- Acta Physica Polonica A 119, 111-113 (2011)

259. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J. Grahn and J. Mateos
- Semiconductor Science and Technology 26, 025004 [1-7] (2011)

258. Transconductance characteristics and plasma oscillations in nanometric InGaAs field effect transistors

- J.-F. Millithaler, J. Pousset, L. Reggiani, H. Marinchio, L. Varani, C. Palermo, P. Ziade, J. Mateos, T. González and S. Pérez
- Solid-State Electronics 56, 116-119 (2011)

257. THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, A. M. Song and J. Mateos
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 369-372 (2010)

256. Plasma-resonant THz detection with HEMTs

- J. Mateos, H. Marinchio, C. Palermo, L. Varani and T. González
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 344-347 (2010)

255. Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

- H. Rodilla, T. González, M. Malmkvist, E. Lefebvre, G. Moschetti, J. Grahn and J. Mateos
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 333-336 (2010)

254. Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Journal of Applied Physics 108, 094505 [1-5] (2010)

253. Three-Terminal Junctions operating as mixers, frequency doublers and detectors. A broad-band frequency numerical and experimental study at room temperature

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Semiconductor Science and Technology 25, 125013 [1-14] (2010)

252. Monte Carlo study of the static and dynamic performance of a 100 nm-gate InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 57, 2572-2578 (2010)

251. A generalized drift-diffusion model for rectifying Schottky contact simulation

- F. L. Traversa, F. Bertazzi, F. Bonani, S. Donati, G. Ghione, S. Pérez, J. Mateos and T. González
- IEEE Transactions on Electron Devices 57, 1539-1547 (2010)

250. Enhanced Terahertz detection in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González and A. M. Song
- International Journal of Numerical Modeling 23, 301-314 (2010)

249. Terahertz current oscillation assisted by optical phonon emission in Gan n+nn+ diodes: Monte Carlo simulations

- A. Iñiguez-de-la-Torre, J. Mateos and T. González
- Journal of Applied Physics 107, 053707 [1-6] (2010)

248. Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regime

- G. Sabatini, H. Marinchio, L. Varani, C. Palermo, J. F. Millithaler, L. Reggiani, H. Rodilla, T. Gonzàlez, S. Pérez and J. Mateos
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 345-348 (2009)

247. High frequency noise in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 237-240 (2009)

246. Noise enhanced THz rectification tuned by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 229-232 (2009)

245. Monte Carlo Simulation of GaN HEMTs: Influence of GaN p-type Doping and High Temperature of Operation

- J. Mateos, S. Pérez, R. Cuerdo, E. Muñoz , F. Calle and T. González
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Wed3, pp. 26-29 (2009)

244. Gunn oscillations in asymmetric nanodiodes based on narrow and wide band-gap semiconductors: Monte Carlo simulations

- T. González, I. Íñiguez-de-la-Torre, D. Pardo, J. Mateos, and A. M. Song
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Tu5, pp. 20-23 (2009)

243. Monte Carlo simulation of InAs/AlSb HEMTs

- H. Rodilla, J. Mateos, T. González, M. Malmkvist, Eric Lefebvre and J. Grahn
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Mon7, pp. 10-13 (2009)

242. Tunable Terahertz resonance in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D., T. González and A. M. Song
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 463-466 (2009)

241. Monte Carlo analysis of thermal effects in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 459-462 (2009)

240. Frequency response of T-shaped three branch junctions as mixers and detectors

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, J. Mateos, Y. Roelens and S. Bollaert
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 168-171. (2009)

239. Monte Carlo simulation of Sb-based heterostructures

- H. Rodilla, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 152-155. (2009)

238. Monte Carlo study of an InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 128-131. (2009)

237. Plasmonic noise in Si and InGaAs semiconductor nanolayers

- J. Pousset, J.-F. Millithaler, L. Reggiani, G. Sabatini, C. Palermo, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, A. Bournel and P. Dollfus
- Journal of Physics: Conference Series 193, 012091 [1-4] (2009)

236. On the geometrical tunabililty of THz Gunn-like oscillations in InGaAs/InAlAs slot-diodes

- S. Pérez, J. Mateos, D. Pardo and T. González
- Journal of Physics: Conference Series 193, 012090 [1-4] (2009)

235. Terahertz tuneable detection in Self-Switching Diodes based on high mobility semiconductors: InGaAs, InAs and InSb

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Journal of Physics: Conference Series 193, 012082 [1-4] (2009)

234. Monte Carlo simulation of ballistic transport in high-mobility channels

- G. Sabatini, H. Marinchio, C. Palermo, L. Varani, T. Daoud, R. Teissier, H. Rodilla, T. González, and J. Mateos
- Journal of Physics: Conference Series 193, 012035 [1-4] (2009)

233. RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Journal of Physics: Conference Series 193, 012021 [1-4] (2009)

232. Monte Carlo analysis of Gunn oscillations in narrow and wide band-gap asymmetric nanodiodes

- T. González, I. Iñiguez-de-la Torre, D. Pardo, J. Mateos and A. M. Song
- Journal of Physics: Conference Series 193, 012018 [1-4] (2009)

231. Monte Carlo investigation of TeraHertz plasma oscillations in gated ultrathin channel of n-InGaAs

- J. F. Millithaler, J. Pousset, L. Reggiani, P. Ziade, H. Marinchio, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Applied Physics Letters 95, 152102 [1-3] (2009)

230. High-mobility heterostructures based on InAs and InSb: A Monte Carlo study

- H. Rodilla, T. González, D. Pardo, and J. Mateos
- Journal of Applied Physics 105, 113705 [1-6] (2009)

229. Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens , S. Bollaert and J. Mateos
- Journal of Applied Physics 105, 094504 [1-7] and Virtual Journal of Nanoscale Science & Technology 19 [20] (2009)

228. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

- N. Wichmann, B. G. Vasallo, S. Boolaert, Y. Roelens, X. Wallart, A. Cappy, T. González, D. Pardo and J. Mateos
- Applied Physics Letters 94, 103504 [1-3] (2009)

227. Plasmonic noise in nanometric semiconductor layers

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: Theory and Experiment 2009, P02030 [1-12] (2009)

226. Noise and terahertz rectification linked by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la Torre, J. Mateos, D. Pardo, A. M. Song and T. González
- Applied Physics Letters 94, 093512 [1-3] (2009)

