Full Professor
raulr@usal.es
+34 666 666 666
http://diarium.usal.es/raulr/
Researcher ID: G-4425-2015
Descripción de prueba
- S. García-Sánchez, R. Rengel, S. Pérez, T. González, and J. Mateos
- IEEE Transactions on Electron Devices 70. 2981 (2023)
- J. M. Iglesias, A. Nardone, R. Rengel, K. Kalna, M. J. Martín, and E. Pascual
- 2D Materials 14, 025011 (2023)
69. High-order harmonic generation in 2D transition metal disulphides
- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Applied Physics Letters 119, 012101 (2021)
68. Harmonic Extraction in Graphene: Monte Carlo Analysis of the Substrate Influence
- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Materials 14, 5108 (2021)
- R. Rengel, O. Castelló, E. Pascual, M. J. Martín, and J. M. Iglesias
- Journal of Physics D: Applied Physics 59, 395102 (2020)
66. Relevance of collinear processes to the ultrafast dynamics of photoexcited carriers in graphene
- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Physica E: Low-dimensional Systems and Nanostructures 123, 114211 (2020)
65. Electronic transport and noise characterization in MoS2
- E. Pascual, J. M. Iglesias, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 35, 055021 (2020)
64. Experiences on the Design, Creation, and Analysis of Multimedia Content to Promote Active Learning
- R. Rengel, E. Pascual, I. Íñiguez-de-la-Torre, M. J. Martín, and B. G. Vasallo
- Journal of Science Education and Technology 28, 445 (2019)
63. Interband scattering-induced ambipolar transport in graphene
- J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Semiconductor Science and Technology 34, 065011 (2019)
- P. C. Feijoo, F. Pasadas, J. M. Iglesias, R. Rengel, and David Jiménez
- IEEE Transactions on Electron Devices 66, 1567 (2019)
61. Monte Carlo investigation of noise and high-order harmonic extraction in graphene
- J. M. Iglesias, E. M. Hamham, E. Pascual, and R. Rengel
- Semiconductor Science and Technology 33, 124012 (2018)
60. Impact of the hot phonon effect on electronic transport in monolayer silicene
- E. M. Hamham, J. M. Iglesias, E. Pascual, M. J. Martín, and R. Rengel
- Journal of Physics D: Applied Physics 51, 415102 (2018)
59. Damping of acoustic flexural phonons in silicene: influence on high-field electronic transport
- R. Rengel, J. M. Iglesias, E. M. Hamham, and M. J. Martín
- Semiconductor Science and Technology 33, 065011 (2018)
58. Substrate influence on the early relaxation stages of photoexcited carriers in monolayer graphene
- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Surface Science 424, 52-57 (2017)
- J. M. Iglesias, R. Rengel, Hamham E. M., E. Pascual and M. J. Martín
- Journal of Physics D: Applied Physics 50, 305101 (2017)
- P. C. Feijoo, F. Pasadas, J. M. Iglesias, M. J. Martín, R. Rengel, C. Li, W. Kim, J. Riikonen, H. Lipsanen and D. Jiménez
- Nanotechnology 28, 485203 (2017)
55. A balance equations approach for the study of the dynamic response and electronic noise in graphene
- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Applied Physics 121, 185705 (2017)
54. Noise temperature in graphene at high frequencies
- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Semiconductor Science and Technology 31, 075001 [1-6] (2016)
53. Spectral density of velocity fluctuations under switching field conditions in graphene
- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Statistical Mechanics: Theory and Experiment 2016, 054018 [1 8] (2016)
- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Applied Physics Letters 108, 043105 (2016)
51. Influence of systematic gate alignment variations on static characteristics in DG-SB-MOSFETs
- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087481 (2015)
50. Monte Carlo modeling of mobility and microscopic charge transport in supported graphene
- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- 2015 10th Spanish Conference on Electron Devices DOI: 10.1109/CDE.2015.7087445 (2015)
49. Effect of charged impurity scattering on the electron diffusivity and mobility in graphene
- R. Rengel, J. M. Iglesias, E. Pascual and M. J. Martín
- Journal of Physics: Conference Series 647, 012046 [1-4] (2015)
- J. M. Iglesias, M. J. Martín, E. Pascual and R. Rengel
- Journal of Physics: Conference Series 647, 012003 (2015)
