NANELEC

CONFERENCE PROCEEDINGS

All 2021 2015 2014 2013 2012 Journals Tesis

Conference Proceedings published on 2011.

13. Monte Carlo Simulation of Room Temperature Ballistic Nanodevices

- I. Íñiguez-de-la-Torre, T. González, H. Rodilla, B. G. Vasallo and J. Mateos
- APPLICATIONS OF MONTE CARLO METHOD IN SCIENCE AND ENGINEERING, pp. 803-828 (2011) Edited by: S. Mark and S. Mordechai. InTech, Rijeka (Croacia) (2011)

12. Monte Carlo simulations of electronic noise in semiconductor materials and devices

- T. González, J. Mateos, S. Pérez and D. Pardo
- All the Colours of Noise. Essays in honor of Lino Reggiani, 2011, pp. 27-42. (2011)

11. Wide band gap self-switching nanodevices for THz applications at room temperature

- C. Gaquiere, G. Ducournau, P. Sangaré, B. Grimbert, M. Faucher, I. Íñiguez-de-la-Torre, A. Íñiguez-de-la-Torre, T. González and J. Mateos
- Proceedings of the 41st European Microwave Conference, 2011, pp. 1150-1152. (2011)

10. Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

- H. Rodilla, B. G. Vasallo, J. Mateos, G. Moschetti, J. Grahn, and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 188-191 (2011)

9. Comparison of noise characteristics of GaAs and GaN Schottky diodes for millimeter and submillimeter applications

- D. Pardo, S. Pérez, J. Grajal, J. Mateos and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 110-113 (2011)

8. Noise and Terahertz rectification in semiconductor diodes and transistors

- J. Mateos, I. Íñiguez-de-la-Torre and T. González
- Proceedings of the 21st International Conference on Noise and Fluctuations, IEEE Catalog Number CFP1192N-CDR, 2011, pp. 16-21. (2011)

7. Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs

- M. J. Martin, R. Rengel, J. M. Galeote, M. de Souza, and M. A. Pavanello
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #134 (2011)

6. A Monte Carlo model for the study of n-type strained Silicon Schottky Diodes

- J. M. Galeote, R. Rengel, E. Pascual, and M. J. Martín
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #121 (2011)

5. Static and large signal noise analysis in GaAs and GaN Schottky diodes for high frequency applications

- D. Pardo, J. Grajal de la Fuente, S. Pérez, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #95. (2011)

4. Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

- B. García, H. Rodilla, T. González, G. Moschetti, J. Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #93. (2011)

3. Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

- H. Rodilla, T. González, G. Moschetti, J.n Grahn, and J. Mateos
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #78. (2011)

2. OPTTR induced current oscillations in GaN diodes Monte Carlo simulations

- A. Íñiguez-de-la-Torre, J. Mateos, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #77 (2011)

1. Toward THz Gunn Oscillations in Planar GaN Nanodiodes (artículo invitado)

- A. Íñiguez-de-la-Torre, J. Mateos, I. Íñiguez-de-la-Torre, and T. González
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #53. (2011)


.