225. A Monte Carlo investigation of plasmonic noise in nanometric InGaAs channels

- J. F. Millithaler, L. Reggiani, J. Pousset, L. Varani, C. Palermo, W. Knap, J. Mateos, T. González, S. Pérez, D. Pardo
- Journal of Statistical Mechanics: theory and experiment 2009, P01040 [1-12] (2009)

224. Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- Proceedings of the 2008 International Conference on Indium Phosphide and Related Materials (IPRM 08), IEEE Catalog CFP08IIP-CDR, 2008, p89 (2008)

223. TeraHertz oscillations in ultra-thin n-In0.53Ga0.47As ungated channels

- J. F. Millithaler, L. Reggiani, J. Pousset, G. Sabatini, L. Varani, C. Palermo, J.Mateos, T. González, S. Pérez and D. Pardo
- Journal of Physics: Condensed Matter 20, 384210 [1-7] (2008)

222. Comparison between the noise performance of double- and single-gate InP-based HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 55, 1535-1540 (2008)

221. Ballistic nanodevices for high-frequency applications

- C. Gardes, Y. Roelens, S. Bollaert, A. Cappy, J.S. Galloo, X. Wallart, C. Gaquiere, A. Curutchet, J. Mateos, T. González, B.G. Vasallo, L. Bednarz, and I. Huynen
- International Journal of Nanotechnology 5, 796-808 (2008)

220. THz Gunn-like oscillations in InGaAs/InAlAs planar diodes

- S. Pérez, T. González, D. Pardo and J. Mateos
- Journal of Applied Physics 103, 094516 [1-5] and Virtual Journal of Ultrafast Science 7 [6] (2008)

219. Monte Carlo investigation of THz plasma oscillations in ultra-thin layers of n‑type InGaAs

- J. F. Millithaler, L. Reggiani, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez and D. Pardo
- Applied Physics Letters 92, 042113 [1-3] (2008)

218. Monte Carlo analysis of noise spectra in self-switching nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 103, 024502 [1-6] and Virtual Journal of Nanoscale Science & Technology 17 [5] (2008)

217. Monte Carlo simulation of plasma oscillations in ultra-thin layers

- J. F. Millithaler, L. Varani, C. Palermo, J. Pousset, W. Knap, J.Mateos, T. González, S. Pérez, D. Pardo and L. Reggiani
- Physica Status Solidi (c) 5, 249-252 (2008)

216. Excitation of millimeter-wave oscillations in InAlAs/InGaAs heterostructures

- S. Pérez, J. Mateos, D. Pardo and T. González
- Physica Status Solidi (c) 5, 146-149 (2008)

215. Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: A Monte Carlo study

- M. J. Martín, R. Rengel, E. Pascual, J. £usakowski, W. Knap and T. González
- Physica Status Solidi (c) 5, 123-126 (2008)

214. Monte Carlo simulation of surface charge effects in T-branch nanojunctions

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens and A. Cappy
- Physica Status Solidi (c) 5, 94-97 (2008)

213. Monte Carlo analysis of memory effects in nano-scale rectifying diodes

- I. Iñiguez-de-la-Torre, T. González, D. Pardo and J. Mateos
- Physica Status Solidi (c) 5, 82-85 (2008)

212. Kinetic and partial-differential equation modeling of noise in Schottky barrier diodes: a comparison

- F. L.Traversa, F. Bertazzi, F. Bonani, G. Ghione, S.Pérez, J. Mateos, T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 321-324 (2007)

211. Microscopic analysis of noise in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 317-320 (2007)

210. Noise anaysis of plasma wave oscillations in InGaAs channels

- J. Pousset, J. F. Millithaler, C. Palermo, G. Sabatini, H. Marinchio, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, E. Starikov, P. Shiktorov, V. Gruzhinskis and L. Reggiani
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 201-204 (2007)

209. Monte Carlo investigation of THz oscillations in InAlAs/InGaAs heterostructures by means of current and voltage noise spectra

- S. Pérez, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 197-200 (2007)

208. Noise behavior of InP-based double-gate and standard HEMTs: a comparison

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 167-170 (2007)

207. RF noise and scaling in nanometer SOI MOSFETs: influence of quasiballistic transport

- M. J. Martín, R. Rengel, E. Pascual and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 99-102 (2007)

206. Monte Carlo simulation of GaN HEMT degradation mechanisms

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 233-236 (2007)

205. Three-terminal ballistic junctions with Schottky gates

- C. Gardès, Y. Roelens, S. Bollaert, A. Cappy, X. Wallart, J. Mateos, T. González and B. G. Vasallo
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 153-156 (2007)

204. Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

- M. J. Martín, R. Rengel, E. Pascual and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 340-343 (2007)

203. InAlAs/InGaAs heterostructures for THz generation

- S. Pérez, J. Mateos, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 127-130 (2007)

202. Monte Carlo simulation of AlGaN/GaN heterostructures

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 84-87 (2007)

201. Monte Carlo comparison between InAlAs/InGaAs double gate and standard HEMTs

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 80-83 (2007)

200. Surface charge effects in ballistic T-branch nanojunctions

- I. Íñiguez de la Torre, J. Mateos, T. González, D. Pardo, S. Bollaert, Y. Roelens and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 48-51 (2007)

199. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 54, 2815-2822 (2007)

198. Hysteresis phenomena in nano-scale rectifying diodes. A Monte Carlo interpretation in terms of surface effects

- I. Íñiguez de la Torre, T. González, D. Pardo and J. Mateos
- Applied Physics Letters 91, 063504 and Virtual Journal of Nanoscale Science & Technology 16 [8] (2007)

197. Ballistic nanodevices. A new concept in electronic design

- Y. Roelens, J. Mateos, S. Bollaert, J. S. Galloo, B. G. Vasallo, D. Pardo and T. González
- Revue E tijdschrift 123, 34-39 (2007)

196. Quasi ballistic transport in nanometer Si metal-oxide-semiconductor field-effect transitors: experimental and Monte Carlo analysis

- J. Lusakowski, M. J. Martín, R. Rengel, T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf and T. Skotnicki
- Journal of Applied Physics 101, 114511 and Virtual Journal of Nanoscale Science & Technology 15 [25] (2007)

195. Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

- I. Iñiguez-de-la-Torre, J. Mateos, T. González, D. Pardo, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- Semiconductor Science and Technology 22, 663-670 (2007)

