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96. Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: Degeneracy and screening

- J. M. Iglesias, A. Nardone, R. Rengel, K. Kalna, M. J. Martín, and E. Pascual
- 2D Materials 14, 025011 (2023)

95. High-order harmonic generation in 2D transition metal disulphides

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Applied Physics Letters 119, 012101 (2021)

94. Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence

- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Materials 14, 5108 (2021)

93. Monte Carlo study of noise velocity fluctuations and microscopic carrier transport in monolayer transition metal dichalcogenides

- R. Rengel, O. Castelló, E. Pascual, M. J. Martín, and J. M. Iglesias
- Journal of Physics D: Applied Physics 59, 395102 (2020)

92. Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Physica E: Low-dimensional Systems and Nanostructures 123, 114211 (2020)

91. Electronic transport and noise characterization in MoS2

- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 35, 055021 (2020)

90. Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

- R. Rengel, E. Pascual, I. Íñiguez-de-la-Torre, M. J. Martín, and B. G. Vasallo
- Journal of Science Education and Technology 28, 445 (2019)

89. Interband scattering-induced ambipolar transport in graphene

- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 34, 065011 (2019)

88. Impact of the hot phonon effect on electronic transport in monolayer silicene

- E. M. Hamham, J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Journal of Physics D: Applied Physics 51, 415102 (2018)

87. Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport

- R. Rengel, J. M. Iglesias, E. M. Hamham, and M. J. Martín
- Semiconductor Science and Technology 33, 065011 (2018)

86. Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Surface Science 424, 52-57 (2017)

85. Interplay of out-of-equilibrium phonons and self-heating under high field transport conditions in graphene

- J. M. Iglesias, R. Rengel, Hamham E. M., E. Pascual and M. J. Martín
- Journal of Physics D: Applied Physics 50, 305101 (2017)

84. Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor

- P. C. Feijoo, F. Pasadas, J. M. Iglesias, M. J. Martín, R. Rengel, C. Li, W. Kim, J. Riikonen, H. Lipsanen and D. Jiménez
- Nanotechnology 28, 485203 (2017)

83. A balance equations approach for the study of the dynamic response and electronic noise in graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Applied Physics 121, 185705 (2017)

82. Noise temperature in graphene at high frequencies

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Semiconductor Science and Technology 31, 075001 [1-6] (2016)

81. Spectral density of velocity fluctuations under switching field conditions in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Statistical Mechanics: Theory and Experiment 2016, 054018 [1 8] (2016)

80. Hot carrier and hot phonon coupling during ultrafast relaxation of photoexcited electrons in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Physics Letters 108, 043105 (2016)

79. Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087481 (2015)

78. Monte Carlo modeling of mobility and microscopic charge transport in supported graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087445 (2015)

77. Effect of charged impurity scattering on the electron diffusivity and mobility in graphene

- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Physics: Conference Series 647, 012046 [1-4] (2015)

76. Carrier-carrier and carrier-phonon interactions in the dynamics of photoexcited electrons in graphene

- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Physics: Conference Series 647, 012003 (2015)

75. Monte Carlo Study of Dopant-Segregated Schottky Barrier SoI MOSFETs: Enhancement of the RF Performance

- M. J. Martín, C. Couso, E. Pascual and R. Rengel
- IEEE Transactions on Electron Devices 99, 3955 (2014)

74. Influence of the substrate on the diffusion coefficient and the momentum relaxation in graphene: The role of surface polar phonons

- R. Rengel, E. Pascual and M. J. Martín
- Applied Physics Letters 104, 233107 (2014)

73. Harmonic distortion in laterally asymmetric channel metal-oxide-semiconductor field-effect transistors operating in the linear regime

- R. Rengel and M. J. Martín
- International Journal of Numerical Modelling 27, 792 (2014)

72. Space quantization effects in Double Gate SB-MOSFETs: role of the active layer thickness

- J. S. García, M. J. Martín and R. Rengel
- 2013 Spanish Conference on Electron Devices, 2013, pp. 59-62 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481342 (2013)

