NANELEC

CONFERENCE PROCEEDINGS

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Conference Proceedings published on 2007.

14. Kinetic and partial-differential equation modeling of noise in Schottky barrier diodes: a comparison

- F. L.Traversa, F. Bertazzi, F. Bonani, G. Ghione, S.Pérez, J. Mateos, T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 321-324 (2007)

13. Microscopic analysis of noise in self-switching diodes

- I. Iñiguez-de-la-Torre, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 317-320 (2007)

12. Noise anaysis of plasma wave oscillations in InGaAs channels

- J. Pousset, J. F. Millithaler, C. Palermo, G. Sabatini, H. Marinchio, L. Varani, J. Mateos, T. González, S. Pérez, D. Pardo, E. Starikov, P. Shiktorov, V. Gruzhinskis and L. Reggiani
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 201-204 (2007)

11. Monte Carlo investigation of THz oscillations in InAlAs/InGaAs heterostructures by means of current and voltage noise spectra

- S. Pérez, J. Mateos, D. Pardo and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 197-200 (2007)

10. Noise behavior of InP-based double-gate and standard HEMTs: a comparison

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 167-170 (2007)

9. RF noise and scaling in nanometer SOI MOSFETs: influence of quasiballistic transport

- M. J. Martín, R. Rengel, E. Pascual and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 99-102 (2007)

8. Monte Carlo simulation of GaN HEMT degradation mechanisms

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 233-236 (2007)

7. Three-terminal ballistic junctions with Schottky gates

- C. Gardès, Y. Roelens, S. Bollaert, A. Cappy, X. Wallart, J. Mateos, T. González and B. G. Vasallo
- WOCSDICE 2007, 31st Workshop on Compound Semiconductor Devices and Integrated Circuits, University of Padova, 2007, pp. 153-156 (2007)

6. Monte Carlo analysis of quantum tunnelling and thermionic transport in a reverse biased Schottky diode

- E. Pascual, R. Rengel y M. J. Martín
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 108-111 (2007)

5. Monte Carlo analysis of carrier transport from diffusive to ballistic regime in nanometer SOI MOSFETs

- M. J. Martín, R. Rengel, E. Pascual and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 340-343 (2007)

4. InAlAs/InGaAs heterostructures for THz generation

- S. Pérez, J. Mateos, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 127-130 (2007)

3. Monte Carlo simulation of AlGaN/GaN heterostructures

- J. Mateos, S. Pérez, I. Íñiguez de la Torre, D. Pardo and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 84-87 (2007)

2. Monte Carlo comparison between InAlAs/InGaAs double gate and standard HEMTs

- B. G. Vasallo, T. González, D. Pardo, J. Mateos, N. Wichmann, S. Bollaert and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 80-83 (2007)

1. Surface charge effects in ballistic T-branch nanojunctions

- I. Íñiguez de la Torre, J. Mateos, T. González, D. Pardo, S. Bollaert, Y. Roelens and A. Cappy
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 48-51 (2007)


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