194. Ballistic nanodevices for high frequency applications

- S. Bollaert, A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart, J. Mateos, T. González, B. G. Vasallo, B. Hackens, L. Bednarz and I. Huynen
- Thin Solid Films 515, 4321-4326 (2007)

193. Monte Carlo comparison between InP-based double-gate and standard HEMTs

- B.G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
- Proceedings of the 1st European Microwave Integrated Circuits Conference, IEEE Catalog 06EX1410, 2006, pp. 304-307. (CD) (2006)

192. Ultra Fast Gunn Effect at THz Frequencies in HEMTs

- J. Mateos, S. Perez, D. Pardo and T. González
- Proceedings of the 2006 International Conference on Indium Phosphide and Related Materials (IPRM 06), IEEE Catalog 06CH37737C, 2006, pp. 313-316 (WP13). (CD) (2006)

191. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 109-113 (2006)

190. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 291-294 (2006)

189. Negative differential transconductance and nonreciprocal effects in Y-branch nanojunction. High-frequency analysis

- L. Bednarz, Rashmi, P. Simon, I. Huynen, T. González and J. Mateos
- IEEE Transactions on Nanotechnology 5, 750-757 (2006)

188. Numerical modelling of TeraHertz electronic devices

- L. Varani, C. Palermo, J. F. Millithaler, J. C. Vaissiere, E. Starikov, P. Shiktorov, V. Gruzinskis, J. Mateos, S. Pérez, D. Pardo and T. González
- Journal of Computational Electronics 5, 71-77 (2006)

187. Theoretical investigation of Schottky-barrier diodes noise performance in external resonant circuits

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Semiconductor Science and Technology 21, 550-557 (2006)

186. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

- R. Rengel, T. González, J. Mateos, D. Pardo, G. Dambrine, F. Danneville, J. P. Raskin and M. J. Martín
- IEEE Transactions on Electron Devices 53, 523-532 (2006)

185. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

184. Study of nanometric HEMTs for Terahertz emission

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

183. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

- R. Rengel, J. Mateos, T. González, D. Pardo, G. Dambrine, F. Danneville and M. J. Martín
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.497-502 (2005)

182. Terahertz emission and noise spectra in HEMTs (artículo invitado)

- J. Mateos, S. Pérez, D. Pardo, T. González, J. Łusakowski, N. Dyakonova, W. Knap, S. Bollaert, Y. Roelens, A. Cappy, J.F. Millithaler and L. Varani
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.423-430. (2005)

181. Non-linear noise in nanometric Schottky barrier diodes (artículo invitado)

- S. Pérez, T. González, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 753-758 (2005)

180. Terahertz emission from nanometric HEMTs analyzed by noise spectra

- J. F. Millithaler, L. Varani, C. Palermo, J. Mateos, T. González, S. Pérez, D. Pardo, W. Knap, J. Lusakowski, N. Dyakonova, S. Bollaert and A. Cappy
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 335-338. (2005)

179. InP based ballistic nanodevices (artículo invitado)

- A. Cappy, J. S. Galloo, S. Bollaert, Y. Roelens, J. Mateos, T. González and W. Knap
- Proceedings of the 2005 International Conference on Indium Phosphide and Related Materials (IPRM 05), IEEE Catalog 05CH37633C, 2005, p217. (CD) (2005)

178. Monte Carlo analysis of nano-scale Schottky diodes por THz generation

- S. Pérez, T. González, L. Varani, C. Palermo, J.C. Vaissiere, J.F. Millithaler, E. Starikov, P. Shiktorov, V. Gruzinskis and L. Reggiani
- Proc. of 5th Int. Conf. and 7th Annual General Meeting of the European Society for Precision Engineering and Nanotechnology (EUSPEN), Bedford, 2005, Vol. 2, pp. 763-766 (2005)

177. THz operation of self-switching nanodiodes and nanotransistors

- J. Mateos, A. M. Song, B. G. Vasallo, D. Pardo and T. González
- Nanotechnology II. Proc. of SPIE 5838, 2005, pp. 145-153 (2005)

176. Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-024(1-4) (2005)

175. Electron transport and noise in Schottky diodes with electron traps in the active layer

- S. Pérez and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-022(1-4) (2005)

174. A simple approach for the fabrication of ultrafast unipolar diodes

- J. Mateos, A. M. Song, B. G. Vasallo, D. Pardo and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-018(1-4) (2005)

173. Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Semiconductor Science and Technology 20, 956-960 (2005)

172. Microwave detection at 110 GHz by nanowires with broken symmetry

- C. Balocco, A. M. Song, M. Aberg, A. Forchel, T. González, J. Mateos, I. Maximov, M. Missous, A. A. Rezazadeh, J. Saijets, L. Samuelson, D. Wallin, K. Williams, L. Worschech and H. Q. Xu
- Nano Letters 5, 1423-1427 (2005)

171. Operation and high-frequency performance of nanoscale unipolar rectifying diodes

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- Applied Physics Letters 86, 212103 [1-3] (2005)

170. Current noise spectra of Schottky barrier diodes with electron traps in the active layer

- S. Pérez and T. González
- Journal of Applied Physics 97, 073708 [1-7] (2005)

169. Voltage tunable terahertz emission from ballistic nanometer InGaAs/AlInAs transistor

- J. Lusakowski, W.Knap, N. Dyakonova, L. Varani, J. Mateos, T. Gonzalez, T. Parenty, S. Bollaert, A. Cappy and K. Karpierz
- Journal of Applied Physics 97, 064307 [1-7] and Virtual Journal of Nanoscale Science & Technology 11 [11] (2005)

168. Theoretical investigation of large-signal noise in nanometric Schottky-barrier diodes operating in external resonant circuits

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Varani, J. C. Vaissiere, L. Reggiani, S. Pérez and T. González
- Acta Physica Polonica A 107, 396-399 (2005)

167. Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure

- J. S. Galloo, Y. Roelens, S. Bollaert, Pichonat E, X. Wallart, A. Cappy, J Mateos, and T. González
- Proceedings of the 34th European Microwave Conference (EuMC 2004 - GAAS2004), European Microwave Association, 2004, pp. 219‑222. (2004)