71. A Monte Carlo Study of Electron Transport in Suspended Monolayer Graphene

- R. Rengel, C. Couso and M. J. Martín
- 2013 Spanish Conference on Electron Devices, 2013, pp. 175-178 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481371 (2013)

70. Velocity and momentum fluctuations in Suspended Monolayer Graphene

- M. J. Martín, C. Couso and R. Rengel
- 22th International Conference on Noise and Fluctuations, 2013, pp. 1-4 ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578933 (2013)

69. Diffusion coefficient, correlation function and power spectral density of velocity fluctuations in monolayer graphene

- R. Rengel, and M. J. Martín
- Journal of Applied Physics 114, 143702 (2013)

68. Effect of the dopant segregation layer on the static characteristics of Schottky-Barrier n-MOSFETs

- C. Couso, E. Pascual, J. M. Galeote, M. J. Martín and R. Rengel
- 8th Internacional Caribbean Conferencia on Devices, Circuits and Systems (ICCDCS 2012), 2012, pp. 1-4 ISBN: 978-1-4577-1116-9 , DOI: 10.1109/ICCDCS.2012.6188919 (2012)

67. RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs

- M. J. Martín, E. Pascual and R. Rengel
- Solid-State Electronics 73, 64–73 (2012)

66. Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs

- M. J. Martin, R. Rengel, J. M. Galeote, M. de Souza, and M. A. Pavanello
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #134 (2011)

65. A Monte Carlo model for the study of n-type strained Silicon Schottky Diodes

- J. M. Galeote, R. Rengel, E. Pascual, and M. J. Martín
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #121 (2011)

64. Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs

- R. Rengel, M. J. Martín and F. Danneville,
- IEEE Electron Device Letters 32, 72-74 (2011)

63. Electronic transport in Laterally Asymmetric Channel MOSFET for RF analog applications

- R. Rengel and M. J. Martín
- IEEE Transactions on Electron Devices 57, 2448-2454 (2010)

62. Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis

- E. Pascual, R. Rengel and M. J. Martín
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 329-332 (2009)

61. Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study

- E. Pascual, R. Rengel and M. J. Martín
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 108-111. (2009)

60. Comparative study of laterally asymmetric channel and conventional MOSFETs

- R. Rengel, M. J. Martín and F. Danneville
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 96-99. (2009)

59. Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research

- E. Pascual , M. J. Martín , R. Rengel, G. Larrieu and E. Dubois
- Semiconductor Science and Technology 24, 025022 [1-6] (2009)

58. Onset of quasi-ballistic transport and mobility degradation in ultra scaled MOSFETs: A Monte Carlo study

- M. J. Martín, R. Rengel, E. Pascual, J. £usakowski, W. Knap and T. González
- Physica Status Solidi (c) 5, 123-126 (2008)

57. A Monte Carlo investigation of carrier transport in fabricated back-to-back Schottky diodes: Influence of direct quantum tunnelling and temperature

- E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M. J. Martín
- Physica Status Solidi (c) 5, 119-122 (2008)

56. RF noise and scaling in nanometer SOI MOSFETs: influence of quasiballistic transport

- M. J. Martín, R. Rengel, E. Pascual and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 99-102 (2007)

55. Monte Carlo analysis of quantum tunnelling and thermionic transport in a reverse biased Schottky diode

- E. Pascual, R. Rengel y M. J. Martín
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 108-111 (2007)

54. Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

- M. J. Martín, R. Rengel, E. Pascual and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 340-343 (2007)

53. Quasi ballistic transport in nanometer Si metal-oxide-semiconductor field-effect transitors: experimental and Monte Carlo analysis

- J. Lusakowski, M. J. Martín, R. Rengel, T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf and T. Skotnicki
- Journal of Applied Physics 101, 114511 and Virtual Journal of Nanoscale Science & Technology 15 [25] (2007)