- M. J. Martín, C. Couso, E. Pascual and R. Rengel
- IEEE Transactions on Electron Devices 99, 3955 (2014)
- R. Rengel, E. Pascual and M. J. Martín
- Applied Physics Letters 104, 233107 (2014)
- R. Rengel and M. J. Martín
- International Journal of Numerical Modelling 27, 792 (2014)
44. Schottky Barrier MOSFETs working in the linear regime: A Monte Carlo study of microscopic transport
- C. Couso, R. Rengel and M. J.Martín
- 2013 Spanish Conference on Electron Devices, 2013, pp. 63-66 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481343 (2013)
43. Space quantization effects in Double Gate SB-MOSFETs: role of the active layer thickness
- J. S. García, M. J. Martín and R. Rengel
- 2013 Spanish Conference on Electron Devices, 2013, pp. 59-62 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481342 (2013)
42. A Monte Carlo Study of Electron Transport in Suspended Monolayer Graphene
- R. Rengel, C. Couso and M. J. Martín
- 2013 Spanish Conference on Electron Devices, 2013, pp. 175-178 ISBN: 978-1-4673-4666-5, DOI: 10.1109/CDE.2013.6481371 (2013)
41. Velocity and momentum fluctuations in Suspended Monolayer Graphene
- M. J. Martín, C. Couso and R. Rengel
- 22th International Conference on Noise and Fluctuations, 2013, pp. 1-4 ISBN: 978-1-4799-0668-0, DOI: 10.1109/ICNF.2013.6578933 (2013)
- R. Rengel, and M. J. Martín
- Journal of Applied Physics 114, 143702 (2013)
39. Effect of the dopant segregation layer on the static characteristics of Schottky-Barrier n-MOSFETs
- C. Couso, E. Pascual, J. M. Galeote, M. J. Martín and R. Rengel
- 8th Internacional Caribbean Conferencia on Devices, Circuits and Systems (ICCDCS 2012), 2012, pp. 1-4 ISBN: 978-1-4577-1116-9 , DOI: 10.1109/ICCDCS.2012.6188919 (2012)
38. RF dynamic and noise performance of Metallic Source/Drain SOI n-MOSFETs
- M. J. Martín, E. Pascual and R. Rengel
- Solid-State Electronics 73, 64–73 (2012)
37. Monte Carlo simulation of graded-channel fully depleted SOI nMOSFETs
- M. J. Martin, R. Rengel, J. M. Galeote, M. de Souza, and M. A. Pavanello
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #134 (2011)
36. A Monte Carlo model for the study of n-type strained Silicon Schottky Diodes
- J. M. Galeote, R. Rengel, E. Pascual, and M. J. Martín
- 2011 Spanish Conference on Electron Devices, IEEE Catalog, 2011, #121 (2011)
35. Microscopic Modeling of RF Noise in Laterally Asymmetric Channel MOSFETs
- R. Rengel, M. J. Martín and F. Danneville,
- IEEE Electron Device Letters 32, 72-74 (2011)
34. Electronic transport in Laterally Asymmetric Channel MOSFET for RF analog applications
- R. Rengel and M. J. Martín
- IEEE Transactions on Electron Devices 57, 2448-2454 (2010)
33. Intrinsic Noise Sources in a Schottky Barrier MOSFET: a Monte Carlo Analysis
- E. Pascual, R. Rengel and M. J. Martín
- Proceedings of the 20th International Conference on Noise and Fluctuations, AIP Conference Proceedings 1129, 2009, pp. 329-332 (2009)
32. Current drive in n-type Schottky Barrier MOSFETs: a Monte Carlo study
- E. Pascual, R. Rengel and M. J. Martín
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 108-111. (2009)
31. Comparative study of laterally asymmetric channel and conventional MOSFETs
- R. Rengel, M. J. Martín and F. Danneville
- 2009 Spanish Conference on Electron Devices, IEEE Catalog CFP09589, 2009, pp. 96-99. (2009)
30. Enhanced carrier injection in Schottky contacts using dopant segregation: a Monte Carlo research
- E. Pascual , M. J. Martín , R. Rengel, G. Larrieu and E. Dubois
- Semiconductor Science and Technology 24, 025022 [1-6] (2009)
- M. J. Martín, R. Rengel, E. Pascual, J. £usakowski, W. Knap and T. González
- Physica Status Solidi (c) 5, 123-126 (2008)
- E. Pascual, R. Rengel, N. Reckinger, X. Tang, V. Bayot, E. Dubois, M. J. Martín
- Physica Status Solidi (c) 5, 119-122 (2008)
27. RF noise and scaling in nanometer SOI MOSFETs: influence of quasiballistic transport
- M. J. Martín, R. Rengel, E. Pascual and T. González
- Proceedings of the 19th International Conference on Noise and Fluctuations, AIP Conference Proceedings 922, 2007, pp. 99-102 (2007)
- E. Pascual, R. Rengel y M. J. Martín
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 108-111 (2007)
- M. J. Martín, R. Rengel, E. Pascual and T. González
- 2007 Spanish Conference on Electron Devices, IEEE Catalog 07EX1644, 2007, pp. 340-343 (2007)
