Héctor Sánchez Martín

Margarita Salas Contracted Researcher

Héctor Sánchez Martín

Margarita Salas Contracted Researcher
hectorsanchezmartin@usal.es
+34 666 666 666


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Descripción de prueba

Articles Published


17. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, P. Artillan, H. Sánchez-Martín, S. García-Sánchez, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques (2023)

16. Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes

- I. Íñiguez-de-la-Torre, E. Pérez-Martín, P. Artillan, E. Rochefeuille, H. Sánchez-Martín, G. Paz-Martínez, T. González, and J. Mateos
- Applied Physics Letters 123, 123503 (2023)

15. Low temperature memory effects in AlGaN/GaN nanochannels

- H. Sánchez-Martín, E. Pérez-Martín, G. Paz-Martínez, J. Mateos, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 123, 103505 (2023)

14. Trap-assisted enhancement of the responsivity in asymmetric planar GaN-based nanodiodes at low temperature

- E. Pérez-Martín, H. Sánchez-Martín, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 34, 325201 (2023)

13. Zn/P ratio and microstructure defines carrier density and electrical transport mechanism in earth-abundant Zn3-xP2+y thin films

- R. Paul, V. Conti, M. Zamani, S. Escobar-Steinvall, H. Sánchez-Martín, C. Gastaldi, M. A. Ionescu, I. Íñiguez-de-la-Torre, M. Dimitrievska, A. Fontcuberta, and V. Piazza
- Solar Energy Materials and Solar Cells 252, 112194 (2023)

12. Analysis of GaN-based HEMTs operating as RF detectors over a wide temperature range

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques 71, 3126 (2023)

11. Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors

- G. Paz-Martínez, I. Íñiguez-De-La-Torre, H. Sánchez-Martín, B. García-Vasallo, N. Wichmann, T. González, and J. Mateos
- Journal of Applied Physics 132, 134501 (2022)

10. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

- H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
- Solid-State Electronics 193, 108289 (2022)

9. Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, H. Sánchez-Martín, J. A. Novoa-López, V. Hoel, Y. Cordier, J. Mateos and T. González
- Sensors 22, 1515 (2022)

8. Temperature behavior of Gunn oscillations in planar InGaAs diodes

- J. A. Novoa-López, G. Paz-Martínez, H. Sánchez-Martín, Y. Lechaux, I. Íñiguez-de-la-Torre, T. González, and J. Mateos
- IEEE Electron Device Letters 42, 1136 (2021)

7. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

- E. Pérez-Martín, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, T. González, J. Mateos, and I. Iñiguez-de-la-Torre
- Microelectronics Reliability 114, 113806 (2020)

6. Comprehensive characterization of Gunn oscillations in In0.53Ga0.47As planar diodes

- Y. Lechaux, I. Íñiguez-de-la-Torre, J. A. Novoa-López, O. García-Pérez, H. Sánchez-Martín, J. F. Millithaler, D. Vaquero, J. A. Delgado-Notario, V. Clericò, T. González and J. Mateos
- Smiconductor Science and Technology 35, 115009 (2020)

5. Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

- E. Pérez-Martín, T. González, D. Vaquero, H. Sánchez-Martín, C. Gaquière, V. J. Raposo, J. Mateos and I. Íñiguez-de-la-Torre
- Nanotechnology 31, 405204 (2020)

4. GaN nanodiode arrays with improved design for zero-bias sub-THz detection

- H. Sánchez-Martín, S. Sánchez-Martín, I. Íñiguez-de-la-Torre , S. Pérez, J. A. Novoa , G. Ducournau, B. Grimbert, C. Gaquière, T. González and J. Mateos
- Semiconductor Science and Technology 33, 095016 (2018)

3. Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

- H. Sánchez-Martín, J. Mateos, J. A. Novoa, J. A. Delgado-Notario, Y. M. Meziani, S. Pérez, H. Theveneau, G. Ducournau, C. Gaquière, T. González, and I. Íñiguez-de-la-Torre
- Applied Physics Letters 113, 043504 (2018)

2. Anomalous DC and RF behavior of virgin AlGaN/AlN/GaN HEMTs

- H. Sánchez-Martín, Ó. García-Pérez, S. Pérez, P. Altuntas, V. Hoel, S. Rennesson, Y. Cordier, T. González, J. Mateos and I. Íñiguez-de-la-Torre
- Semiconductor Science and Technology 32, 035011 [1-8] (2017)

1. Shot-noise suppression effects in InGaAs planar diodes at room temperature

- Ó. García-Pérez, H. Sánchez-Martín, J. Mateos, S. Pérez, A. Westlund, J. Grahn, and T. González
- Journal of Physics: Conference Series 647, 012061 [1-4] (2015)