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CONFERENCE PROCEEDINGS

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Conference Proceedings published on 2004.

10. Ballistic devices based on T-branch junctions and Y-branch junctions on GaInAs/AlInAs heterostructure

- J. S. Galloo, Y. Roelens, S. Bollaert, Pichonat E, X. Wallart, A. Cappy, J Mateos, and T. González
- Proceedings of the 34th European Microwave Conference (EuMC 2004 - GAAS2004), European Microwave Association, 2004, pp. 219‑222. (2004)

9. Ballistic GaInAs/AlInAs devices technology and characterisation at room temperature

- J. S. Galloo, Y. Roelens, S. Bollaert, Pichonat E, X. Wallart, A. Cappy, J Mateos, and T. González
- Proceedings of the IEEE Nano 2004 Conference, IEEE Catalog (CD): 04TH8757C, 2004, 3p. (2004)

8. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381 (2004)

7. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)

6. Influence of 2D electrostatic effects on the high-frequency noise behaviour of sub-100 nm scaled MOSFETs

- R. Rengel, D. Pardo, and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 96-106 (2004)

5. Monte Carlo particle-based simulation of DG MOSFETs: influence of space-quantization effects on the high-frequency noise

- R. Rengel, T. González and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 519-528. (2004)

4. Noise in Shottky-barrier diodes: from static to large-signal operation

- P. Shiktorov, S. Pérez, T. González, E. Starikov, V. Gruzinskis, L. Reggiani, L. Varani and J. C. Vaissiere
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 322-336. (2004)

3. Nonlocal effects and transfer fields for electronic noise in small devices

- L. Varani, J. C. Vaissiere, P. Shiktorov, E. Starikov, V. Gruzinskis, T. González, J. Mateos, D. Pardo and L. Reggiani
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 1-15. (2004)

2. Transition from ballistic to ohmic transport in T-branch junctions at room temperature in GaInAs/AlInAs heterostructures

- J. S.Galloo, E. Pichonat, Y. Roelens, S. Bollaert, X. Wallart, J. Mateos, T. Gonzalez, H. Boutry, B. Hackens, L. Bendnarz, and I. Huynen
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 378-381. (2004)

1. Operation of a novel nanoscale unipolar rectifying diode

- J. Mateos, B. G. Vasallo, D. Pardo, T. González and A. M. Song
- Proceedings of the 2004 International Conference on Indium Phosphide and Related Materials, IEEE Catalog 04CH37589, 2004, pp. 249-252. (2004)


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