- J. Lusakowski, M. J. Martín, R. Rengel, T. González, R. Tauk, Y. M. Meziani, W. Knap, F. Boeuf and T. Skotnicki
- Journal of Applied Physics 101, 114511 and Virtual Journal of Nanoscale Science & Technology 15 [25] (2007)
- E. Pascual, R. Rengel and M. J. Martín
- Semiconductor Science and Technology 22, 1003-1009 (2007)
- R. Rengel, E. Pascual and M. J. Martín
- IEEE Electron Device Letters 28, 171-173 (2007)
21. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs
- R. Rengel, T. González, J. Mateos, D. Pardo, G. Dambrine, F. Danneville, J. P. Raskin and M. J. Martín
- IEEE Transactions on Electron Devices 53, 523-532 (2006)
20. A Monte Carlo investigation of the RF performance of partially-depleted SOI MOSFETs
- R. Rengel, M. J. Martín, G. Dambrine and F. Danneville
- Semiconductor Science and Technology 21, 273-278 (2006)
19. Statistical investigation of electronic transport in decananometer gatelength SOI MOSFETs
- M. J. Martín and R. Rengel
- Proceedings of the 14th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, Springer Proceedings in Physics Series (Press). (2005)
- R. Rengel, J. Mateos, T. González, D. Pardo, G. Dambrine, F. Danneville and M. J. Martín
- Proceedings of the 4th International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 800, pp.497-502 (2005)
- R. Rengel, M. J. Martín, G. Pailloncy, G. Dambrine and F. Danneville
- Proceedings of the 18th International Conference on Noise and Fluctuations, AIP Conference Proceedings 780, 2005, pp. 745-748. (2005)
- R. Rengel, M. J. Martín, G. Pailloncy, G. Dambrine, and F. Danneville
- 2005 Spanish Conference on Electron Devices, IEEE Catalog: 05EX965C, 2005, CDE05-085(1-4) (2005)
- R. Rengel, D. Pardo, and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 96-106 (2004)
- R. Rengel, T. González and M. J. Martín
- Noise in Devices and Circuits II. Proc. of SPIE 5470, 2004, pp. 519-528. (2004)
13. On the influence of space-quantization effects on the RF noise behavior of DG MOSFETs
- R. Rengel, T. González and M. J. Martín
- Fluctuation and Noise Letters 4, L561-L569 (2004)
12. Microscopic analysis of the high-frequency noise behavior of fabricated Fully-Depleted SOI MOSFETs
- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Proceedings of the 17th International Conference on Noise and Fluctuations, CNRL s.r.o. ,2003, pp. 585-588. (2003)
11. High-frequency noise in FDSOI MOSFETs: a Monte Carlo investigation
- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- Noise in Devices and Circuits. Proc. of SPIE 5113, 2003, pp. 379-386. (2003)
- R. Rengel, D. Pardo and M. J. Martín
- 2003-05 Silicon-on-Insulator Technology and Devices, The Electrochemical Society, 2003, pp. 283-286 (2003)
- T. González, J. Mateos, M. J. Martín-Martínez, S. Pérez, R. Rengel, B. G. Vasallo and D. Pardo
- Proceedings of the 3rd International Conference on Unsolved Problems of Noise, AIP Conference Proceedings 665, 2003, pp. 496-503. (2003)
8. Impact of downscaling on dynamic and noise parameters of submicron MOSFETs
- R. Rengel, D. Pardo and M. J. Martín
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, II-07(1-4) (2003)
7. Dynamic and noise behavior of short-gate FDSOI MOSFETs: numerical and experimental analysis
- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville and J. P. Raskin
- CDE 2003, 4º Conferencia de Dispositivos Electrónicos, IMB-CNM (CSIC), 2003, V-07(1-4) (2003)
- R. Rengel, J. Mateos, D. Pardo, T. González, M. J. Martín, G. Dambrine, F. Danneville, and J.-P. Raskin
- Semiconductor Science and Technology 17, 1149-1156 (2002)
5. RF noise in a short-channel n-MOSFET: a Monte Carlo study
- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Material Science Forum 384-385, 155-158 (2002)
4. Monte Carlo analysis of a 0.3 µm gate length MOSFET
- R. Rengel, M. J. Martín y D. Pardo
- Actas de la 3ª Conferencia De Dispositivos Electrónicos, 2001, pp.21-24 (2001)
- R. Rengel, J. Mateos, D. Pardo, T. González and M. J. Martín
- Semiconductor Science and Technology 16, 939-946 (2001)
- S. Barraud, P. Dollfus, S. Galdin, R. Rengel, M. J. Martín y J.E. Velázquez
- VLSI Design 13, 399-404 (2001)
- R. Rengel Estévez, J. E. Velázquez and M. J. Martín.
- Actas de la 2ª Conferencia De Dispositivos Electrónicos, 1999, pp.167-170. (1999)