52. Microscopic modelling of reverse biased Schottky diodes: influence of non-equilibrium transport phenomena

- E. Pascual, R. Rengel and M. J. Martín
- Semiconductor Science and Technology 22, 1003-1009 (2007)

51. Injected Current and Quantum Transmission Coefficient in Low Schottky Barriers: WKB and Airy Approaches

- R. Rengel, E. Pascual and M. J. Martín
- IEEE Electron Device Letters 28, 171-173 (2007)

50. Transit time and velocity distribution functions in decananometer gate-length SOI MOSFETs

- M. J. Martín and Raúl Rengel
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 305-308 (2006)

49. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

- R. Rengel, T. González, J. Mateos, D. Pardo, G. Dambrine, F. Danneville, J. P. Raskin and M. J. Martín
- IEEE Transactions on Electron Devices 53, 523-532 (2006)

48. A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs

- R. Rengel, M. J. Martín, G. Dambrine and F. Danneville
- Semiconductor Science and Technology 21, 273-278 (2006)

47. Statistical investigation of electronic transport in decananometer gatelength SOI MOSFETs

- M. J. Martín and R. Rengel
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

46. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

- R. Rengel, J. Mateos, T. González, D. Pardo, G. Dambrine, F. Danneville and M. J. Martín
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.497-502 (2005)

45. On the high-frequency noise figures of merit and microscopic channel noise sources in fabricated 90 nm PD SOI MOSFETs

- R. Rengel, M. J. Martín, G. Pailloncy, G. Dambrine and F. Danneville
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 745-748. (2005)

44. Monte Carlo characterization of fabricated Partially-Depleted SOI MOSFETs: high-frequency performance

- R. Rengel, M. J. Martín, G. Pailloncy, G. Dambrine, and F. Danneville
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-085(1-4) (2005)

43. Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs

- R. Rengel, D. Pardo, and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 96-106 (2004)

42. Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise

- R. Rengel, T. González and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 519-528. (2004)

41. On the influence of space-quantization effects on the RF noise behavior of DG MOSFETs

- R. Rengel, T. González and M. J. Martín
- Fluctuation and Noise Letters 4, L561-L569 (2004)

40. Microscopic analysis of the high-frequency noise behavior of fabricated Fully-Depleted SOI MOSFETs

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 585-588. (2003)

39. High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 379-386. (2003)

38. Comparative study of the dynamic performance of bulk and FDSOI MOSFET by means of a Monte Carlo simulation

- R. Rengel, D. Pardo and M. J. Martín
- 2003-05 Silicon-on-Insulator Technology and Devices, The Electrochemical Society, 2003, pp. 283-286 (2003)

37. Monte Carlo simulation of noise in electronic devices: limitations and perspectives (artículo invitado)

- T. González, J. Mateos, M. J. Martín-Martínez, S. Pérez, R. Rengel, B. G. Vasallo and D. Pardo
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 496-503. (2003)

36. Impact of downscaling on dynamic and noise parameters of submicron MOSFETs

- R. Rengel, D. Pardo and M. J. Martín
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, II-07(1-4) (2003)

35. Dynamic and noise behavior of short-gate FDSOI MOSFETs: numerical and experimental analysis

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-07(1-4) (2003)

34. Numerical and experimental study of a 0.25 µm Fully-Depleted Silicon-on-Insulator MOSFET: static and dynamic RF behaviour

- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville, and J.-P. Raskin
- Semiconductor Science and Technology 17, 1149-1156 (2002)

33. RF noise in a short-channel n-MOSFET: a Monte Carlo study

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Material Science Forum 384-385, 155-158 (2002)

32. Influence of high-injection conditions on the noise behavior in Si BJTs and SiGe HBTs at RF frequencies

- M. J. Martín, T. González, and D. Pardo
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 145-148. (2001)

31. Monte Carlo analysis of a 0.3 µm gate length MOSFET

- R. Rengel, M. J. Martín y D. Pardo
- Actas de la 3ª Conferencia De Dispositivos Electrónicos, 2001, pp.21-24 (2001)