166. Ballistic GaInAs/AlInAs devices technology and characterisation at room temperature

- J. S. Galloo, Y. Roelens, S. Bollaert, Pichonat E, X. Wallart, A. Cappy, J Mateos, and T. González
- Proceedings of the IEEE Nano 2004 Conference, IEEE Catalog (CD): 04TH8757C, 2004, 3p. (2004)

165. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381 (2004)

164. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)

163. Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise

- R. Rengel, T. González and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 519-528. (2004)

162. Noise in Shottky-barrier diodes: from static to large-signal operation

- P. Shiktorov, S. Pérez, T. González, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 322-336. (2004)

161. Nonlocal effects and transfer fields for electronic noise in small devices

- L. Varani, J. C. Vaissiere, P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 1-15. (2004)

160. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381. (2004)

159. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)

158. On the influence of space-quantization effects on the RF noise behavior of DG MOSFETs

- R. Rengel, T. González and M. J. Martín
- Fluctuation and Noise Letters 4, L561-L569 (2004)

157. Design optimization of AlInAs/GaInAs HEMTs for low-noise applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 1228-1233 (2004)

156. Kink-effect related noise in short-channel InAlAs/InGaAs High Electron Mobility Transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 95, 8271-8274 (2004)

155. Non-linear effects in T-branch junctions

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- IEEE Electron Device Letters 25, 235-237 (2004)

154. Monte Carlo simulation of high-order harmonics generation in bulk semiconductors and submicron structures

- D. Persano Adorno, M. Zarcone, G. Ferrante, P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Physica Satus Solidi (c) 1, 1367-1376 (2004)

153. Design optimization of AlInAs/GaInAs HEMTs for high-frequency applications

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty and A. Cappy
- IEEE Transactions on Electron Devices 51, 521-528 (2004)

152. Monte Carlo analysis of four-terminal ballistic rectifiers

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Nanotechnology 15, S250-S253 (2004)

151. Room temperature nonlinear transport in ballistic nanodevices

- T. Gonzalez, B. G. Vasallo, D. Pardo and J. Mateos
- Semiconductor Science and Technology 19, S125-S127 (2004)

150. Monte Carlo simulation of Schottky diodes operating under TeraHertz cyclostationary conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- IEEE Electron Device Letters 25, 1-3 (2004)

149. Monte Carlo simulation of ballistic nanodevices for THz applications

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 109-112 (2003)

148. Energy correlations and Coulomb suppression of shot noise in ballistic conductors

- T. González, J. Mateos, D. Pardo, G. Gomila, I. R. Cantalapiedra and L. Reggiani
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 93-96 (2003)

147. A Monte Carlo approach to current fluctuations under high-frequency large-amplitude cyclostationary conditions

- L. Varani, C. Palermo, J. C. Vaissiere, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, S. Pérez and T. González
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 81-84 (2003)

146. Monte Carlo simulation of large-signal noise in Schottky diodes

- S. Pérez, T. González, E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 645-649. (2003)

145. Analytical and numerical modelling of electronic noise in ballistic diodes (artículo invitado)

- T. González
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 607-613. (2003)

144. Resonant-like enhancement of hot-carrier noise under high-frequency large-signal operation

- E. Starikov, P. Shiktorov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 599-602. (2003)

143. Microscopic analysis of the high-frequency noise behavior of fabricated Fully-Depleted SOI MOSFETs

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 585-588. (2003)

142. Noise associated with the kink effect in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 357-360. (2003)

141. Kink-effect-related noise in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 415-423 (2003)

140. High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 379-386. (2003)

139. Microscopic investigation of large-signal noise in semiconductor materials and devices (artículo invitado)

- T. González, S. Pérez, P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 252-266 (2003)

138. Room temperature nonlinear transport in InGaAs/AlInAs ballistic nanodevices

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, H. Boutry, B. Hackens, V. Bayot, L. Bednarz, P. Simon, I. Huynen, J.S. Galloo, Y. Roelens, X. Wallart, S. Bollaert and A. Cappy
- Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 03CH37413, 2003, pp. 484-487. (2003)

137. Monte Carlo analysis of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 03CH37413, 2003, pp. 106-109. (2003)

136. Monte Carlo simulation of electronic noise under large-signal operation

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 504-511. (2003)

135. Monte Carlo simulation of noise in electronic devices: limitations and perspectives (artículo invitado)

- T. González, J. Mateos, M. J. Martín-Martínez, S. Pérez, R. Rengel, B. G. Vasallo and D. Pardo
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 496-503. (2003)

134. High order harmonics extraction for THz radiation generation in wide band gap semiconductors

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, S. Pérez and T. González
- Proceedings of the 26th International Conference on the Physics of Semiconductors, IOP Conference Series 171, 2003, M1.2 (1-6) (2003)

133. Microscopic investigation of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, VII-07(1-4) (2003)

132. Noise analysis of semiconductor submicron structures operating under large-signal regime

- S. Pérez and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-08(1-4) (2003)

131. Dynamic and noise behavior of short-gate FDSOI MOSFETs: numerical and experimental analysis

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-07(1-4) (2003)

130. Ballistic nanodevices for THz Data Processing. Monte Carlo simulations

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, II-05(1-4) (2003)

129. Monte Carlo simulation of electronic noise in semiconductor materials and devices operating under cyclostationary conditions

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, S. Pérez and T. González
- Journal of Computational Electronics 2, 455-458 (2003)

128. Monte Carlo study of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 94, 4096-4101 (2003)

127. Microscopic modelling of nonlinear transport in ballistic nanodevices

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- IEEE Transactions on Electron Devices 50, 1897-1905 (2003)

126. The role of energy correlations on Coulomb suppression of shot noise in ballistic conductors

- T. González, J. Mateos, D. Pardo, G. Gomila, I. R. Cantalapiedra and L. Reggiani
- Physical Review B 68, 075309 [1-6] and Virtual Journal of Nanoscale Science & Technology 8 [8] (2003)

125. Monte Carlo simulation of threshold bandwidth for high-order harmonics extraction

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani and J. C. Vaissiere
- IEEE Transactions on Electron Devices 50, 1171-1178 (2003)

124. Upconversion of partition noise in semiconductors operating under periodic large-signal conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
- Physical Review B 67, 165201 [1-10] (2003)

123. Ballistic nanodevices for THz data processing: Monte Carlo simulations

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy
- Nanotechnology 14, 117-122 (2003)

