About

Beatriz García Vasallo received the B.S. and Ph.D. degrees in physics from the University of Salamanca, Salamanca, Spain, in 2000 and 2005, respectively. She was with the Institut d’Electronique, de Microélectronique et de Nanotechnologies (IEMN), France, for two years as a postdoc. Then, she joined as a lecturer the Department of Applied Physics of the University of Salamanca, where, since 2018, she is associate professor. Her current research interests include the modeling and characterization of high-frequency low-noise advanced III-V devices as well as the modeling of noise behavior of neuromorphic systems.

Articles Published

65. Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes

- B. Orfao, M. Abou Daher, R. A. Peña, B. G. Vasallo, S. Pérez, I. Íñiguez-de-la-Torre, G. Paz-Martínez, J. Mateos, Y. Roelens, M. Zaknoune, and T. González
- Journal of Applied Physics 135, 014501 (2024)

64. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

- S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 3447 (2023)

63. Role of impact ionization and self-consistent tunnel injection in Schottky-barrier diodes operating under strong reverse-bias conditions

- T. Gonzalez, B. Orfao, S. Pérez, J. Mateos, and B. G. Vasallo
- Applied Physics Express 16, 024003 (2023)

62. Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

- B. Orfao, G. Di Gioia, B. G. Vasallo, S. Pérez, J. Mateos, Y. Roelens, E. Frayssinet, Y. Cordier, M. Zaknoune, and T. González
- Journal of Applied Physics 132, 044502 (2022)

61. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, S. Pérez, T. González, and J. Mateos
- 2021 13th Spanish Conference on Electron Devices (CDE) DOI: 10.1109/CDE52135.2021.9455727 (2021)

60. Dielectric Passivation and Edge Effects in Planar GaN Schottky Barrier Diodes

- B. Orfao, B. G. Vasallo, S. Pérez, J. Mateos, D. Moro-Melgar, M. Zaknoune, and T. González
- IEEE Transactions on Electron Devices 68, 4296 (2021)

59. Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes

- B. Orfao, B. G. Vasallo, D. Moro-Melgar, S. Pérez, J. Mateos, and T. González
- IEEE Transactions on Electron Devices 9, 3530 (2020)

58. Interplay between channel and shot noise at the onset of spiking activity in neural membranes

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 19, 792 (2020)

57. Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning

- R. Rengel, E. Pascual, I. Íñiguez-de-la-Torre, M. J. Martín, and B. G. Vasallo
- Journal of Science Education and Technology 28, 445 (2019)

56. Ion shot noise in Hodgkin–Huxley neurons

- B. G. Vasallo, J. Mateos. and T. González
- Journal of Computational Electronics 17, 1790 (2018)

55. Impact ionization and band-to-band tunneling in InxGa1-xAs PIN ungated devices: A Monte Carlo analysis

- B. G. Vasallo, T. González, V. Talbo, Y. Lechaux, N. Wichmann, S. Bollaert, and J. Mateos
- Journal of Applied Physics 123, 034501 [1-5] (2018)

54. Stochastic model for action potential simulation including ion shot noise

- B. G. Vasallo, F. Galán-Prado, J. Mateos, T. González, S. Hedayat, V. Hoel, and A. Cappy
- Journal of Computational Electronics 16, 419-430 (2017)

53. Monte Carlo Study of 2-D Capacitance Fringing Effects in GaAs Planar Schottky Diodes

- D. Moro-Melgar, A. Maestrini, J. Treuttel, L. Gatilova, T. González, B. G. Vasallo, and J. Mateos
- IEEE Transactions on Electron Devices 63, 3900-3907 (2016)

52. Improvement of interfacial and electrical properties of Al2O3/ n‑Ga0.47In0.53As for III-V impact ionization MOSFETs

- Y. Lechaux, A. Fadjie, S. Bollaert, V. Talbo, J. Mateos, T. González, B. G. Vasallo, and N. Wichmann
- Journal of Physics: Conference Series 647, 012062 [1-4] (2015)

51. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

- V. Talbo, J. Mateos, T. González, Y. Lechaux, N. Wichmann, S. Bollaert and B. G. Vasallo
- Journal of Physics: Conference Series 647, 012056 [1-4] (2015)

50. Monte Carlo modelling of noise in advanced III-V HEMTs

- J. Mateos, H. Rodilla, B. G. Vasallo and T. González
- Journal of Computational Electronics 14, 72-86 (2015)

49. Time-domain Monte Carlo simulation of GaN planar Gunn nanodiodes in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Íñiguez-de-la-Torre, T. Gonzalez and J. Mateos
- 2014 International Workshop on Computational Electronics, IWCE, DOI: 10.1109/IWCE.2014.6865816 (2014)