30. Comparative analysis of current fluctuations in Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez T. González, and D. Pardo
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1761-1762. (2001)

29. Monte Carlo analysis of dynamic and noise performance of submicron MOSFET at RF and microwave frequencies

- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Semiconductor Science and Technology 16, 939-946 (2001)

28. Monte Carlo analysis of the noise behavior in Si BJT’s and SiGe HBT’s at RF frequencies

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Journal of Applied Physics 90, 1582-1588 (2001)

27. High Injection Effects on Noise Characteristics of Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez, S. Pérez, D. Pardo, and T. González
- Microelectronics Reliability 41, 847-854 (2001)

26. An ionised-impurity scattering model for 3-D Monte Carlo device simulation with discrete impurity distribution

- S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martín y J.E. Velázquez
- VLSI Design 13, 399-404 (2001)

25. Physically based comparison of current noise analysis of Si BJT’s and SiGe HBT’s.

- M. J. Martín y D. Pardo
- Proceedings of the 30th European Solid-State Device Research Conference, Editions Frontieres, 2000, pp. 148-151 (2000)

24. Microscopic analysis of the influence of Ge profiles on the current-noise operation mode of n-Si/p-Si1-x,Gex heterostructures

- M. J. Martín, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 15, 277-285 (2000)

23. Microscopic analysis of voltage noise operation mode in SiGe/Si bipolar heterojunctions: Influence of the SiGe strained layer

- M. J. Martín, D. Pardo and J. E. Velázquez
- Journal of Applied Physics 88, 1511 (2000)

22. Microscopic analysis of the influence of high doping and strain on electron transport in SiGe/Si and Si/SiGe

- R. Rengel Estévez, J. E. Velázquez and M. J. Martín.
- Actas de la 2ª Conferencia De Dispositivos Electrónicos, 1999, pp.167-170. (1999)

21. 2D Monte Carlo comparison of bipolar transport and current fluctuations at the onset of quasi-saturation of a Si BJT and a Si/Si1-xGex/Si HBT

- M. J. Martín, D. Pardo and J. E. Velázquez,
- Actas de la 2ª Conferencia De Dispositivos Electrónicos, 1999, pp.175-179. (1999)

20. SiGe HBT RF technology for mobile communications : active filters based on bandpass amplifiers

- M. J. Martín and J. L Tauritz
- Proceedings of XIII Conference on Design of Circuits an Integrated Systems , Universitat de les Illes Balears, 1999, pp: 39-43. (1999)

19. 2D bipolar Monte Carlo calculation of current fluctuations at the onset of quasisaturation of a Si BJT

- M. J. Martín, D. Pardo and J. E. Velázquez
- Physica B 272, 260-262 (1999)

18. Microscopic sudy of the influence of SiGe strained layer on voltage noise performance in SiGe/Si bipolar heterojunctions

- M. J. Martín and J. E. Velazquez
- Proceedings of XIII Conference on Design of Circuits an Integrated Systems, Copy Red, 1998, pp. 90-95. (1998)

17. 1.8 GHz active microwave filter realized in SiGe for mobile communications

- M. J. Martín, L. C. N. de Vreede, and J. L. Tauritz
- Proceedings of XIII Conference on Design of Circuits an Integrated Systems, Copy Red, 1998, pp. 136-139. (1998)

16. Active microwave filters realized in SiGe technology

- M. J. Martín, L. C. N. de Vreede and J. L. Tauritz
- Proceedings of 28th European Microwave Conference, Miller Freeman, 1998, pp. W- B15 (1998)

15. Filtros MMIC activos realizados en tecnología HBT de SiGe para comunicaciones móviles.

- M. J. Martín and J. Tauritz
- Proceedings del XIII Simposium Nacional. Unión Científica Internacional de Radio, Ediciones Iberdrola Instituto Tecnológico, 1998, pp. 187-8 (1998)