122. Upconversion of intergroup hot-carrier noise in semiconductors operating under periodic large-signal conditions

- P. Shiktorov, E. Starikov, V. Gruzinskis, S. Pérez, T. González, L. Reggiani, L. Varani, and J. C. Vaissiere
- Fluctuation and Noise Letters 3, L51-L61 (2003)

121. Monte Carlo calculations of shot noise in mesoscopic structures

- T. González
- Noise and Fluctuation Control in Electronic Devices, pp. 307-332 - Edited by: Alexander A. Balandin, American Scientific Publishers, Stevenson Ranch, CA (USA) (2002)

120. Electronic transport and noise in nanoelectronic ballistic n+-i-n+ diodes

- G. Gomila, R. Cantalapiedra, T. González, and L. Reggiani
- Proceedings of the 2002 2nd IEEE Conference on Nanotechnology, 2002, pp. 235-238 (2002)

119. Improvement of the high-frequency performance of HEMTs by bufferless technology

- J. Mateos, T. González, D. Pardo, S. Bollaert, X. Wallart, and A. Cappy
- Proceedings of the 14th Indium Phosphide and Related Materials Conference, IEEE Catalog 02CH37307, 2002, pp. 173-176. (2002)

118. Shot-noise anomalies in elastic nondegenerate diffusive semiconductors

- G. Gomila, T. González and L. Reggiani
- Physical Review B 66, 245423 (2002)

117. Numerical and experimental study of a 0.25 µm Fully-Depleted Silicon-on-Insulator MOSFET: static and dynamic RF behaviour

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville, and J.-P. Raskin
- Semiconductor Science and Technology 17, 1149-1156 (2002)

116. Influence of density, occupancy and location of electron traps on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Fluctuation and Noise Letters 2, 243-251 (2002)

115. Semiclassical theory of shot noise in ballistic n+-i-n+ semiconductor structures: relevance of Pauli and long-range Coulomb interaction

- G. Gomila, I. R. Cantalapiedra, T. González and L. Reggiani
- Physical Review B 66, 075302 (2002)

114. Monte Carlo analysis of voltage noise in submicron semiconductor structures under large-signal regime

- S. Pérez and T. González
- Semiconductor Science and Technology 17, 696-700 (2002)

113. Influence of trapping-detrapping processes on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Semiconductor Science and Technology 17, 440-445 (2002)

112. Influence of Ge profile on the noise behavior of SiGe HBTs under high injection conditions

- M.J. Martín-Martínez, S. Pérez, D. Pardo and T. González
- Physica B 314, 381-385 (2002)

111. Enhanced shot noise in mesoscopic nondegnerate diffusive semiconductors

- G. Gomila, T. González and L. Reggiani
- Physica B 314, 189-192 (2002)

110. RF noise in a short-channel n-MOSFET: a Monte Carlo study

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Material Science Forum 384-385, 155-158 (2002)

109. Noise optimization of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty, and A. Cappy
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 245-248. (2001)

108. Microscopic analysis of microwave noise sources in SiGe HBT’s

- M.J. Martín, J. Mateos, D. Pardo, and T. González
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 217-220. (2001)

107. Monte Carlo simulations of mesoscopic shot noise (artículo invitado)

- T. González
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 431-436. (2001)

106. Microscopic analysis of generation-recombination noise upconversion in semiconductors

- S. Pérez, T. González, S. L. Delage, and J. Obregon
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 265-268 (2001)

105. Influence of high-injection conditions on the noise behavior in Si BJTs and SiGe HBTs at RF frequencies

- M. J. Martín, T. González, and D. Pardo
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 145-148. (2001)

104. Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 85-88. (2001)

103. Comparative analysis of current fluctuations in Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez T. González, and D. Pardo
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1761-1762. (2001)

102. Design optimization of low-noise HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1777-1778. (2001)

101. When macroscopic semiconductors display shot noise

- G. Gomila, L. Reggiani, and T. González
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1351-1352. (2001)

100. Fermi and Coulomb suppression of shot noise suppression in ballistic diodes

- T. González, J. Mateos, D. Pardo and L. Reggiani
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1343-1344. (2001)

99. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
- VLSI Design 13, 85-90 (2001)

98. Transfer-field methods for electronic noise in submicron semiconductor structures

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- Rivista Nuovo Cimento 24(9), 1-71 (2001)

97. Monte Carlo analysis of dynamic and noise performance of submicron MOSFET at RF and microwave frequencies

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Semiconductor Science and Technology 16, 939-946 (2001)

96. Monte Carlo analysis of the noise behavior in Si BJT’s and SiGe HBT’s at RF frequencies

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Journal of Applied Physics 90, 1582-1588 (2001)

95. High Injection Effects on Noise Characteristics of Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Microelectronics Reliability 41, 847-854 (2001)

94. Monte Carlo analysis of the influence of dc conditions on the upconversion of generation-recombination noise in semiconductors

- S. Pérez, T. González, S. Delage, and J. Obregon
- Semiconductor Science and Technology 16, L8-L11 (2001)

93. Langevin forces and generalized transfer fields for noise modelling in deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo L. Reggiani, L. Varani and J. C. Vaissiere
- Proceedings of the Seventh International Workshop on Computational Electronics. (2000)

92. Design optimization of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- GAAS 2000 Conference Proceedings, Microwave Engineering Europe, 2000, pp. 624-627. (2000)

91. Can the dual property of noise representation be recovered within generalized field methods?

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
- Proceedings of the 2nd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 511, 2000, pp. 527-532 (2000)

90. The puzzle of 1/3 shot-noise suppression in diffusive conductors : universality or numerical coincidence? (artículo invitado)

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Proceedings of the 2nd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 511, 2000, pp. 71-82. (2000)

89. Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Microelectronics Relialibility 40, 1951-1954 (2000)

88. Frontiers in electronic noise: from submicron to nanostructures

- L. Reggiani, C. Pennetta, Gy. Trefán, J.C. Vaissiere, L. Varani, V. Gruzhinskis, A. Reklaitis, P. Shiktorov, E. Starikov, T. González, J. Mateos, D. Pardo and O. M. Bulashenko
- International Journal of High Speed Electronics and Systems 10, 111-117 (2000)

87. Monte Carlo simulator for the design optimization of low-noise HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
- IEEE Transactions on Electron Devices 47, 1950-1956 (2000)

