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CONFERENCE PROCEEDINGS

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Conference Proceedings published on 2001.

13. Fabrication of a 0.12 µm gate In0.52Al0.48As/In0.53Ga0.47As HEMT on transferred substrate

- S. Bollaert, X. Wallart, S. Lepilliet, A. Cappy, E. Jalaguier, S. Pocas, B. Aspar and J. Mateos
- GAAS 2001 Proceedings, Microwave Engineering Europe, 2001, pp. 171-173 (2001)

12. Design and realization of sub 100nm gate length HEMTs

- T. Parenty, S. Bollaert, J. Mateos and A. Cappy
- IEEE International Conference on Indium Phosphide and Related Materials, 2001, pp. 626-629. (2001)

11. Noise optimization of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, S. Bollaert, T. Parenty, and A. Cappy
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 245-248. (2001)

10. Microscopic analysis of microwave noise sources in SiGe HBT’s

- M.J. Martín, J. Mateos, D. Pardo, and T. González
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 217-220. (2001)

9. Monte Carlo simulations of mesoscopic shot noise (artículo invitado)

- T. González
- Proceedings of the 16th International Conference on Noise in Physical Systems and 1/f fluctuations, World Scientific, 2001, pp. 431-436. (2001)

8. Microscopic analysis of generation-recombination noise upconversion in semiconductors

- S. Pérez, T. González, S. L. Delage, and J. Obregon
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 265-268 (2001)

7. Influence of high-injection conditions on the noise behavior in Si BJTs and SiGe HBTs at RF frequencies

- M. J. Martín, T. González, and D. Pardo
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 145-148. (2001)

6. Design optimisation of ultra-short gate HEMTs using Monte Carlo simulation

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- Actas de la 3ª Conferencia de Dispositivos Electrónicos, 2001, pp. 85-88. (2001)

5. Monte Carlo analysis of a 0.3 µm gate length MOSFET

- R. Rengel, M. J. Martín y D. Pardo
- Actas de la 3ª Conferencia De Dispositivos Electrónicos, 2001, pp.21-24 (2001)

4. Comparative analysis of current fluctuations in Si BJT’s and SiGe HBT’s

- M. J. Martín-Martínez T. González, and D. Pardo
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1761-1762. (2001)

3. Design optimization of low-noise HEMTs

- J. Mateos, T. González, D. Pardo, V. Hoel, S. Bollaert, and A. Cappy
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1777-1778. (2001)

2. When macroscopic semiconductors display shot noise

- G. Gomila, L. Reggiani, and T. González
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1351-1352. (2001)

1. Fermi and Coulomb suppression of shot noise suppression in ballistic diodes

- T. González, J. Mateos, D. Pardo and L. Reggiani
- Proceedings of the 25th International Conference on the Physics of Semiconductors, Springer Verlag, 2001, pp. 1343-1344. (2001)


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