14. Microscopic analysis of the influence of strain and bandgap offsets on noise performance in SiGe/Si heterojunctions

- M. J. Martín, D. Pardo and J. E. Velázquez
- Journal of Applied Physics 84, 5012-5020 (1998)

13. Simulación microscópica de propiedades de transporte y ruido electrónico en dispositivos semiconductores

- T. González, J. E. Velázquez, M. J. Martín, J. Mateos and D. Pardo
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 445-450. (1997)

12. Estudio Monte Carlo del ruido en heterouniones Si/Si1-x Gex

- M. J. Martín, D. Pardo and J. E. Velázquez
- Actas de la Conferencia de Dispositivos Electrónicos 1997, Servicio de Publicaciones de la UPC, pp. 35-40. (1997)

11. Thermal conductivity of hot electrons in Si

- P. Golinelli, R. Brunetti, L. Varani, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
- Proceedings of the 23rd International Conference on the Physics of Semiconductors, 1996, World Scientific, 1997, pp. 79-82. (1997)

10. Monte Carlo comparative study of current-mode noise in Si/Si1-XGex strained heterojunctions

- M. J. Martín, D. Pardo and J.E. Velázquez
- Proceedings of the 27th European Solid-State Device Research Conference, Editions Frontieres, 1997, pp. 340-343. (1997)

9. Analysis of voltage noise in forward-biased Silicon bipolar homojunctions: low and high injection regimes

- M. J. Martín, D. Pardo and J. E. Velázquez
- Applied Physics Letters 71, 3382-3384 (1997)

8. Hot-carrier thermal conductivity from the simulation of submicron semiconductor structures

- P. Golinelli, R. Brunetti, L. Varani, J. C. Vaissiere, J. P. Nougier, L. Reggiani, E. Starikov, P. Shiktorov, V. Gruzinskis T. González, M. J. Martín and D. Pardo
- Semiconductor Science and Technology 12, 1511-1513 (1997)

7. Advances in noise modelling of high-field transport in semiconductor materials and devices

- L. Reggiani, P. Golinelli, A. Greiner, C. Pennetta, V. Gruzinskis, E. Starikov, P. Shiktorov, L. Varani, J. C. Vaissiere, J. P. Nougier, D. Pardo, T. González, M. J. Martín and J. E. Velázquez
- Proceedings of the Third ELEN Workshop, IMEC, 1996, pp. 89-95 (1996)

6. Hydrodinamic modelling of transport and noise spectra in n+nn+ semiconductor structures

- L. Reggiani, P. Shiktorov, V. Gruzinskis, E. Starikov, L. Varani, T. González, M. J. Martín and D. Pardo
- Proceedings of the 26th European Solid State Device Research Conference, Editions Frontieres, 1996, pp. 295-298. (1996)

5. Analysis of current fluctuations in Silicon p+n and n+p homojunctions

- M. J. Martín, D. Pardo and J. E. Velázquez
- Journal of Applied Physics. 79, 6975-6981 (1996)

4. Hydrodynamic and Monte Carlo simulation of steady-state transport and noise in submicrometer n+nn+ Silicon structures

- E. Starikov, P. Shiktorov, V. Gruzinskis, T. González, M. J. Martín, D. Pardo, L. Reggiani and L. Varani
- Semiconductor Science and Technology 11, 865-872 (1996)

3. Monte Carlo analysis of a Schottky diode with an automatic space-variable charge algorithm

- M. J. Martín, T. González, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 11, 380-387 (1996)

2. One-dimensional Monte Carlo analysis of electron transport in submicron silicon structures

- M. J. Martín, T. González, D. Pardo and J. E. Velázquez
- Semiconductor Science and Technology 9, 1316-1323 (1994)

1. Simulation of electron transport in Silicon: impact-ionization processes

- M. J. Martín, T. González, J. E. Velázquez and D. Pardo
- Semiconductor Science and Technology 8, 1291-1297 (1993)