86. Langevin forces and generalized transfer fields for noise modeling of deep submicron devices

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, and J. C. Vaissiere
- IEEE Transactions on Electron Devices 47, 1992-1998 (2000)

85. Microscopic analysis of generation-recombination noise in semiconductors under dc and time-varying electric fields

- S. Pérez, T. González, S. Delage, and J. Obregon
- Journal of Applied Physics 88, 800-807 (2000)

84. Monte Carlo investigation of shot-noise suppression in nondegenerate ballistic and diffusive transport regimes

- L. Reggiani, A. Reklaitis, T. González, J. Mateos, D. Pardo, and O. M. Bulashenko
- Australian Journal of Physics 53, 3-34 (2000)

83. Improved Monte Carlo algorithm for the simulation of d-doped AlInAs/GaInAs HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, H. Happy and A. Cappy
- IEEE Transactions on Electron Devices 47, 250-253 (2000)

82. Monte Carlo simulation of electronic noise in short channel d-doped AlInAs/GaInAs HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel and A. Cappy
- Proceedings of the 15th International Conference on Noise in Physical Systems and 1/f fluctuations, Bentham Press, 1999, pp. 279-282. (1999)

81. Effect of dimensionality on shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Proceedings of the 15th International Conference on Noise in Physical Systems and 1/f fluctuations, Bentham Press, 1999, pp. 134-137. (1999)

80. Monte Carlo analysis of static, dynamic and noise behavior of a recessed T-gate HEMT

- J. Mateos, T. González, and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1999, pp. 391-394. (1999)

79. Coulomb and Fermi suppression of shot noise in ballistic conductors

- T. González, J. Mateos, and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1999, pp. 333-336. (1999)

78. 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Proceedings of the 24th International Conference on the Physics of Semiconductors, 1998, World Scientific, 1999, ISBN 981-02-4030-9 (CD), n. 84. (1999)

77. Generalized transfer fields and Langevin forces for hot-carriers fluctuations in semiconductor submicron devices

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Reggiani, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos and D. Pardo
- Physica B 272, 260-262 (1999)

76. Joint effect of Fermi and Coulomb correlations on shot-noise suppression in ballistic conductors

- T. González, J. Mateos, D. Pardo and L. Reggiani
- Physica B 272, 285-287 (1999)

75. Thermal conductivity of nonequilibrium carriers in semiconductors

- L. Varani, P. Gaubert, J. C. Vaissiere, J. P. Nougier, J. Mateos, T. González, D. Pardo, L. Reggiani, E. Starikov, P. Shiktorov, and V. Gruzinskis
- Physica B 272, 247-249 (1999)

74. Shot-noise suppression in nondegenerate semiconductors: the role of an energý-dependent scattering time

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Physica B 272, 282-284 (1999)

73. Injection statistics simulator for dynamic analysis of noise in mesoscopic devices

- T. González, J. Mateos, D. Pardo, L. Varani, and L. Reggiani
- Semiconductor Science and Technology 14, L37-L40 (1999)

72. Effect of the T-gate on the performance of recessed HEMTs. A Monte Carlo analysis

- J. Mateos, T. González, D. Pardo, V. Hoel, and A. Cappy
- Semiconductor Science and Technology 14, 864-870 (1999)

71. González et al. Reply:

- T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Physical Review Letters 83, 1268 (1999) (1999)

70. Microscopic analysis of shot-noise suppression in nondegenerate diffusive conductors

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko, and L. Reggiani
- Physical Review B 60, 2670-2679 (1999)

69. Towards the Monte Carlo simulation of resonant tunneling diodes using time-dependent wavepackets and Bohm trejectories

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, J. Mateos, T. González, D. Pardo and O. Vanbesien
- Semiconductor Science and Technology 14, 532-542 (1999)

68. Spatio-temporal correlation of conduction current fluctuations within a hydrodynamic-Langevin scheme

- P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo, L. Reggiani, L. Varani, J. C. Vaissiere, and J. P. Nougier
- Applied Physics Letters 74, 723-725 (1999)

67. Hydrodynamic modeling of spatial cross-correlation of conduction current fluctuations

- P. Shiktorov, J. C. Vaissiere, L. Varani, J. P. Nougier, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
- Material Science Forum 297-298, 147-150 (1999)

66. Shot-noise suppression in nondegenerate conductors

- T. González
- Material Science Forum 297-298, 139-146 (1999)

65. Microscopic analysis of shot-noise suppression in nondegenerate ballistic transport

- T. González, J. Mateos, D. Pardo, O. M. Bulashenko and L. Reggiani
- Semiconductor Science and Technlolgy 13, 714-724 (1998)

64. Influence of the Al mole fraction on the noise performance of GaAs/AlxGa1-xAs HEMTs

- J. Mateos, D. Pardo, T. González, P. Tadyszak, F. Daneville and A. Cappy
- IEEE Transactions on Electron Devices 45, 2081-2083 (1998)

63. An acceleration fluctuation scheme for diffusion noise sources within a generalized impedance field method

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, T. González, J. Mateos, D. Pardo and L. Varani
- Physical Review B 57, 11866-11869 (1998)

62. Universality of the 1/3 shot-noise suppression factor in nondegenerate diffusive conductors

- T. González, C. González, J. Mateos, D. Pardo, L. Reggiani O. M. Bulashenko and J. M. Rubí
- Physical Review Letters 80, 2901-2904 (1998)

61. Noise analysis of 0.1 nm gate MESFETs and HEMTs

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Solid-State Electronics 42, 79-85 (1998)

60. Bohm trajectories for the Monte Carlo simulation of quantum-based devices

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
- Applied Physics Letters 72, 806-808 (1998)

59. Transfer impedance calculations of electronic noise in two-terminal n+nn+ structures

- E. Starikov, P. Shiktorov, V. Gruzinskis, L. Varani, J. C. Vaissiere, J. P. Nougier, T. González, J. Mateos, D. Pardo and L. Reggiani
- Journal of Applied Physics 83, 2052-2066 (1998)

58. Electron-number statistics and shot-noise suppression by Coulomb correlation in nondegenrate ballistic transport

- O. Bulashenko, J. Mateos, D. Pardo, T. González, L. Reggiani and J. M. Rubí
- Physical Review B 57, 1366-1369 (1998)

