Ignacio Iñiguez de la Torre Mulas

Associate Professor

Ignacio Iñiguez de la Torre Mulas

Associate Professor
indy@usal.es
+34 666 666 666
http://diarium.usal.es/indy/
Researcher ID: B-2740-2013


About


Ignacio Iñiguez de la Torre was born in Valladolid, Spain, in 1981. He graduated in physics from the University of Salamanca in 2004, where he received the Ph.D. degree in physics in 2008.

He spent three months at the Institut d’Electronique, de Microélectronique et de Nanotechnologies (IEMN), France in 2007 and another three moths in the School of Electrical and Electronic Engineering in the University of Manchester, United Kingdom in 2008. He worked for one year 2009-2010 in the Department of Electrical and Computer Engineering at the University of Massachusetts in Lowell as a Postdoctoral Research Fellow. Then, he joined the Electronics Group of the Department of Applied Physics at the University of Salamanca, first during 2010-2011 with a Postdoc contract in the EU project ROOTHz, later from 2011-2017 as a Lecturer and currently since July 2017 as an Associate Professor.

His main research interest is in the development of novel device concepts for terahertz (THz) data processing, detection and emission using both narrow and wide bandgap III-V semiconductors.

Articles Published


78. Small-signal equivalent circuit model of GaN-based nanodiodes at low temperature including trap-related low frequency dispersion

- E. Pérez-Martín, T. González, I. Íñiguez-de-la-Torre, and J. Mateos
- Journal of Applied Physics 135, 044502 (2024)

77. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

- B. Orfao, M. Abou Daher, R. A. Peña, B. G. Vasallo, S. Pérez, I. Íñiguez-de-la-Torre, G. Paz-Martínez, J. Mateos, Y. Roelens, M. Zaknoune, and T. González
- Journal of Applied Physics 135, 014501 (2024)

76. A closed-form expression for the frequency dependent microwave responsivity of transistors based on the I-V curve and S-parameters

- G. Paz-Martínez, P. Artillan, J. Mateos, E. Rochefeuille, T. González, and I. Íñiguez-de-la-Torre
- IEEE Transactions on Microwave Theory and Techniques 72, 415-420 (2024)

75. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, P. Artillan, H. Sánchez-Martín, S. García-Sánchez, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques (2023)

74. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

- I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, and J. Mateos
- Applied Physics Letters 123, 123503 (2023)

73. Low temperature memory effects in AlGaN/GaN nanochannels

- H. Sánchez-Martín, E. Pérez-Martín, G. Paz-Martínez, J. Mateos, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 123, 103505 (2023)

72. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

- E. Pérez-Martín, H. Sánchez-Martín, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 34, 325201 (2023)

71. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

- S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 3447 (2023)

70. Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

- R. Paul, V. Conti, M. Zamani, S. Escobar-Steinvall, H. Sánchez-Martín, C. Gastaldi, M. A. Ionescu, I. Íñiguez-de-la-Torre, M. Dimitrievska, A. Fontcuberta, and V. Piazza
- Solar Energy Materials and Solar Cells 252, 112194 (2023)

69. Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques 71, 3126 (2023)

68. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

- G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, and J. Mateos
- Journal of Applied Physics 132, 134501 (2022)

67. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

- H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
- Solid-State Electronics 193, 108289 (2022)

66. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos and T. González
- Sensors 22, 1515 (2022)

65. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 69, 514 (2022)

64. Monte Carlo analysis of the influence of surface charges on GaN asymmetric nanochannels: Bias and temperature dependence

- E. Pérez-Martín, I. Íñiguez-de-la-Torre, C. Gaquière, T. González, and J. Mateos
- Journal of Applied Physics 10, 104501 (2021)

63. Temperature behavior of Gunn oscillations in planar InGaAs diodes

- J. A. Novoa-López, G. Paz-Martínez, H. Sánchez-Martín, Y. Lechaux, I. Íñiguez-de-la-Torre, T. González, and J. Mateos
- IEEE Electron Device Letters 42, 1136 (2021)

62. Non-linear thermal resistance model for the simulation of high power GaN-based devices

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
- Semiconductor Science and Technology 36, 055002 (2021)

61. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

- E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
- Microelectronics Reliability 114, 113806 (2020)

60. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

- Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
- Smiconductor Science and Technology 35, 115009 (2020)

59. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

- E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 31, 405204 (2020)

58. Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

- R. Rengel, E. Pascual, I. Íñiguez-de-la-Torre, M. J. Martín, and B. G. Vasallo
- Journal of Science Education and Technology 28, 445 (2019)

57. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

- H. Sánchez-Martín, S. Sánchez-Martín, I. Íñiguez-de-la-Torre , S. Pérez, J. A. Novoa , G. Ducournau, B. Grimbert, C. Gaquière, T. González and J. Mateos
- Semiconductor Science and Technology 33, 095016 (2018)

56. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

- H. Sánchez-Martín, J. Mateos, J. A. Novoa, J. A. Delgado-Notario, Y. M. Meziani, S. Pérez, H. Theveneau, G. Ducournau, C. Gaquière, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 113, 043504 (2018)

55. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

- H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Semiconductor Science and Technology 32, 035011 [1-8] (2017)

54. Design and analysis of high performance ballistic nanodevice-based sequential circuits using Monte Carlo and Verilog AMS simulations

- P. Marthi, N. Hossain, H. Wang, J.-F. Millithaler, M. Margala, I. Iñiguez-de-la-Torre, J. Mateos, and T. González
- IEEE Transactions on Circuits and Systems I: Regular Papers 63, 2236-2244 (2016)

53. Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
- Semiconductor Science and Technology 31, 065005 [1-9] (2016)

52. Room temperature direct and heterodyne detection of 0.28 to 0.69 THz waves based on GaN 2DEG unipolar nanochannels

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González.
- IEEE Transactions on Electron Devices 63, 353- 359 (2016)

51. Experimental verification of low-frequency noise effects at the onset of oscillations in planar Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- 2015 International Conference on Noise and Fluctuations, ICNF 2015 DOI: 10.1109/ICNF.2015.7288553 (2015)

50. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087474 (2015)

49. Anomalous low-frequency noise Increase at the onset of oscillations in Gunn diodes

- Ó. García-Pérez, Y. Alimi, A. Song, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087504 (2015)

48. Fabrication and characterization of fully transparent ZnO thin-film transistors and self-switching nano-diodes

- Y. Sun, K. Ashida, S. Sasaki, M. Koyama, T. Maemoto, S. Sasa, S. Kasai, I. Íñiguez-de-la-Torre, and T. González
- Journal of Physics: Conference Series 647, 012068 [1-4] (2015)

47. Optimization of ballistic deflection transistors by Monte Carlo simulations

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Journal of Physics: Conference Series 647, 012066 [1-4] (2015)

46. Temperature and surface traps influence on the THz emission from InGaAs diodes

- A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
- Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

45. Ultra-high responsivity of optically-active semiconducting asymmetric nano-channel diodes

- Y. Akbas, A. Stern, L. Q. Zhang, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, J. Mateos, T. González, G. Wicks, and R. Sobolewski
- Journal of Physics: Conference Series 647, 012013 [1-4] (2015)

44. 0.69 THz room temperature terahertz heterodyne detection using unipolar nanodiodes

- C. Daher, J. Torres, I. Iñiguez-de-la-Torre, P. Nouvel, L. Varani, P. Sangare, G. Ducournau, C. Gaquière, J. Mateos, and T. González
- Journal of Physics: Conference Series 647, 012006 (2015)

43. Study of surface charges in ballistic deflection transistors

- J.-F. Millithaler, I. Iñiguez-de-la-Torre, J. Mateos, T. González, and M. Margala
- Nanotechnology 26, 485202 [1-6] (2015)

42. Phonon balck-body radiation limit for heat dissipation in electronics

- J. Schleeh, J. Mateos, I. Íñiguez-de-la-Torre, N. Wadefalk, P. A. Nilsson, J. Grahn and A. J. Minnich
- Nature Materials 14, 187-192 (2015) (2015)

41. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

- A. Westlund, P. Sangaré, G. Ducournau, I. Iñiguez-de-la-Torre, P. A. Nilsson, C. Gaquière, L. Desplanque, X. Wallart, J. F. Millithaler, T. González, J. Mateos and J. Grahn
- Solid-State Electronics 104, 79-85 (2015)

40. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

- S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
- Semiconductor Science and Technology 30, 035001 [1-8] (2015)

39. Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. Gonzalez and J. Mateos
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865816 (2014)

38. Operation of GaN planar nanodiodes as THz detectors and mixers

- I. Iñiguez-de-la-Torre, C. Daher, J.-F. Millithaler, J. Torres, P. Nouvel, L. Varani, P. Sangaré, G. Ducournau, C. Gaquière, T. Gonzalez and J. Mateos
- IEEE Transactions on Terahertz Science and Technology 4, 670-677 (2014)

37. Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos
- Semiconductor Science and Technology 29, 115032 [1-9] (2014)

36. Experimental assessment of anomalous low-frequency noise increase at the onset of Gunn oscillations in InGaAs planar diodes

- O. García-Pérez, Y. Alimi, A. M. Song, I. Iñiguez-de-la-Torre, S. Pérez, J. Mateos and T. González
- Applied Physics Letters 105, 113502 [1-4] (2014)

35. On the effect of d-doping in self-switching diodes

- A. Westlund, I. Iñiguez-de-la-Torre, P. A. Nilsson, T. González, J. Mateos, P. Sangaré, G. Ducournau, C. Gaquière, L. Desplanque, X. Wallart, and J. Grahn
- Applied Physics Letters 105, 093505 [1-5] (2014)

34. Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

- J. F. Millithaler, I. Iñiguez-de-la-Torre, A. Iñiguez-de-la-Torre, T. González, P. Sangaré, G. Ducournau, C. Gaquière, and J. Mateos
- Applied Physics Letters 104, 073509 [1-4] (2014)

33. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

32. Noise Equivalent Power in Terahertz detectors based on semiconductor nanochannels

- J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González and J. Mateos
- 22nd International Conference on Noise and Fluctuations, 2013, pp. 1-4. ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578885 (2013)

31. Nonlinear nanochannels for room temperature terahertz heterodyne detection

- J. Torres, P. Nouvel, A. Penot, L. Varani, P. Sangaré, B. Grimbert, M. Faucher, G. Ducournau, C. Gaquière, I. Iñiguez-de-la-Torre, J. Mateos and T. Gonzalez
- Semiconductor Science and Technology 28, 125024 [1-6] (2013)

30. Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length

- S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- Journal of Applied Physics 114, 074503 [1-9] (2013)

29. Experimental demonstration of direct terahertz detection at room temperature in AlGaN/GaN asymmetric nanochannels

- P. Sangaré, G. Ducournau, B. Grimbert, V. Brandli, M. Faucher, C. Gaquière, A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. F. Millithaler, J. Mateos, and T. González
- Journal of Applied Physics 113, 034305 [1-6] (2013)

28. Effect of a high-k dielectric on the performance of III-V Ballistic Deflection Transistors

- V. Kaushal, I. Íñiguez-de-la-Torre, T. González, J. Mateos, B. Lee, V. Misra, and M. Margala
- IEEE Electron Device Letters 33, 1120-1122 (2012)

27. Searching for THz Gunn oscillations in GaN planar nanodiodes

- A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangaré, G. Ducournau, and C. Gaquière
- Journal of Applied Physics 11, 113705 [1-9] (2012)

26. Monte Carlo studies of the intrinsic time-domain response ofnanoscale three-branch junctions

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, T. González, H. Irie, and Roman Sobolewski
- Journal of Applied Physics 111, 084511 [1-4] and Virtual Journal of Nanoscale Science & Technology 25 [20] (2012)

25. Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

- I. Íñiguez-de-la-Torre, T. González, H. Rodilla, B. G. Vasallo and J. Mateos
- APPLICATIONS OF MONTE CARLO METHOD IN SCIENCE AND ENGINEERING, pp. 803-828 (2011) Edited by: S. Mark and S. Mordechai. InTech, Rijeka (Croacia) (2011)

24. Wide band gap self-switching nanodevices for THz applications at room temperature

- C. Gaquiere, G. Ducournau, P. Sangaré, B. Grimbert, M. Faucher, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, T. González and J. Mateos
- Proceedings of the 41st European Microwave Conference, 2011, pp. 1150-1152. (2011)

23. Noise and Terahertz rectification in semiconductor diodes and transistors

- J. Mateos, I. Íñiguez-de-la-Torre and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 16-21. (2011)

22. Toward THz Gunn Oscillations in Planar GaN Nanodiodes (artículo invitado)

- A. Íñiguez-de-la-Torre, J. Mateos, I. Íñiguez-de-la-Torre, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #53. (2011)

21. Exploring digital logic design using nano-devices through Monte Carlo simulations

- I. Íñiguez-de-la-Torre, S. Purohit, V. Kaushal, M. Margala, M. Gong, R. Sobolewski, D. Wolpert, P. Ampadu, T. González, and J. Mateos
- IEEE Transactions on Nanotechnology 10, 1337-1346 (2011)

