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Articles Published

14. High-Frequency Microwave Detection With GaN HEMTs in the Subthreshold Regime

- G. Paz-Martínez, I. Íñiguez-de-la-Torre, P. Artillan, H. Sánchez-Martín, S. García-Sánchez, T. González, and J. Mateos
- IEEE Transactions on Microwave Theory and Techniques (2023)

13. On the Practical Limitations for the Generation of Gunn Oscillations in Highly Doped GaN Diodes

- S. García-Sánchez, M. Abou Daher, M. Lesecq, L. Huo, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, I. Íñiguez-de-la-Torre, B. G. Vasallo, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 3447 (2023)

12. A Deep Learning-Monte Carlo Combined Prediction of Side-Effect Impact Ionization in Highly Doped GaN Diodes

- S. García-Sánchez, R. Rengel, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 2981 (2023)

11. Monte Carlo analysis of thermal effects in the DC and AC performance of AlGaN/GaN HEMTs

- H. Sánchez-Martín, I. Íñiguez-de-la-Torre, S. García-Sánchez, J. Mateos, and T. González
- Solid-State Electronics 193, 108289 (2022)

10. Optimization of the Epilayer Design for the Fabrication of Doped GaN Planar Gunn Diodes

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 69, 514 (2022)

9. Non-linear thermal resistance model for the simulation of high power GaN-based devices

- S. García-Sánchez, I. Íñiguez-de-la-Torre, S. Pérez, K. Ranjan, M. Agrawal, R. Lingaparthi, D. Nethaji, K. Radhakrishnan, S. Arulkumaran, G. I. Ng, T. González, and J. Mateos
- Semiconductor Science and Technology 36, 055002 (2021)

8. Impact of substrate and thermal boundary resistance on the performance of AlGaN/ GaN HEMTs analyzed by means of electrothermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, J. Mateos, T. González and S. Pérez
- Semiconductor Science and Technology 31, 065005 [1-9] (2016)

7. Evaluation of the thermal resistance in GaN-diodes by means of electro-thermal Monte Carlo simulations

- S. García, I. Íñiguez-de-la-Torre, Ó. García-Pérez, J. Mateos, T. González and S. Pérez
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087474 (2015)

6. Temperature and surface traps influence on the THz emission from InGaAs diodes

- A. Rodríguez, I. Íñiguez-de-la-Torre, Ó. García-Pérez, S. García, A. Westlund, P-Å. Nilsson, J. Grahn T. González, J. Mateos, and S. Pérez,
- Journal of Physics: Conference Series 647, 012039 [1-4] (2015)

5. Self-consistent electro-thermal simulations of AlGaN/GaN diodes by means of Monte Carlo method

- S. García, I. Íñiguez-de-la-Torre, O. García-Pérez, J. Mateos, T. González, P. Sangaré, C. Gaquière and S. Pérez
- Semiconductor Science and Technology 30, 035001 [1-8] (2015)

4. Comparative Monte Carlo analysis of InP- and GaN-based Gunn diodes

- S. García, S. Pérez, I. Íñiguez-de-la-Torre, J. Mateos, and T. González
- Journal of Applied Physics 115, 044510 [1-7] (2014)

3. Time‐domain Monte Carlo simulations of resonant‐circuit operation of GaN Gunn diodes

- S. García, B. G. Vasallo, J. Mateos and T. González
- 2013 Spanish Conference on Electron Devices, IEEE Catalog CFP13589, 2013, pp. 79-82. ISBN: 978-1-4673-4666-5 (2013)

2. Space quantization effects in Double Gate SB-MOSFETs: role of the active layer thickness

- J. S. García, M. J. Martín and R. Rengel
- 2013 Spanish Conference on Electron Devices, 2013, pp. 59-62 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481342 (2013)

1. Numerical study of sub-millimiter Gunn oscillations in InP and GaN vertical diodes: dependence on bias, doping and length

- S. García, I. Íñiguez-de-la-Torre, S. Pérez, J. Mateos, and T. González
- Journal of Applied Physics 114, 074503 [1-9] (2013)