CONFERENCE PROCEEDINGS


Conference Proceedings published on 2009.


15. Monte Carlo analysis of noise spectra in InAs channels from diffusive to ballistic regime

- G. Sabatini, H. Marinchio, L. Varani, C. Palermo, J. F. Millithaler, L. Reggiani, H. Rodilla, T. Gonzàlez, S. Pérez and J. Mateos
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 345-348 (2009)

14. Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis

- E. Pascual, R. Rengel and M. J. Martín
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 329-332 (2009)

13. Modelling of hig-frequency noise in III-V double-gate HFETs (artículo invitado)

- B. G. Vasallo
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 299-304 (2009)

12. High frequency noise in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 237-240 (2009)

11. Noise enhanced THz rectification tuned by geometry in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, H. Rodilla, J. Mateos, D. Pardo, A. M. Song and T. González
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 229-232 (2009)

10. Monte Carlo Simulation of GaN HEMTs: Influence of GaN p-type Doping and High Temperature of Operation

- J. Mateos, S. Pérez, R. Cuerdo, E. Muñoz , F. Calle and T. González
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Wed3, pp. 26-29 (2009)

9. Gunn oscillations in asymmetric nanodiodes based on narrow and wide band-gap semiconductors: Monte Carlo simulations

- T. González, I. Íñiguez-de-la-Torre, D. Pardo, J. Mateos, and A. M. Song
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Tu5, pp. 20-23 (2009)

8. Monte Carlo simulation of InAs/AlSb HEMTs

- H. Rodilla, J. Mateos, T. González, M. Malmkvist, Eric Lefebvre and J. Grahn
- WOCSDICE 2009, 33rd Workshop on Compound Semiconductor Devices and Integrated Circuits, 2009, Mon7, pp. 10-13 (2009)

7. Tunable Terahertz resonance in planar asymmetric nanodiodes

- I. Iñiguez-de-la-Torre, J. Mateos, D., T. González and A. M. Song
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 463-466 (2009)

6. Monte Carlo analysis of thermal effects in GaN HEMTs

- J. Mateos, S. Pérez, D. Pardo and T. González
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 459-462 (2009)

5. Frequency response of T-shaped three branch junctions as mixers and detectors

- I. Iñiguez-de-la-Torre, T. González, D. Pardo, J. Mateos, Y. Roelens and S. Bollaert
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 168-171. (2009)

4. Monte Carlo simulation of Sb-based heterostructures

- H. Rodilla, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 152-155. (2009)

3. Monte Carlo study of an InAlAs/InGaAs velocity modulation transistor

- B. G. Vasallo, T. González, D. Pardo and J. Mateos
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 128-131. (2009)

2. Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study

- E. Pascual, R. Rengel and M. J. Martín
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 108-111. (2009)

1. Comparative study of laterally asymmetric channel and conventional MOSFETs

- R. Rengel, M. J. Martín and F. Danneville
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 96-99. (2009)


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