20. Evidence of surface charge effects in T-branch nanojunctions using microsecond-pulse testing

- I. Íñiguez-de-la-Torre, J. Mateos, Y. Roelens, C. Gardès, S. Bollaert and T. González
- Nanotechnology 22, 445203 [1-5] (2011)

19. Correlation between low-frequency current-noise enhancement and high-frequency oscillations in GaN-based planar nanodiodes: A Monte Carlo study

- A. Iñiguez-de-la-Torre, I. Iñiguez-de-la-Torre, J. Mateos and T. González
- Applied Physics Letters 99, 062109 [1-3] and Virtual Journal of Nanoscale Science & Technology 24 [8] (2011)

18. Nonlinear electron properties of an InGaAs/InAlAs-based ballistic deflection transistor: Room temperature DC experiments and numerical simulations

- V. Kaushal, I. Iñiguez-de-la-Torre and M. Margala
- Solid-State Electronics 56, 120-129 (2011)

17. Sub-Thz frequency analysis in nano-scale devices at room temperature

- I. Iñiguez-de-la-Torre, V. Kaushal, M. Margala, T. González and J. Mateos
- Proceedings of the Device Research Conference 2010 (DRC 2010), DOI:10.1109/DRC.2010.5551864, 2010 (2010)

16. THz generation based on Gunn oscillations in GaN planar asymmetric nanodiodes

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, A. M. Song and J. Mateos
- 2010 International Conference on Indium Phosphide and Related Materials. Conference Proceedings (22nd IPRM), IEEE Catalog Number CFP10IIP-PRT, 2010, pp. 369-372 (2010)

15. Three-Terminal Junctions operating as mixers, frequency doublers and detectors. A broad-band frequency numerical and experimental study at room temperature

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Semiconductor Science and Technology 25, 125013 [1-14] (2010)

14. A study of geometry effects on the performance of ballistic deflection transistor

- V. Kaushal, I. Iñiguez-de-la-Torre, H. Irie, G. Guarino, W. R. Donaldson, P. Ampadu, R. Sobolewski and M. Margala
- IEEE Transactions on Nanotechnology 9, 723-733 (2010)

13. Enhanced Terahertz detection in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo, T. González and A. M. Song
- International Journal of Numerical Modeling 23, 301-314 (2010)

12. Noise enhanced THz rectification tuned by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 229-232 (2009)

11. Gunn oscillations in asymmetric nanodiodes based on narrow and wide band-gap semiconductors: Monte Carlo simulations

- T. González, I. Íñiguez-de-la-Torre, D. Pardo, J. Mateos, and A. M. Song
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Tu5, pp. 20-23 (2009)

10. Tunable Terahertz resonance in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D., T. González and A. M. Song
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 463-466 (2009)

9. Frequency response of T-shaped three branch junctions as mixers and detectors

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, J. Mateos, Y. Roelens and S. Bollaert
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 168-171. (2009)

8. Terahertz tuneable detection in Self-Switching Diodes based on high mobility semiconductors: InGaAs, InAs and InSb

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Journal of Physics: Conference Series 193, 012082 [1-4] (2009)

7. RF doubling and rectification in Three-Terminal Junctions: experimental characterization and Monte Carlo analysis

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens, S. Bollaert, A. Curutchet, C. Gaquiere and J. Mateos
- Journal of Physics: Conference Series 193, 012021 [1-4] (2009)

6. Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, C. Gardès, Y. Roelens , S. Bollaert and J. Mateos
- Journal of Applied Physics 105, 094504 [1-7] and Virtual Journal of Nanoscale Science & Technology 19 [20] (2009)

5. Monte Carlo analysis of noise spectra in self-switching nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 103, 024502 [1-6] and Virtual Journal of Nanoscale Science & Technology 17 [5] (2008)

4. Monte Carlo simulation of surface charge effects in T-branch nanojunctions

- T. González, I. Iñiguez-de-la-Torre, D. Pardo, J. Mateos, S. Bollaert, Y. Roelens and A. Cappy
- Physica Status Solidi (c) 5, 94-97 (2008)

3. Monte Carlo analysis of memory effects in nano-scale rectifying diodes

- I. Iñiguez-de-la-Torre, T. González, D. Pardo and J. Mateos
- Physica Status Solidi (c) 5, 82-85 (2008)

2. Microscopic analysis of noise in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 317-320 (2007)

1. Influence of the surface charge on the operation of ballistic T-branch junctions: a self-consistent model for Monte Carlo simulations

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