48. Effect of tunnel injection through the Schottky gate on the static and noise behavior of GaInAs/AlInAs HEMTs

- D. Moro-Melgar, J. Mateos, T. González and B. G. Vasallo
- Journal of Applied Physics 116, 234502 [1-7] (2014)

47. Monte Carlo analysis of the operation of GaN planar nanodiodes as sub-THz emitters in resonant circuits

- B. G. Vasallo, J. F. Millithaler, I. Iñiguez-de-la-Torre, T. González, G. Ducournau, C. Gaquière and J. Mateos
- Semiconductor Science and Technology 29, 115032 [1-9] (2014)

46. Room temperature THz detection and emission with semiconductor nanodevices

- J. Mateos, J. F. Millithaler, I. Íñiguez‐de‐la‐Torre, A. Íñiguez‐de‐la‐Torre, B. G. Vasallo, S. Pérez, P. Sangare, G. Ducournau, C. Gaquiere, Y. Alimi, L. Zhang, A. Rezazadeh, A. M. Song, A. Westlund, J. Grahn, and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 215-218. ISBN: 978-1-4673-4666-5 (2013)

45. Time‐domain Monte Carlo simulations of resonant‐circuit operation of GaN Gunn diodes

- S. García, B. G. Vasallo, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 79-82. ISBN: 978-1-4673-4666-5 (2013)

44. Kink effect and noise performance in isolated-gate InAs/AlSb High Electron Mobility Transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Semiconductor Science and Technology 27, 065018 [1-5] (2012)

43. Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

- I. Íñiguez-de-la-Torre, T. González, H. Rodilla, B. G. Vasallo and J. Mateos
- APPLICATIONS OF MONTE CARLO METHOD IN SCIENCE AND ENGINEERING, pp. 803-828 (2011) Edited by: S. Mark and S. Mordechai. InTech, Rijeka (Croacia) (2011)

42. Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

- H. Rodilla, B. G. Vasallo, J. Mateos, G. Moschetti, J. Grahn, and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 188-191 (2011)

41. Monte Carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, E. Lefebvre, G. Moschetti, J. Grahn, and J. Mateos
- Acta Physica Polonica A 119, 222-224 (2011)

40. Monte Carlo analysis of the dynamic behavior of InAlAs/InGaAs velocity modulation transistors: a geometrical optimization

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Acta Physica Polonica A 119, 193-195 (2011)

39. Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors

- B. G. Vasallo, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- Journal of Applied Physics 108, 094505 [1-5] (2010)

38. Monte Carlo study of the static and dynamic performance of a 100 nm-gate InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 57, 2572-2578 (2010)

37. Modelling of hig-frequency noise in III-V double-gate HFETs (artículo invitado)

- B. G. Vasallo
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 299-304 (2009)

36. Monte Carlo study of an InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 128-131. (2009)

35. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

- N. Wichmann, B. G. Vasallo, S. Boolaert, Y. Roelens, X. Wallart, A. Cappy, T. González, D. Pardo and J. Mateos
- Applied Physics Letters 94, 103504 [1-3] (2009)

34. Monte Carlo comparison of the noise performance of InAlAs/InGaAs double-gate and standard HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- Proceedings of the 2008 International Conference on Indium Phosphide and Related Materials (IPRM 08), IEEE Catalog CFP08IIP-CDR, 2008, p89 (2008)

33. Comparison between the noise performance of double- and single-gate InP-based HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, Y. Roelens, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 55, 1535-1540 (2008)

32. Noise behavior of InP-based double-gate and standard HEMTs: a comparison

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 167-170 (2007)

31. Three-terminal ballistic junctions with Schottky gates

- C. Gardès, Y. Roelens, S. Bollaert, A. Cappy, X. Wallart, J. Mateos, T. González and B. G. Vasallo
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 153-156 (2007)

30. Monte Carlo comparison between InAlAs/InGaAs double gate and standard HEMTs

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 80-83 (2007)

29. Comparison between the dynamic performance of double- and single-gate AlInAs/InGaAs HEMTs

- B. G. Vasallo, N. Wichmann, S. Bollaert, A. Cappy, T. González, D. Pardo and J. Mateos
- IEEE Transactions on Electron Devices 54, 2815-2822 (2007)

28. Ballistic nanodevices. A new concept in electronic design

- Y. Roelens, J. Mateos, S. Bollaert, J. S. Galloo, B. G. Vasallo, D. Pardo and T. González
- Revue E tijdschrift 123, 34-39 (2007)