57. Microscopic description of diffusion noise sources

- P. Shiktorov, E. Starikov, V. Gruzinskis, L. Reggiani, C. Pennetta, T. González, J. Mateos, D. Pardo and L. Varani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 148-151. (1997)

56. Microscopic analysis of high-frequency noise spectra in submicron Schottky-barrier diodes

- T. González, D. Pardo, L. Reggiani and L. Varani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 160-163. (1997)

55. Shot-noise suppression in ballistic transport due to long-range Coulomb interaction

- T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
- Proceedings of the 14th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1997, pp. 289-292. (1997)

54. Simulación Monte Carlo de dispositivos de efecto túnel mediante trayectorias de Bohm

- X. Oriols, J.J. García-García, F. Martín, J. Suñé, T. González, J. Mateos y D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 463-468. (1997)

53. Análisis numérico y experimental de estructuras MESFET y HEMT sin puerta

- J. Mateos, T. González and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 197-202. (1997)

52. Simulación microscópica de propiedades de transporte y ruido electrónico en dispositivos semiconductores

- T. González, J. E. Velázquez, M. J. Martín, J. Mateos and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 445-450. (1997)

51. Thermal conductivity of hot electrons in Si

- P. Golinelli, R. Brunetti, L. Varani, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
- Proceedings of the 23rd International Conference on the Physics of Semiconductors, 1996, World Scientific, 1997, pp. 79-82. (1997)

50. Diffusion coefficient to characterize local noise sources in submicron devices, is it a good magnitude?

- T. González, J. Mateos, D. Pardo, V. Gruzinskis, E. Starikov and P. Shiktorov
- Proceedings of the 1st International Conference on Unsolved Problems of Noise, World Scientific, 1997, pp. 189-193. (1997)

49. Quantum Monte Carlo simulation of tunneling devices using Bohm trajectories

- X. Oriols, J. J. García-García, F. Martín, J. Suñé, T. González, J. Mateos and D. Pardo
- Physica Status Solidi (b) 204, 404-407 (1997)

48. Noise and transit time in ungated FET structures

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- IEEE Transactions on Electron Devices 44, 2128-2135 (1997)

47. On the spectral strength of the noise source entering the transfer impedance method

- P. Shiktorov, V. Gruzinskis, E. Starikov, T. González, J. Mateos, D. Pardo, L. Reggiani and L. Varani
- Applied Physics Letters 71, 3093-3095 (1997)

46. Shot-noise suppression in mesoscopic structures due to long-range Coulomb interaction

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Physica Status Solidi (b) 204, 450-452 (1997)

45. Hot-carrier thermal conductivity from the simulation of submicron semiconductor structures

- P. Golinelli, R. Brunetti, L. Varani, J. C. Vaissiere, J. P. Nougier, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
- Semiconductor Science and Technology 12, 1511-1513 (1997)

44. Effect of long-range Coulomb interaction on shot-noise suppression in ballistic transport

- T. González, O. Bulashenko, J. Mateos, D. Pardo and L. Reggiani
- Physical Review B 56, 6424-6427 (1997)

43. Microscopic analysis of electron noise in GaAs Schottky-barrier diodes.

- T. González, D. Pardo, L. Varani and L. Reggiani
- Journal of Applied Physics 82, 2349-2358 (1997)

42. Noise suppression due to long-range Coulomb interaction: Crossover between diffusive and ballistic transport regimes

- T. González, O. Bulashenko, J. Mateos, D. Pardo, L. Reggiani and J. M. Rubí
- Semiconductor Science and Technology 9, 1053-1056 (1997)

41. Bohm trajectories for the modeling of tunneling devices

- J. Suñé, X. Oriols, J. J. García-García, F. Martín, T. González, J. Mateos and D. Pardo
- Microelectronic Engineering 36, 125-128 (1997)

40. Monte Carlo analysis of electronic noise in semiconductor materials an devices

- L. Reggiani, P. Golinelli, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Microelectronics Journal 28, 183-198 (1997)

39. Advances in noise modelling of high-field transport in semiconductor materials and devices

- L. Reggiani, P. Golinelli, A. Greiner, C. Pennetta, V. Gruzinskis, E. Starikov, P. Shiktorov, L. Varani, J. C. Vaissiere, J. P. Nougier, D. Pardo, T. González, M. J. Martín and J. E. Velázquez
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 89-95 (1996)

38. Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

- P. Tadyszak, F. Daneville, A. Cappy, J. Mateos, T. González and D. Pardo
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 159-164. (1996)

37. Transit-time and noise performance of ungated MESFETs and HEMTs

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 171-176. (1996)

36. Hydrodinamic modelling of transport and noise spectra in n+nn+ semiconductor structures

- L. Reggiani, P. Shiktorov, V. Gruzinskis, E. Starikov, L. Varani, T. González, M. J. Martín and D. Pardo
- Proceedings of the 26th European Solid State Device Research Conference, Editions Frontieres, 1996, pp. 295-298. (1996)

35. Influence of real-space transfer on transit time and noise in HEMTs

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Proceedings of the 26th European Solid State Device Research Conference, Editions Frontieres, 1996, pp. 745-748. (1996)

34. Numerical and experimental analysis of static characteristics and noise in ungated recessed MESFET structures

- J. Mateos, T. González, D. Pardo, P. Tadyszak, F. Daneville and A. Cappy
- Solid-State Electronics 39, 1629-1636 (1996)

33. Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometer n+nn+ Silicon structures

- E. Starikov, P. Shiktorov, V. Gruzinskis, T. González, M. J. Martín, D. Pardo, L. Reggiani and L. Varani
- Semiconductor Science and Technology 11, 865-872 (1996)

32. Physical models of ohmic contact for Monte Carlo device simulation

- T. González and D. Pardo
- Solid-State Electronics 39, 555-562 (1996)

31. Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm

- M. J. Martín, T. González, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 11, 380-387 (1996)

30. Monte Carlo analysis of the behavior and spatial origin electronic noise in GaAs MESFETs

- T. González, D. Pardo, L. Varani, and L. Reggiani
- IEEE Transactions on Electron Devices 42, 991-997 (1995)

29. Monte Carlo determination of the intrinsic small-signal equivalent circuit of MESFETs

- T. González and D. Pardo
- IEEE Transactions on Electron Devices 42, 605-611 (1995)

28. Microscopic theory of electronic noise in semiconductor materials an devices (artículo invitado)

- L. Reggiani, P. Golinelli, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Proceedings of the 20th International Conference on Microelectronics, IEEE, 1995, vol. 2, pp. 633-637. (1995)

27. Spatial correlation between local diffusion noise sources in GaAs

- J. Mateos, T. González and D. Pardo
- Proceedings of the 13th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1995, pp. 181-184. (1995)

26. Plasma and transit-time effects on electronic noise in semiconductor n+nn+ structures (artículo invitado)

- L. Reggiani, P. Golinelli, E. Faucher, L. Varani, T. González and D. Pardo
- Proceedings of the 13th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 1995, pp. 163-168. (1995)

25. Analytical and numerical modelling of current fluctuations in semiconductor ballistic transport

- L. Reggiani, L. Varani, T. González, D. Pardo and T. Kuhn
- Proceedings of the 22nd International Conference on the Physics of Semiconductors, World Scientific, 1995, pp. 1963-1966. (1995)

24. Diagonal and off-diagonal contributions to current noise in semiconductor unipolar structures

- T. González, D. Pardo, L. Reggiani and L. Varani
- Proceedings of the 22nd International Conference on the Physics of Semiconductors, World Scientific, 1995, pp. 77-80. (1995)

23. High frequency noise spectra in semiconductor materials and devices

- L. Reggiani, L. Varani, T. González, D. Pardo, E. Starikov, P. Shiktorov and V. Gruzinskis
- Lithuanian Journal of Physics 35, 395-403 (1995)

22. Influence of spatial correlations on the analysis of diffusion noise in submicron semiconductor structures

- J. Mateos, T. González and D. Pardo
- Applied Physics Letters 67, 685-687 (1995)

21. Theory of electronic noise in semiconductor materials and devices.

- L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
- Il Vuoto, Scienza e Tecnologia 24, 64-68 (1995)

20. Spatial extent of the correlation between local diffusion noise sources in GaAs

- J. Mateos, T. González and D. Pardo
- Journal of Applied Physics 77, 1564-1568 (1995)

19. Microscopic simulation of electronic noise in semicoductor unipolar structures

- L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
- Proceedings of the Third International Worshop on Computational Electronics, Oregon State University, 1994, pp. 29-32. (1994)

18. Monte Carlo simulation of electronic noise in MESFETs

- T. González, D. Pardo, L. Varani and L. Reggiani
- Proceedings of the 1994 Gallium Arsenide Applications Symposium, Politecnico di Torino - IEEE MTT Society, 1994, pp. 385-388. (1994)

17. Microscopic simulation of electronic noise in semiconductor materials and devices (artículo invitado)

- L. Varani, L. Reggiani, T. Kuhn, T. González and D. Pardo
- IEEE Transactions on Electron Devices ED-41, 1916-1925 (1994)

16. One-dimensional Monte Carlo analysis of electron transport in submicron silicon structures

- M. J. Martín, T. González, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 9, 1316-1323 (1994)

15. Hot-carrier fluctuations from ballistic to diffusive regimes in submicron semiconductor structures

- L. Varani, L. Reggiani, P. Houlet, J. C. Vaissière, J. P. Nougier, T. Kuhn, T. González and D. Pardo
- Semiconductor Science and Technology 9, 584-587 (1994)

14. A microscopic interpretation of hot-electron noise in Schottky-barrier diodes

- T. González, D. Pardo, L. Varani and L. Reggiani
- Semiconductor Science and Technology 9, 580-583 (1994)

13. The microscopic interpretation of electron noise in Schottky-barrier diodes

- T. González, D. Pardo, L. Varani and L. Reggiani
- Proceedings of the 23rd European Solid State Device Research Conference, Editions Frontiers, 1993, pp. 115-118. (1993)

12. Monte Carlo analysis of voltage fluctuations in two-terminal semiconductor devices

- T. González, D. Pardo, L. Varani and L. Reggiani
- Simulation of Semiconductor Devices and Processes Vol. 5, Springer-Verlag, 1993, pp. 193-196. (1993)

11. Number and current fluctuations in submicron semiconductor structures

- L. Varani, L. Reggiani, T. Kuhn, P. Houlet, J. C. Vaissiere, J. P. Nougier, T. González and D. Pardo
- Noise in Physical Systems and 1/f fluctuations, AIP Conference Proceedings 285, 1993, pp. 329-332. (1993)

10. Spatial analysis of voltage fluctuations in semiconductor n+nn+ structures

- T. González, D. Pardo, L. Varani and L. Reggiani
- Noise in Physical Systems and 1/f fluctuations, AIP Conference Proceedings 285, 1993, pp. 220-223. (1993)

9. Simulación de estructuras n+nn+ submicrométricas de GaAs e InP. Influencia de los modelos de las bandas de conducción

- T. González, J. E. Velázquez y D. Pardo
- Microelectrónica 92: Tecnologías, Diseño, Aplicaciones, Universidad de Cantabria, 1993, pp. 100-102. (1993)

8. Monte Carlo analysis of noise spectra in Schottky-barrier diodes

- T. González, D. Pardo, L. Varani and L. Reggiani
- Applied Physics Letters 63, 3040-3042 (1993)

7. Simulation of electron transport in Silicon: impact-ionization processes

- M. J. Martín, T. González, J. E. Velázquez and D. Pardo
- Semiconductor Science and Technology 8, 1291-1297 (1993)

6. Spatial analysis of electronic noise in submicron semiconductor structures

- T. González, D. Pardo, L. Varani and L. Reggiani
- Applied Physics Letters 63, 84-86 (1993)

5. Ensemble Monte Carlo with Poisson solver for the study of current fluctuations in homogeneous GaAs structures

- T. González and D. Pardo
- Journal of Applied Physics 73, 7453-7464 (1993)

4. Electron transport in InP under high electric field conditions

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Semiconductor Science and Technology 7, 31-36 (1992)

3. Analysis of the transient spectral density of velocity fluctuations in GaAs and InP

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Journal of Applied Physics 72, 2322-2330 (1992)

2. Monte-Carlo analysis of the transient spectral density of velocity fluctuations in semiconductors

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Applied Physics Letters 60, 613-615 (1992)

1. Five-valley model for the study of electron transport properties at very high electric fields in GaAs

- T. González, J. E. Velázquez, P. M. Gutiérrez, and D. Pardo
- Semiconductor Science and Technology 6, 862-871 (1991)