27. Ballistic nanodevices for high frequency applications

- S. Bollaert, A. Cappy, Y. Roelens, J. S. Galloo, C. Gardes, Z. Teukam, X. Wallart, J. Mateos, T. González, B. G. Vasallo, B. Hackens, L. Bednarz and I. Huynen
- Thin Solid Films 515, 4321-4326 (2007)

26. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics 110, 2006, pp. 109-113 (2006)

25. Transport and noise in ultrafast unipolar nanodiodes and nanotransistors

- T. González, A. M. Song, B. G. Vasallo, D. Pardo and J. Mateos
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)

24. THz operation of self-switching nanodiodes and nanotransistors

- J. Mateos, A. M. Song, B. G. Vasallo, D. Pardo and T. González
- Nanotechnology II. Proc. of SPIE 5838, 2005, pp. 145-153 (2005)

23. Influence of kink effect on the dynamic and noise performance of short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-024(1-4) (2005)

22. A simple approach for the fabrication of ultrafast unipolar diodes

- J. Mateos, A. M. Song, B. G. Vasallo, D. Pardo and T. González
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-018(1-4) (2005)

21. Influence of the kink effect on the dynamic performance of short-channel InAlAs/InGaAs high electron mobility transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Semiconductor Science and Technology 20, 956-960 (2005)

20. Operation and high-frequency performance of nanoscale unipolar rectifying diodes

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- Applied Physics Letters 86, 212103 [1-3] (2005)

19. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)

18. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)

17. Kink-effect related noise in short-channel InAlAs/InGaAs High Electron Mobility Transistors

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 95, 8271-8274 (2004)

16. Non-linear effects in T-branch junctions

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, E. Pichonat, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- IEEE Electron Device Letters 25, 235-237 (2004)

15. Monte Carlo analysis of four-terminal ballistic rectifiers

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Nanotechnology 15, S250-S253 (2004)

14. Room temperature nonlinear transport in ballistic nanodevices

- T. Gonzalez, B. G. Vasallo, D. Pardo and J. Mateos
- Semiconductor Science and Technology 19, S125-S127 (2004)

13. Monte Carlo simulation of ballistic nanodevices for THz applications

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- Proceedings of 14th Workshop on Modelling and Simulation of Electron Devices, Serv. Publ. UAB, 2003, pp. 109-112 (2003)

12. Noise associated with the kink effect in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 357-360. (2003)

11. Kink-effect-related noise in InAlAs/InGaAs short-channel HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 415-423 (2003)

10. Room temperature nonlinear transport in InGaAs/AlInAs ballistic nanodevices

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, H. Boutry, B. Hackens, V. Bayot, L. Bednarz, P. Simon, I. Huynen, J.S. Galloo, Y. Roelens, X. Wallart, S. Bollaert and A. Cappy
- Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 03CH37413, 2003, pp. 484-487. (2003)

9. Monte Carlo analysis of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- Proceedings of the 2003 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 03CH37413, 2003, pp. 106-109. (2003)

8. Monte Carlo simulation of noise in electronic devices: limitations and perspectives (artículo invitado)

- T. González, J. Mateos, M. J. Martín-Martínez, S. Pérez, R. Rengel, B. G. Vasallo and D. Pardo
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 496-503. (2003)

7. Microscopic investigation of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, VII-07(1-4) (2003)

6. Ballistic nanodevices for THz Data Processing. Monte Carlo simulations

- J. Mateos, B. G. Vasallo, D. Pardo and T. González
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, II-05(1-4) (2003)

5. Monte Carlo study of kink effect in short-channel InAlAs/InGaAs HEMTs

- B. G. Vasallo, J. Mateos, D. Pardo and T. González
- Journal of Applied Physics 94, 4096-4101 (2003)

4. Microscopic modelling of nonlinear transport in ballistic nanodevices

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, S. Bollaert, Y. Roelens and A. Cappy
- IEEE Transactions on Electron Devices 50, 1897-1905 (2003)

3. Ballistic nanodevices for THz data processing: Monte Carlo simulations

- J. Mateos, B. G. Vasallo, D. Pardo, T. González, J. S. Galloo, Y. Roelens, S. Bollaert, and A. Cappy
- Nanotechnology 14, 117-122 (2003)

2. Influence of density, occupancy and location of electron traps on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Fluctuation and Noise Letters 2, 243-251 (2002)

1. Influence of trapping-detrapping processes on shot noise in nondegenerate quasiballistic transport

- B. G. Vasallo, J. Mateos, D. Pardo, and T. González
- Semiconductor Science and Technology 17, 440-445 (2002)